CH867UPNPT

CHENMKO ENTERPRISE CO.,LTD SURFACE MOUNT PNP&NPN Muti-Chip General Purpose Transistor VOLTAGE 50 Volts APPLICATION * AF input stages and driver applicationon equipment. * Other general purpose applications. C H867UPNPT CURRENT 150 mAmperes FEATURE * Small surface mounting type. (SC-88/SOT-363) * High current gain. * Suitable for high packing density. * Low colloector-emitter saturation. * High saturation current capability. * Two internal isolated PNP and NPN transistors in one package. (1) (6) SC-88/SOT-363 1.2~1.4 0.65 0.65 2.0~2.2 CONSTRUCTION * PNP and NPN transistors in one package. (4) 0.15~0.35 (3) 1.15~1.35 MARKING * U10 0.08~0.15 0.1 Min. C1 B2 5 E2 4 0.8~1.1 0~0.1 2.15~2.45 CIRCUIT 6 TR2 TR1 1 E1 2 B1 3 C2 D imensions in millimeters SC-88/SOT-363 LIMITING VALUES of TR1( PNP Transistor ) In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL VCBO VCEO VCES VEBO IC ICM IBM Ptot Tstg Tj Tamb Note 1. Transistor mounted on an FR4 printed-circuit board. 2003-01 PARAMETER collector-base voltage collector-emitter voltage collector-base voltage emitter-base voltage collector current (DC) peak collector current peak base current total power dissipation storage temperature junction temperature operating ambient temperature CONDITIONS open emitter open base open emitter open collector − − − − − − − Tamb ≤ 25 °C; note 1 − MIN. MAX. -50 -50 -50 -6 -150 -200 -30 200 +150 150 +150 V V V V UNIT mA mA mA mW °C °C °C −55 − −55 RATING CHARACTERISTIC ( CH867UPNPT ) LIMITING VALUES of TR2( NPN Transistor ) In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL VCBO VCEO VCES VEBO IC ICM IBM Ptot Tstg Tj Tamb Note 1. Transistor mounted on an FR4 printed-circuit board. THERMAL CHARACTERISTICS SYMBOL Rth j-s PARAMETER thermal resistance from junction to ambient CONDITIONS note 1 VALUE 415 UNIT K/W PARAMETER collector-base voltage collector-emitter voltage collector-base voltage emitter-base voltage collector current (DC) peak collector current peak base current total power dissipation storage temperature junction temperature operating ambient temperature CONDITIONS open emitter open base open emitter open collector − − − − − − − T amb ≤ 25 °C; note 1 − MIN. MAX. 50 50 50 7 150 200 30 200 +150 150 +150 V V V V UNIT mA mA mA mW °C °C °C −55 − −55 Note 1. Transistor mounted on an FR4 printed-circuit board. CHARACTERISTICS of TR1( PNP Transistor ) Tamb = 25 °C unless otherwise speciÞed. SYMBOL ICBO IEBO hFE VCEsat Cc fT Note 1. Pulse test: tp ≤ 300 µs; δ ≤ 0.02. 2. hFE: Y:120~240; G:200~400 PARAMETER collector cut-off current emitter cut-off current DC current gain collector-emitter saturation voltage collector capacitance transition frequency CONDITIONS IE = 0; VCB = 50 V IC = 0; VCB = 50 V; TA = 125 OC IC = 0; VEB = - 6 V IC = -2.0 mA; VCE = -6.0V; note 1 IC = -100 mA ; IB = -10 mA IE = ie = 0; VCB = -10V ; f = 1 MHz IC = -1mA; VCE = -10V ; f = 100 MHz − − − 120 − − − MIN. − − − − -200 4.0 120 TYP. MAX. -0.1 -50 -0.1 400 -400 5.0 − mV pF MHz UNIT uA uA uA RATING CHARACTERISTIC ( CH867UPNPT ) CHARACTERISTICS of TR2 ( NPN Transistor ) Tamb = 25 °C unless otherwise speciÞed. SYMBOL ICBO IEBO hFE VCEsat Cc fT Note 1. Pulse test: tp ≤ 300 µs; δ ≤ 0.02. 