CHEMF4PT

CHENMKO ENTERPRISE CO.,LTD SURFACE MOUNT Power Management (Dual Transistor) Tr1:VOLTAGE 12 V olts CURRENT 0.5 Ampere DTr2:VOLTAGE 50 Volts CURRENT 100 m Ampere APPLICATION * Power management circuit C HEMF4PT FEATURE * Small surface mounting type. (SOT-563) * Power switching circuit in a single package. * Mounting cost and area can be cut in half. * Both the 2SA2018 & CHDTC123E in one package. * Built in bias resistor(R1=2.2kΩ, Typ. ) (1) (5) SOT-563 MARKING * F4 0.9~1.1 0.15~0.3 (3) (4) 0.50 0.50 1.5~1.7 1.1~1.3 0.5~0.6 0.09~0.18 6 R1 Tr1 1 R2 DTr2 3 4 CIRCUIT 1.5~1.7 Dimensions in millimeters SOT-563 2SA2018 LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL VCBO VCEO VEBO IC ICP Pc TSTG TJ Note 1. Single Pulse Pw=1ms 2. 120mW per element must not be exceeded Each teminal mounted on a recommended land. 2004-07 PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage CONDITIONS − − − − MIN. MAX. -15 -12 -6 -500 -1000 150 +150 150 UNIT V V V mA mW O DC Output current power dissipation Storage temperature Junction temperature NOTE.1 NOTE.2 − − −55 − C C O CHDTC123E LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL VCC VIN IO DC Output current IC(Max.) PC TSTG Power dissipation Storage temperature Junction temperature NOTE.1 NOTE.2 PARAMETER Supply voltage Input voltage CONDITIONS − -10 − − − −55 − MIN. MAX. 50 +20 100 mA 100 150 +150 150 mW O UNIT V V C TJ Note O C 1. Characteristics of built-in transistor. 2. Each terminal mounter on a recommended land. 2SA2018 CHARACTERISTICS Tamb = 25 °C unless otherwise speciÞed. SYMBOL PARAMETER CONDITIONS IC=-1mA IC=-10uA IE=-10uA VCB=-15V VEB=-6V VCE=-2V,IC=-10mA IC=-200mA,IB=-10mA VCB=-10V,IE=0mA,f=1MHZ VCE=-2V,IE=10mA,f=100MHZ MIN. -12 -15 -6 − − 270 − − − TYP. − − − − − − -100 6.5 260 − − − -100 -100 680 -250 − − MAX. V V V nA nA − mV pF MHz UNIT BVCEO Collector-emitter breakdown voltage BVCBO Collector-base breakdown voltage BVEBO ICBO IEBO hFE VCE(sat) Cob fT Emitter-base breakdown voltage Collector cut-off current Emitter cut-off current DC current gain Collector-emitter saturation voltage Collector output capacitance Transition frequency Note 1.Pulse test: tp≤300uS; δ≤0.02. CHDTC123E CHARACTERISTICS Tamb = 25 °C unless otherwise speciÞed. SYMBOL VIoff) VI(on) VO(on) II IC(off) G1 R1 R2/R1 fT PARAMETER Input off voltage Input on voltage Output voltage Input current Output current DC current gain Input resistor Resistor ratio Transition frequency IE=-5mA, VCE=10.0V f=100MHz = CONDITIONS IO=100uA; VCC=5.0V IO=20mA; VO=0.3V IO=10mA; II=0.5mA VI=5V VI=0V; VCC=50V IO=20mA; VO=5.0V MIN. 0.5 − − − − 20 1.54 0.8 − − − 0.1 − − − 2.2 1.0 