CHEMF22PT

CHENMKO ENTERPRISE CO.,LTD SURFACE MOUNT Power Management (Dual Transistor) Tr1:VOLTAGE 12 V olts CURRENT 0.5 Ampere DTr2:VOLTAGE 50 Volts CURRENT 50 mAmpere APPLICATION * Power management circuit C HEMF22PT FEATURE * Small surface mounting type. (SOT-563) * Power switching circuit in a single package. * Mounting cost and area can be cut in half. * Both the 2SC5585 & CHDTC114E in one package. * Built in bias resistor(R1=10kΩ, Typ. ) (1) (5) SOT-563 MARKING * FF 0.9~1.1 0.15~0.3 (3) (4) 0.50 0.50 1.5~1.7 1.1~1.3 0.5~0.6 0.09~0.18 6 R1 Tr1 1 R2 DTr2 3 4 CIRCUIT 1.5~1.7 Dimensions in millimeters SOT-563 2SC5585 LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL VCBO VCEO VEBO IC Icp PC TSTG TJ Total power dissipation Storage temperature Junction temperature PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage DC Output current CONDITIONS − − − − NOTE.1 NOTE.2 − − −55 − MIN. MAX. 15 12 6 500 1000 150 +150 150 O UNIT V V V mA mW C C O Note 1. Single pulse Pw=1ms 2. 120mW per element must not be exceeded. Each terminal mounted on a recommended land. 2004-07 CHDTC114E LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL VCC VIN IO DC Output current IC(Max.) PC TSTG Power dissipation Storage temperature Junction temperature NOTE.1 NOTE.2 PARAMETER Supply voltage Input voltage CONDITIONS − -10 − − − −55 − MIN. MAX. 50 +40 50 mA 100 150 +150 150 mW O UNIT V V C TJ Note O C 1. Characteristics of built-in transistor. 2. Each terminal mounter on a recommended land. 2SC5585 CHARACTERISTICS Tamb = 25 °C unless otherwise speciÞed. SYMBOL PARAMETER CONDITIONS IC=1mA IC=10uA IE=10uA VCB=15V VEB=6V VCE=2V,IC=10mA IC=200mA,IB=10mA VCB=10V,IE=0mA,f=1MHZ VCE=2V,IE=-10mA,f=100MHZ MIN. 12 15 6 − − 270 − − − TYP. − − − − − − 90 7.5 320 − − − 100 100 680 250 − − MAX. V V V nA nA − mV pF MHz UNIT BVCEO Collector-emitter breakdown voltage BVCBO Collector-base breakdown voltage BVEBO ICBO IEBO hFE VCE(sat) Cob fT Emitter-base breakdown voltage Collector cut-off current Emitter cut-off current DC current gain Collector-emitter saturation voltage Collector output capacitance Transition frequency Note 1.Pulse test: tp≤300uS; δ≤0.02. CHDTC114E CHARACTERISTICS Tamb = 25 °C unless otherwise speciÞed. SYMBOL VIoff) VI(on) VO(on) II IC(off) G1 R1 R2/R1 fT PARAMETER Input off voltage Input on voltage Output voltage Input current Output current DC current gain Input resistor Resistor ratio Transition frequency IE=-5mA, VCE=10.0V f=100MHz = CONDITIONS IO=100uA; VCC=5.0V IO=10mA; VO=0.3V IO=10mA; II=0.5mA VI=5V VI=0V; VCC=50V IO=5mA; VO=5.0V − − − − 30 7 0.8 − MIN. 0.5 − − 0.1 − − − 10 1.0 250 TYP. − 3.0 0.3 0.88 0.5 − 13 1.2 − MAX. V V V mA uA − KΩ − MHz UNIT Note Pulse test: tp≤300uS; δ≤0.02. RATING CHARACTERISTIC CURVES ( CHEMF22PT ) 2SC5585 Typical Electrical Characteristics Fig.1 Ground emitter propagation characteristics 1000 Fig.2 DC current gain vs. collector current 1000 Ta=125 C 25 C DC CURRENT GAIN : hFE O O COLLECTOR CURRENT : IC(mA) VCE=2V pulsed VCE=2V pulsed -40 C 100 O 100 Ta=125 C Ta=25 C 10 O O O 10 Ta=-40 C 1 1 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1 10 100 1000 BASE TO EMITTER VOLTAGE : VBE(V) COLLECTOR CURRENT : IC(mA) COLLECTOR SATURATION VOLTAGE : VCE(sat)(mV) 1000 COLLECTOR SATURATION VOLTAGE : VCE(sat)(mV) Fig.3 Collector-emitter saturation voltage vs. collector current ( I ) Ta=25 C pulsed O Fig.4 Collector-emitter saturation voltage vs. collector current ( II ) 1000 IC/IB=20 pulsed 100 100 Ta=125 C O Ta=25 C O Ta=-40 C 10 O Ta=125 C 10 Ta=25 C O O Ta=-40 C 1 1 10 100 1000 O 1 1 10 100 1000 COLLECTOR CURRENT : IC (mA) COLLECTOR CURRENT : IC (mA) RATING CHARACTERISTIC CURVES ( CHEMF22PT ) 2SC5585 Typical Electrical Characteristics Fig.5 Base-emitter saturation voltage vs. collector current BASER SATURATION VOLTAGE : VBE(sat)(mV) Fig.6 Gain bandwidth product vs. collector current 1000 TRANSITION FREQUENCY : fT(MHZ) 1000 IC/IB=20 pulsed Ta=-40OC O Ta=25 C O Ta=125 C VCE=2V O Ta=25 C pulsed 100 100 10 10 1 1 10 100 1000 1 1 10 100 1000 COLLECTOR CURRENT : IC(mA) EMITTER CURRENT : IE(mA) COLLECTOR OUTPUT CAPACITANCE : Cob (pF) Fig.7 Collector output capacitance vs. collector-base voltage Emitter input capacitance vs. emitter-base voltage 1000 IE=0A f=1MHZ O Ta=25 C EMITTER INPUT CAPACITANCE : Cib (pF) 100 Cib 10 Cob 1 1 10 100 1000 COLLECTOR TO BASE VOLTAGE : VCB(V) RATING CHARACTERISTIC CURVES ( CHUMF22PT ) CHDTC114E Typical Electrical Characteristics Fig.1 Input voltage vs. output current (ON characteristics) 100 50 VO=0.3V Fig.2 Output current vs. input voltage (OFF characteristics) 10m 5m OUTPUT CURRENT : Io (A) VCC=5V INPUT VOLTAGE : VI(on) (V) 20 10 5 2 1 500m 200m 100m 100 200 500 1m 2m 5m 10m 20m 50m 100m Ta =- 40OC 25OC = 100OC 2m 1m 500 200 100 50 20 10 5 2 1 0 Ta=100OC 25OC -40 OC 0.5 1.0 1.5 2.0 2.5 3.0 OUTPUT CURRENT : IO (A) INPUT VOLTAGE : VI(off) (V) Fig.3 DC current gain vs. output current 1k 500 OUTPUT VOLTAGE : VO(on) (V) DC CURRENT GAIN : GI Fig.4 Output voltage vs. output current 1 500m lO/lI=20 Ta=100OC 25OC -40 OC VO =5V Ta=100 C 25OC -40OC O 200 100 50 20 10 5 2 1 100 200 200m 100m 50m 20m 10m 5m 2m 500 1m 2m 5m 10m 20m 50m100m 1m 100 200 500 1m 2m 5m 10m 20m 50m 100m OUTPUT CURRENT : IO (A) OUTPUT CURRENT : IO (A)