2. hFE: Y:120~240; G:200~400 PARAMETER collector cut-off current emitter cut-off current DC current gain collector-emitter saturation voltage collector capacitance transition frequency CONDITIONS IE = 0; VCB = -50 V IC = 0; VCB = -50 V; TA = 125 OC IC = 0; VEB = 6 V IC = 2.0 mA; VCE = 6.0V; note 1 IC = 100 mA ; I B = 10 mA IE = ie = 0; VCB = 10V ; f = 1 MHz IC = 1 mA; VCE = 10V ; f = 100 MHz − − − 120 − − − MIN. − − − − 100 2.0 150 TYP. MAX. 0.1 50 0.1 400 300 3.5 − mV pF MHz UNIT uA uA uA RATING CHARACTERISTIC CURVES ( CH867UPNPT ) CHARACTERISTIC CURVES of Tr1 ( PNP Transistor ) VCESAT - COLLECTOR-EMI TTER VOLTAGE (V) h FE - TYPICAL PULSED CURRENT GAIN Typical Pulsed Curre nt Gain vs Collector Current 500 VCE = 5V 400 300 25° C 200 100 0 0.01 - 40° C 12 5 ° C Co llector-Emitter Saturation Voltage vs Collector Current 0. 3 0. 25 0. 2 125 ° C 0. 15 0. 1 0.0 5 0.1 25 ° C - 40 °C 1 10 I C - COLLECTOR CURRENT (mA) 10 0 β = 10 0 .1 1 10 100 I C - COLLECTOR CURRENT (mA) RATING CHARACTERISTIC CURVES ( CH867UPNPT ) VBEO N- BASE- EMITTER ON VO LTAGE (V) VBESAT - BA SE EM ITTE R VOLTA GE (V) Bas e-Em itt er Sa tur ati on Voltag e vs Co ll ect or Cur re nt 1.2 1 0.8 0.6 0.4 0.2 0 0.1 1 10 I C - C OLLEC TOR C URRE NT (m A) 10 0 - 40 Base-Emitter ON Vo ltag e vs Collector Curren t 1 0.8 0.6 0.4 V CE = 5.0 V β = 10 °C 25°C 125°C - 4 0 °C 25 °C 125°C 0.2 1 10 100 I C - COLLECTOR CURRENT (mA) 400 Coll ect or -Cuto ff Cur re nt vs Ambie nt Tem per ature I CBO - C OLLE CTOR CU RR EN T (uA) 10 0 VCB = 5 0V 10 10 0 Input and Output Capac itance vs Revers e Voltage f = 1 . 0 MH z CAPACITANCE ( pF) 1 10 Ci b Cob 0. 1 0.01 25 50 75 10 0 T A - A MBI E NT TEMP ER ATUR E ( C) 125 1 0.1 ° 1 10 V CE - COLLECTOR VOLTAGE ( V) 100 CHARACTERISTIC CURVES of Tr2 ( NPN Transistor ) 600 500 400 300 200 100 0 0. 01 0.03 25°C - 40°C 12 5°C VCES AT - COLLEC TOR EM I TTE R VOLTA GE (V) h FE - TYPICAL PULSED CURRENT G AIN Typical Pulsed Current Gain vs Collector C urrent V CE = 5. 0 V Coll ector -Em itt er Sa tur ati o n Vo ltage vs Coll ect or Current 0. 3 β = 10 0. 25 0. 2 0.15 0. 1 25°C 125 °C 0. 05 0 0.1 - 40°C 10 0 0. 1 0.03 1 3 10 30 I C - COLLECTOR CURRENT ( mA) 100 1 10 I C - C OLLEC TOR C U RRENT (m A) RATING CHARACTERISTIC CURVES ( CH867UPNPT ) VBESAT - COLLECTOR-EMI TTER VOLTAGE (V) 1 - 4 0 °C 0.8 0.6 0.4 0.2 0.1 1 10 I C - COLLECTOR CURRENT (mA) 100 25 °C 125°C β = 10 VBEO N- BASE- EMITTER ON VO LTAGE (V) Base-Emitter Saturation Voltage vs Collector Current Base-Emitter ON Vo ltag e vs Collector Curren t 1 0.8 0.6 125°C - 4 0 °C 25 °C 0.4 V CE = 5.0 V 0.2 1 10 100 I C - COLLECTOR CURRENT (mA) 400 Coll ect or -Cuto ff Cur re nt vs Ambie nt Tem per ature I CBO - C OLLE CTOR CU RR EN T (uA) 10 0 VCB = 5 0V 10 Input and Output Capac itance vs Revers e Voltage 10 0 f = 1. 0 MHz 1 CAPACITANCE ( pF) 10 Ci b Co b 0. 1 0.01 25 50 75 10 0 T A - A MBI E NT TEMP ER ATUR E ( C) 125 ° 1 0.1 1 10 V CE - COLLECTOR VOLTAGE ( V) 10 0