CHT856BPT

CHENMKO ENTERPRISE CO.,LTD SURFACE MOUNT PNP Muti-Chip General Purpose Amplifier VOLTAGE 65 Volts APPLICATION * AF input stages and driver applicationon equipment. * Other general purpose applications. C HT856BPT CURRENT 0.1 Ampere FEATURE .041 (1.05) .033 (0.85) SOT-23 * Small surface mounting type. (SOT-23) * High current gain. * Suitable for high packing density. * Low colloector-emitter saturation. * High saturation current capability. .110 (2.80) .082 (2.10) .119 (3.04) (1) .066 (1.70) (3) (2) MARKING * HFE(Q):J10 * HFE(R):J11 * HFE(S):J12 .055 (1.40) .047 (1.20) .103 (2.64) .086 (2.20) .028 (0.70) .020 (0.50) .007 (0.177) .018 (0.30) .002 (0.05) CIRCUIT 1 3 .045 (1.15) .033 (0.85) .019 (0.50) 2 Dimensions in inches and (millimeters) SOT-23 LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL V CBO V CEO VEBO IC PC Tstg Tj Note 1. Transistor mounted on an FR4 printed-circuit board. PARAMETER collector-base voltage collector-emitter voltage emitter-base voltage collector current (DC) CONDITIONS open emitter open base open collector -80 -65 -5 -0.1 UNIT V V V A mW °C °C 2004-10 Collector power dissipation stor age temperature junction temperature 300 −55~+150 +150 RATING CHARACTERISTIC ( CHT856BPT) THERMAL CHARACTERISTICS CHARACTERISTICS Tamb = 25 °C unless otherwise speciÞed. SYMBOL ICBO BVCBO BVCEO BVEBO hFE VCEsat VBEsat Cib Cob fT Note 1. Pulse test: t p ≤ 300 µs; δ ≤ 0.02. 2. hFE: Classification Q: 125 to 250, R: 220 to 475, S: 420 to 800 CONDITIONS IE = 0; VCB = -30 V collector cut-off current IC = 0; VCB = -30 V; TA = 150 O C collector-base breakdown voltage IC =-10uA collector-emitter breakdown voltage IC =-10mA IE =-1uA emitter-base breakdown voltage VCE /I C =-5V/-2 mA current transfer ratio DC IC = -10 mA ; IB = -0.5 mA collector-emitter saturation IC = -100 mA ; I B = -5 mA voltage base-emitter satur ation v oltage emitter input capacitance collector output capacitance transition frequency IC = -10mA;IB = -0.5 mA IC = 0; VCB = - 0 .5V f = 1 MH z ; IE = 0; VCB = - 10V ; f = 1 MH z IE = -20 mA; VCE = 5 V ; f = 100 MHz PARAMETER MIN. − − -80 -65 -5 -125 − − − − − − Typ. − − − − − − − − -700 8 3 200 UNIT MAX. -15 nA -5 uA V − V − − V -800 -300 mV -650 − − − − mV mV pF pF MHz RATING CHARACTERISTIC CURVES ( CHT856BPT) Typical Pulsed Curre nt Gain vs Collector Current 500 V CE = 5V VCES AT - COLLEC TOR EM I TTE R VOLTA GE (V) h FE - TYPICAL PULSED CURRENT GAIN Coll ector -Em itt er Sa tur ati o n Vo ltage vs Coll ect or Cur re nt 0. 3 0. 25 0. 2 0. 15 400 125 C ° β = 10 300 25 C ° 200 25 C 0. 1 0. 05 0 0. 1 1 10 10 0 300 ° 100 - 40 C ° 125 C ° - 40 C ° 0 0. 01 0 .1 1 10 100 I C - COLLECTOR CURRENT (mA) I C - C OLLEC TOR C URRE NT (m A) RATING CHARACTERISTIC CURVES ( CHT856BPT) V BEON - B AS E EMITTER ON VOLTA GE (V) V BESAT - BA SE EM ITTE R VOLTA GE (V) Bas e-Em itt er Sa tur ati on Voltag e vs Co ll ect or Cur re nt 1.2 1 0.8 0.6 0.4 0.2 0 0.1 Bas e E mi tter O N Voltage vs Coll ect or Cur re nt 1 β = 10 0.8 - 40 C 25 C 125 C ° - 40 C 25 C ° ° 0.6 ° ° 125 C ° 0.4 0.2 V CE = 5V 1 10 10 0 3 00 0 0.1 1 10 100 20 0 I C - C OLLEC TOR C URRE NT (m A) I C - C OLLEC TOR C URRE NT (m A) Coll ect or -Cuto ff Cur re nt vs Ambie nt Tem per ature I CBO - C OLLE CTOR CU RR EN T (nA) V CB = 5 0V 10 BVCER - BRE AK DOWN VOLTAGE (V) 10 0 Collector-Emitter Breakdown Voltage with Resistance Between Emitter-Base 95 90 1 85 80 0. 1 75 0. 01 25 50 75 10 0 1 25 70 0.1 1 10 100 1000 T A - A MBI E NT TEMP ER ATUR E ( C) ° RESI STANCE (k Ω) V CE - COLLECTOR-EMITTER VOLTAGE (V) Colle ctor Saturation Region 4 Input and Output Capac itance vs Revers e Voltage 100 Ta = 25 °C 3 f = 1. 0 MHz 2 Ic = 100 uA 50 mA 30 0 mA CAPACITANCE ( pF) 10 Cib Cob 1 0 100 300 700 2000 4000 0.1 1 10 100 I B - BASE CURRENT ( uA) V CE - COLLECTOR VOLTAGE ( V) RATING CHARACTERISTIC CURVES ( CHT856BPT) f T - GAIN BAND WIDTH PRO DU CT (MHz) Gain Band width Product vs Collector Current 30 0 Switching Times vs Collector Current 27 0 24 0 21 0 40 Vce = 5V ts 30 TIME (nS) 18 0 15 0 12 0 90 60 30 20 IB1 = IB2 = Ic / 10 V cc = 10 V 10 tf tr td 10 20 30 50 10 0 200 30 0 0 1 10 20 50 100 150 0 I C - COLLECTO R CURRENT (mA) I C - COLLECTOR CURRENT (mA)