P-Channel MOSFET
BSS84-HF
P-Channel
RoHS Device
Halogen Free
SOT-23
0.114(3.00)
0.110(2.80)
Features
D
0.055(1.40)
0.047(1.20)
-VDS (V) = -50V
G
-ID = -130 mA
S
0.079(2.00)
0.070(1.80)
-RDS(ON) < 10Ω(VGS= -5V)
Circuit diagram
0.006(0.15)
0.003(0.08)
0.046(1.17)
0.037(0.97)
0.098(2.50)
0.091(2.30)
D
- G : Gate
- S : Source
- D : Drain
0.020(0.50)
0.012(0.30)
G
S
Maximum Ratings
Dimensions in inches and (millimeter)
(at TA=25°C unless otherwise noted)
°C
°C
°C
Electrical Characteristics (at T =25°C unless otherwise noted)
A
Parameter
Symbol
Drain-Source Breakdown Voltage
V DSS
Zero Gate Voltage Drain Current
I DSS
Gate-Body Leakage Current
IGSS
Test Conditions
-15
VDS=0V, V GS=±20V
Static Drain-Source On-Resistance
RDS(On)
VGS=-5V, I D=-100mA
Ciss
Output Capacitance
Coss
-0.8
A
±10
A
-2
V
10
VDS=-25V, I D=-100mA, f=1.0KHz
Unit
V
-0.1
VDS=VGS , ID=-1.0mA
Input Capacitance
Max
VDS=-50V, V GS=0V
V GS(th)
gFS
Typ
-50
VDS=-25V, V GS=0V
Gate Threshold Voltage
Forward Transconductance
Min
ID=-250uA, VGS=0V
50
Ω
mS
30
VGS=0V, V DS=-5V, f=1MHz
Reverse Transfer Capacitance
C rss
5
Turn-On DelayTime
t d(on)
2.5
Turn-On Rise Time
tr
Turn-Off DelayTime
t d(off)
VDD=-15V, I D=-0.25A, RL=50
pF
10
1)
1
ns
16
Turn-Off Fall Time
tf
8
Gate Charge
QT
6000
Maximum Body-Diode Continuous Current
IS
-0.13
Maximum Body-Diode Pulsed Current
ISM
-0.52
Diode Forward Voltage
V SD
ISD=-130mA,VGS=0V
-2.5
PC
A
V
Notes :1) Switching Time is Essentially Independent of Operating Temperature.
Company reserves the right to improve product design , functions and reliability without notice.
REV:A
Page 1
SP-JTR25
Comchip Technology CO., LTD.
P-Channel MOSFET
Typical characteristics (at T =25°C unless otherwise noted)
A
0.6
0.5
25 C
VDS = 10 V
0.5
- 55 C
0.45
0.35
0.3
0.3
3.0 V
0.25
0.2
0.2
2.75 V
0.15
2.5 V
0.1
0.1
0
3.25 V
0.4
150 C
0.4
2.25 V
0.05
1
1.5
2
2.5
3
3.5
4
0
0
V GS , GATE - TO- SOURCE VOLTAGE (V )
1
2
9
3
4
5
6
8
9
10
Fig2. On-Region Characteristics
7
VGS= 4.5 V
6.5
150 C
8
7
V DS , DRAIN- TO- SOURCE VOLTAGE (V)
Fig1. Transfer Characteristics
150 C
VGS= 10 V
6
5.5
7
5
6
4.5
25 C
5
4
25 C
3.5
4
3
- 55 C
3
2
VGS= 3.5 V
TJ = 25 C
- 55 C
2.5
0
0.1
0.2
0.3
0.4
0.5
0.6
2
0
0.1
I D , DRAIN CURRENT (A)
0.2
0.3
0.4
0.5
0.6
ID , DRAIN CURRENT (A)
Fig3. On-Resistance versus Drain Current
Fig4. On-Resistance versus Drain Current
Company reserves the right to improve product design , functions and reliability without notice.
REV:A
Page 2
SP-JTR25
Comchip Technology CO., LTD.
P-Channel MOSFET
2
8
1.8
1.6
VDS= 40 V
TJ = 25 C
7
VGS= 10 V
ID = 0.52 A
6
5
1.4
VGS= 4.5 V
ID = 0.13 A
1.2
4
ID = 0.5 A
3
1
2
0.8
1
0.6
- 55
-5
45
95
0
145
0
500
T J , JUNCTION TEMPERATURE (C )
1000
1500
2000
Q T, TOTAL GATE CHARGE (pC)
Fig6. Gate Charge
Fig5. On-Resistance Variation with Temperature
1
0.1
TJ = 150 C
25 C
-55 C
0.01
0.001
0
0.5
1.0
1.5
2.0
2.5
3.0
V SD , DIODE FORWARD VOLTAGE (V)
Company reserves the right to improve product design , functions and reliability without notice.
REV:A
Page 3
SP-JTR25
Comchip Technology CO., LTD.
P-Channel MOSFET
Reel Taping Specification
d
P0
P1
T
E
Index hole
F
W
B
P
C
A
D2
D1 D
W1
Trailer
Device
.......
.......
End
.......
.......
Leader
.......
.......
10 pitches (min)
.......
.......
Start
10 pitches (min)
Direction of Feed
SOT-23
SOT-23
SYMBOL
A
B
C
d
D
D1
D2
(mm)
3.10 ± 0.10
2.85 ± 0.10
1.40 ± 0.10
1.55 ± 0.10
178 ± 1
50.0 MIN.
13.0 ± 0.20
(inch)
0.122 ± 0.004
0.112 ± 0.004
0.055 ± 0.004
0.061 ± 0.004
7.008 ± 0.04
1.969 MIN.
0.512 ± 0.008
SYMBOL
E
F
P
P0
P1
W
W1
(mm)
1.75 ± 0.10
3.50 ± 0.05
4.00 ± 0.10
4.00 ± 0.10
2.00 ± 0.05
8.00 ± 0.30
14.4 MAX.
(inch)
0.069 ± 0.004
0.138 ± 0.002
0.157 ± 0.004
0.157 ± 0.004
0.079 ± 0.002
0.315 ± 0.012
0.567 MAX.
Company reserves the right to improve product design , functions and reliability without notice.
REV:A
Page 4
SP-JTR25
Comchip Technology CO., LTD.
P-Channel MOSFET
Marking Code
3
Part Number
Marking Code
BSS84-HF
PD
PD
1
2
Suggested PAD Layout
SOT-23
SIZE
(mm)
(inch)
A
0.80
0.031
B
1.90
0.075
C
2.02
0.080
D
2.82
0.111
A
C
D
B
Standard Packaging
Case Type
SOT-23
Qty per Reel
Reel Size
(Pcs)
(inch)
3000
7
Company reserves the right to improve product design , functions and reliability without notice.
REV:A
Page 5
SP-JTR25
Comchip Technology CO., LTD.
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