2N2907A

2N2907A Switching Transistor PNP Silicon Epitaxial Features • MIL−PRF−19500/291 Qualified • Available as JAN, JANTX, and JANTXV • Hermetically Sealed Commercial Product with Option for Military Temperature Range Screening MAXIMUM RATINGS Rating Collector − Emitter Voltage Collector − Base Voltage Emitter − Base Voltage Collector Current − Continuous Total Device Dissipation @ TA = 25°C Derate above 25°C Total Device Dissipation @ TC = 25°C Derate above 25°C Operating and Storage Junction Temperature Range Symbol VCEO VCBO VEBO IC PT PT TJ, Tstg Value −60 −60 −5.0 −600 625 5.0 1.5 12 −65 to +200 Unit Vdc Vdc Vdc mAdc mW mW/°C W mW/°C °C http://onsemi.com COLLECTOR 3 2 BASE 1 EMITTER THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction−to−Ambient Thermal Resistance, Junction−to−Case Symbol RqJA RqJC Max 325 150 Unit °C/W °C/W TO−18 CASE 206AA STYLE 1 Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. ORDERING INFORMATION Device JAN2N2907A JANTX2N2907A JANTXV2N2907A TO−18 Bulk Package Shipping © Semiconductor Components Industries, LLC, 2011 July, 2011 − Rev. 0 1 Publication Order Number: 2N2907A/D 2N2907A ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic OFF CHARACTERISTICS Collector − Emitter Breakdown Voltage (Note 1) (IC = −10 mAdc, IB = 0) Collector − Base Breakdown Voltage (IC = −10 mAdc, IE = 0) Emitter − Base Breakdown Voltage (IE = −10 mAdc, IC = 0) Collector Cutoff Current (VCE = −30 Vdc, VEB(off) = −0.5 Vdc) Collector Cutoff Current (VCB = −50 Vdc, IE = 0) (VCB = −50 Vdc, IE = 0, TA = 150°C) Base Current (VCE = −30 Vdc, VEB(off) = −0.5 Vdc) ON CHARACTERISTICS DC Current Gain (IC = −0.1 mAdc, VCE = −10 Vdc) (IC = −1.0 mAdc, VCE = −10 Vdc) (IC = −10 mAdc, VCE = −10 Vdc) (IC = −150 mAdc, VCE = −10 Vdc) (Note 1) (IC = −500 mAdc, VCE = −10 Vdc) (Note 1) Collector − Emitter Saturation Voltage (Note 1) (IC = −150 mAdc, IB = −15 mAdc) (IC = −500 mAdc, IB = −50 mAdc) Base − Emitter Saturation Voltage (Note 1) (IC = −150 mAdc, IB = −15 mAdc) (IC = −500 mAdc, IB = −50 mAdc) SMALL− SIGNAL CHARACTERISTICS Current − Gain − Bandwidth Product (Notes 1 and 2), (IC = −50 mAdc, VCE = −20 Vdc, f = 100 MHz) |hfe|, (IC = −20 mAdc, VCE = −20 Vdc, f = 100 MHz) Output Capacitance (VCB = −10 Vdc, IE = 0, 100 kHz ≤ f ≤ 1.0 MHz) Input Capacitance (VEB = −2.0 Vdc, IC = 0, f = 1.0 MHz) SWITCHING CHARACTERISTICS Turn−On Time Delay Time Rise Time Turn−Off Time Storage Time Fall Time 1. Pulse Test: See section 4 of MIL−STD−750. 2. fT is defined as the frequency at which |hfe| extrapolates to unity. (VCC = −6.0 Vdc, IC = −150 mAdc, IB1 = IB2 = 15 mAdc) (Figure NO TAG) (VCC = −30 Vdc, IC = −150 mAdc, IB1 = −15 mAdc) (Figures NO TAG and NO TAG) ton td tr toff ts tf − − − − − − 45 10 40 100 80 30 ns ns ns ns ns ns Cobo Cibo fT 200 2.0 − − − − 8.0 30 MHz − pF pF hFE 75 100 100 100 50 − − −0.6 − − − − 300 − −0.4 −1.6 −1.3 −2.6 − V(BR)CEO V(BR)CBO V(BR)EBO ICEX ICBO −60 −60 −5.0 − − − − − − − −50 −0.01 −10 −50 Vdc Vdc Vdc nAdc mAdc Symbol Min Max Unit IB nAdc VCE(sat) Vdc VBE(sat) Vdc http://onsemi.com 2 2N2907A PACKAGE DIMENSIONS TO−18 3 CASE 206AA−01 ISSUE O B DETAIL X NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: INCHES. 3. DIMENSION J MEASURED FROM DIAMETER A TO EDGE. 4. LEAD TRUE POSITION TO BE DETERMINED AT THE GUAGE PLANE DEFINED BY DIMENSION R. 5. DIMENSION F APPLIES BETWEEN DIMENSION P AND L. 6. DIMENSION D APPLIES BETWEEN DIMENSION L AND K. 7. BODY CONTOUR OPTIONAL WITHIN ZONE DEFINED BY DIMEN­ SIONS A, B, AND T. DIM A B C D E F H J K L M N P R T U MILLIMETERS MIN MAX 5.31 5.84 4.52 4.95 4.32 5.33 0.41 0.53 --0.76 0.41 0.48 0.91 1.17 0.71 1.22 12.70 19.05 6.35 --45_BSC 2.54 BSC --1.27 1.37 BSC --0.76 2.54 --INCHES MIN MAX 0.209 0.230 0.178 0.195 0.170 0.210 0.016 0.021 --0.030 0.016 0.019 0.036 0.046 0.028 0.048 0.500 0.750 0.250 --45 _BSC 0.100 BSC --0.050 0.054 BSC --0.030 0.100 --- A B P L C A K E NOTE 7 SEATING PLANE U U R NOTE 5 F T D NOTES 4 & 6 0.007 (0.18MM) A B S C 3X DETAIL X M H M C J N 2 1 3 LEAD IDENTIFICATION DETAIL STYLE 1: PIN 1. EMITTER 2. BASE 3. COLLECTOR ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. 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