CHT2907APT

CHENMKO ENTERPRISE CO.,LTD SURFACE MOUNT PNP Switching Transistor V OLTAGE 60 Volts APPLICATION * Telephony and proferssional communction equipment. * Other switching applications. C HT2907APT CURRENT 0.6 Ampere FEATURE .041 (1.05) .033 (0.85) SOT-23 .110 (2.80) .082 (2.10) .066 (1.70) .119 (3.04) * Low voltage (Max.=60V) . * High saturation current capability. * Voltage controlled small signal switch. (1) (3) (2) CONSTRUCTION * PNP Switching Transistor .055 (1.40) .047 (1.20) MARKING * 2F.045 (1.15) .033 (0.85) .103 (2.64) .086 (2.20) .028 (0.70) .020 (0.50) .007 (0.177) .018 (0.30) .002 (0.05) CIRCUIT (1) B C (3) E (2) .019 (0.50) * Small surface mounting type. (SOT-23) * High current (Max.=600mA). * Suitable for high packing density. Dimensions in inches and (millimeters) SOT-23 LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL VCBO VCEO VEBO IC ICM IBM Ptot Tstg Tj Tamb Note 1. Transistor mounted on an FR4 printed-circuit board. 2002-7 PARAMETER collector-base voltage collector-emitter voltage emitter-base voltage collector current (DC) peak collector current peak base current total power dissipation storage temperature junction temperature operating ambient temperature CONDITIONS open emitter open base open collector − − − − − − Tamb ≤ 25 °C; note 1 − MIN. MAX. -60 -60 -5 -600 -800 -200 350 +150 150 +150 V V V UNIT mA mA mA mW °C °C °C −65 − −65 RATING CHARACTERISTIC CURVES ( CHT2907APT ) THERMAL CHARACTERISTICS SYMBOL Rth j-a Note 1. Transistor mounted on an FR4 printed-circuit board. CHARACTERISTICS Tamb = 25 °C unless otherwise speciÞed. SYMBOL ICBO IEBO hFE PARAMETER collector cut-off current emitter cut-off current DC current gain CONDITIONS IE = 0; VCB = -60 V IC = 0; VCB = -60 V; Tj = 125 OC IC = 0; VEB = 5 V IC = -0.1 mA; VCE = -10V; note 1 IC = -1.0 mA; VCE = -10V IC = -10 mA; VCE =- 10V IC = -10 mA; VCE = -10V;Ta = -55OC IC = -150 mA; VCE = -10V IC = -150 mA; VCE = -1.0V IC = -500 mA; VCE = -10V VCEsat VBEsat Cc Ce fT F collector-emitter saturation voltage base-emitter saturation voltage collector capacitance emitter capacitance transition frequency noise figure IC = -1 50 mA; IB = -15 m A IC = -5 00 mA; IB = -50 m A IC = -1 50 mA; IB = -15 mA IC = -5 00 mA; IB = -50 mA IE = ie = 0; VCB = - 5 V; f = 1 MHz IC = ic = 0; VBE = -500 mV; f = 1 MHz IC = -2 0 mA; VCE = - 2 0 V; f = 100 MHz − − − 35 50 75 35 100 50 40 − − -0.6 − − − 200 MIN. MAX. -10 -10 -10 − − − − 300 − − -400 -1.6 -1.3 -2.6 8 30 − 4 mV V V V pF pF MHz dB UNIT nA uA nA PARAMETER thermal resistance from junction to ambient CONDITIONS note 1 VALUE 357 UNIT K/W IC = 100 µA; VCE = - 5 V; RS = 1 kΩ; − f = 1.0 kHz − − − − − − Switching times (between 10% and 90% levels); ton td tr toff ts tf Note 1. Pulse test: tp ≤ 300 µs; δ ≤ 0.02. turn-on time delay time rise time turn-off time storage time fall time ICon = -1 50 mA; IBon = -15mA; IBoff = −15 m A 35 10 40 100 80 30 ns ns ns ns ns ns RATING CHARACTERISTIC CURVES ( CHT2907APT ) Total power dissipation Ptot = f (TS) Collector-base capacitance CCB = f (VCB) f = 1MHz 10 2 pF Ccb 5 360 mW 300 270 P tot 240 210 180 150 120 90 60 30 0 0 15 30 45 60 75 90 105 120 10 1 5 °C 150 TS 10 0 10 -1 5 10 0 5 10 1 V VCB 5 10 2 Permissible pulse load Ptotmax / PtotDC = f (tp ) 10 3 Ptot max 5 Ptot DC D= tp T tp T Transition frequency fT = f (IC) VCE = 5V 10 3 MHz fT 5 10 2 5 10 1 5 D= 0 0.005 0.01 0.02 0.05 0.1 0.2 0.5 10 2 5 10 0 10 -6 10 -5 10 -4 10 -3 10 -2 s tp 10 0 10 1 10 0 5 10 1 5 10 2 mA 5 10 3 ΙC RATING CHARACTERISTIC CURVES ( CHT2907APT ) Saturation voltage IC = f (VBEsat , VCEsat) hFE = 10 10 3 mA Delay time t d = f (IC) Rise time tr = f (IC) 10 3 ns VBE = 0 V, VCC = 10 V, VBE = 20 V, VCC = 30 V ΙC 10 2 5 V CE V BE t r, t d 5 tr 10 1 5 10 2 td 5 10 5 10 -2 10 -1 0 0 0.2 0.4 0.6 0.8 1.0 1.2 V 1.6 10 1 0 10 5 10 1 5 10 2 mA 5 10 3 VBE sat , VCE sat ΙC Storage time tstg = f (IC) Fall time t f = f (IC) 10 3 t stg ns 5 tf 10 3 ns 5 VCC = 30 V h FE = 20 h FE = 10 10 2 10 2 5 h FE = 10 h FE = 20 5 10 1 0 10 5 10 1 5 10 2 mA 5 10 3 10 1 0 10 5 10 1 5 10 2 mA 5 10 3 ΙC ΙC RATING CHARACTERISTIC CURVES ( CHT2907APT ) DC current gain hFE = f (IC ) VCE = 5V 10 3 h FE 5 150 OC 25 OC 10 2 -50 OC 5 10 1 -1 10 10 0 10 1 10 2 mA 10 3 ΙC RATING CHARACTERISTIC CURVES ( CHT2907APT ) Test circuits Delay and rise time -30 V 200ohmS Osc. 1k 50ohmS 200 ns t r < 5 ns Input Z 0 = 50ohmS t r < 2ns 0 -16 V Storage and fall time -6 V +15 V Input Z 0 = 50ohmS t r < 2 ns 0 -30 V 50ohmS 200 ns 1k 1k 37ohmS Osc. t r < 5 ns Oscillograph: R > 100ohmS , C < 12pF, tr < 5ns