250 TYP. MAX. − 3.0 0.3 3.8 0.5 − 2.86 1.2 − V V V mA uA − KΩ − MHz UNIT Note Pulse test: tp≤300uS; δ≤0.02. RATING CHARACTERISTIC CURVES ( CHEMF4PT ) 2SA2018 Typical Electrical Characteristics Fig.1 Ground emitter propagation characteristics 1000 Fig.2 DC current gain vs. collector current 1000 Ta=125 C 25 C DC CURRENT GAIN : hFE O O COLLECTOR CURRENT : IC(mA) VCE=2V pulsed VCE=2V pulsed -40 C 100 O 100 10 Ta=125 C Ta=25 C O O O 10 Ta=-40 C 1 1 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1 10 100 1000 BASE TO EMITTER VOLTAGE : VBE(V) COLLECTOR CURRENT : IC(mA) COLLECTOR SATURATION VOLTAGE : VCE(sat)(mV) 1000 COLLECTOR SATURATION VOLTAGE : VCE(sat)(mV) Fig.3 Collector-emitter saturation voltage vs. collector current ( I ) Ta=25 C pulsed O Fig.4 Collector-emitter saturation voltage vs. collector current ( II ) 1000 IC/IB=20 pulsed 100 Ta=125 C Ta=25 C 10 Ta=-40 C O O O 100 Ta=125 C O Ta=25 C O Ta=-40 C O 10 1 1 10 100 1000 1 1 10 100 1000 COLLECTOR CURRENT : IC (mA) COLLECTOR CURRENT : IC (mA) RATING CHARACTERISTIC CURVES ( CHEMF4PT ) 2SA2018 Typical Electrical Characteristics Fig.5 Base-emitter saturation voltage vs. collector current BASER SATURATION VOLTAGE : VBE(sat)(mV) Fig.6 Gain bandwidth product vs. collector current 1000 TRANSITION FREQUENCY : fT(MHZ) 1000 IC/IB=20 pulsed Ta=-40OC O Ta=25 C O Ta=125 C VCE=2V O Ta=25 C pulsed 100 100 10 10 1 1 10 100 1000 1 1 10 100 1000 COLLECTOR CURRENT : IC(mA) EMITTER CURRENT : IE(mA) COLLECTOR OUTPUT CAPACITANCE : Cob (pF) Fig.7 Collector output capacitance vs. collector-base voltage Emitter input capacitance vs. emitter-base voltage 1000 IE=0A f=1MHZ O Ta=25 C EMITTER INPUT CAPACITANCE : Cib (pF) 100 Cib 10 Cob 1 1 10 100 1000 COLLECTOR TO BASE VOLTAGE : VCB(V) RATING CHARACTERISTIC CURVES ( CHEMF4PT ) CHDTC123E Typical Electrical Characteristics Fig.1 Input voltage vs. output current (ON characteristics) 100 VO=0.3V Fig.2 Output current vs. input voltage (OFF characteristics) 10m 5m 2m 1m 500µ 200µ 100µ 50µ 20µ 10µ 5µ 2µ 1µ 0 Ta=100°C 25°C −40°C INPUT VOLTAGE : VI(on) (V) 50 20 10 5 2 1 500m 200m 100m 100µ 200µ 500µ 1m 2m 5m 10m 20m 50m 100m Ta=−40°C 25°C 100°C OUTPUT CURRENT : Io (A) VCC=5V 0.5 1.0 1.5 2.0 2.5 3.0 OUTPUT CURRENT : IO (A) INPUT VOLTAGE : VI(off) (V) Fig.3 DC current gain vs. output current 1k Fig.4 Output voltage vs. output current 1 DC CURRENT GAIN : G 500 200 100 50 20 10 5 2 1 100µ 200µ 500µ 1m 2m Ta=100°C 25°C −40°C OUTPUT VOLTAGE : VO(on) (V) VO=5V lO/lI=20 500m 200m 100m 50m 20m 10m 5m 2m 1m 100µ 200µ 500µ 1m 2m 5m 10m 20m 50m 100m Ta=100°C 25°C −40°C 5m 10m 20m 50m 100m OUTPUT CURRENT : IO (A) OUTPUT CURRENT : IO (A)