BSS84W RFG

BSS84W Taiwan Semiconductor P-Channel Power MOSFET -60V, -140mA, 8Ω FEATURES ● ● ● ● ● KEY PERFORMANCE PARAMETERS Low RDS(ON) to minimize conductive losses Logic level Low gate charge for fast power switching RoHS Compliant Halogen-free according to IEC 61249-2-21 PARAMETER VALUE UNIT VDS -60 V RDS(on) (max) VGS = -10V 8 VGS = -4.5V 10 Qg APPLICATIONS 1 Ω nC ● Low Side Load Switching ● Level Shift Circuits ● General Switch Circuits SOT-323 Note: MSL 1 (Moisture Sensitivity Level) per J-STD-020 ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise noted) PARAMETER SYMBOL LIMIT UNIT Drain-Source Voltage VDS -60 V Gate-Source Voltage VGS ±20 V Continuous Drain Current (Note 1) TA = 25°C TA = 125°C Pulsed Drain Current Total Power Dissipation ID IDM TA = 25°C TA = 125°C Operating Junction and Storage Temperature Range PD -140 -61 -0.56 298 60 mA A mW TJ, TSTG - 55 to +150 °C SYMBOL MAXIMUM UNIT RӨJA 420 °C/W THERMAL PERFORMANCE PARAMETER Junction to Ambient Thermal Resistance Thermal Performance Note: RӨJA is the sum of the junction-to-case and case-to-ambient thermal resistances. The casethermal reference is defined at the solder mounting surface of the drain pins. R ӨJC is guaranteed by design while RӨCA is 2 determined by the user’s board design. The RӨJA limit presented here is based on mounting on a 1 in pad of 2 oz copper. 1 Version: A2007 BSS84W Taiwan Semiconductor ELECTRICAL SPECIFICATIONS (TA = 25°C unless otherwise noted) PARAMETER CONDITIONS SYMBOL MIN TYP MAX UNIT Static Drain-Source Breakdown Voltage VGS = 0V, ID = -250µA BVDSS -60 -- -- V Gate Threshold Voltage VGS = VDS, ID = -250µA VGS(TH) -0.9 -1.5 -2.0 V Gate-Source Leakage Current VGS = ±20V, VDS = 0V IGSS -- -- ±100 nA -- -- -1 -- -- -100 -- 3.6 8 -- 3.9 10 gfs -- 0.5 -- Qg -- 1.9 -- Qg -- 1 -- Qgs -- 0.3 -- Qgd -- 0.3 -- Ciss -- 37 -- Coss -- 15 -- Crss -- 7 -- td(on) -- 10 -- tr -- 15 -- td(off) -- 21 -- tf -- 78 -- VSD -- -- -1.2 V VGS = 0V, VDS = -60V Drain-Source Leakage Current IDSS VGS = 0V, VDS = -60V TJ =125°C Drain-Source On-State Resistance VGS = -10V, ID = -140mA (Note 3) VGS = -4.5V, ID = -120mA Forward Transconductance Dynamic (Note 3) RDS(on) VDS = -5V, ID = -140mA µA Ω S (Note 3) VGS = -10V, VDS = -30V, Total Gate Charge ID = -140mA Total Gate Charge VGS = -4.5V, VDS = -30V, Gate-Source Charge ID = -120mA Gate-Drain Charge Input Capacitance VGS = 0V, VDS = -30V Output Capacitance f = 1.0MHz Reverse Transfer Capacitance Switching nC pF (Note 3) Turn-On Delay Time Turn-On Rise Time VGS = -10V, VDS = -30V, Turn-Off Delay Time ID = -140mA, RG = 6Ω Turn-Off Fall Time ns Source-Drain Diode Forward Voltage (Note 2) VGS = 0V, IS = -140mA Reverse Recovery Time IS = -140mA , trr -- 24 -- ns Reverse Recovery Charge dI/dt = 100A/μs Qrr -- 14 -- nC Notes: 1. Silicon limited current only. 2. Pulse test: Pulse Width ≤ 300µs, duty cycle ≤ 2%. 3. Switching time is essentially independent of operating temperature. ORDERING INFORMATION ORDERING CODE BSS84W RFG PACKAGE PACKING SOT-323 3,000pcs / 7” Reel 2 Version: A2007 BSS84W Taiwan Semiconductor CHARACTERISTICS CURVES (TA = 25°C unless otherwise noted) Output Characteristics Transfer Characteristics 0.6 -ID, Drain Current (A) -ID, Drain Current (A) 1.6 1.2 VGS=-10V VGS=-7V VGS=-5V VGS=-4.5V VGS=-4V VGS=-3.5V 0.8 0.4 0.5 25℃ 0.4 0.3 0.2 0.1 150℃ 0 0 1 2 3 4 5 6 7 0 On-Resistance vs. Drain Current 2 3 4 Gate-Source Voltage vs. Gate Charge 10 7 -VGS, Gate to Source Voltage (V) RDS(on), Drain-Source On-Resistance (Ω) 1 -VGS, Gate to Source Voltage (V) -VDS, Drain to Source Voltage (V) 6 5 VGS=-4.5V 4 VGS=-10V 3 2 1 0 0 0.2 0.4 0.6 0.8 VDS=-30V ID=-140mA 8 6 4 2 0 0 1 0.5 1 1.5 2 Qg, Gate Charge (nC) -ID, Drain Current (A) On-Resistance vs. Junction Temperature On-Resistance vs. Gate-Source Voltage 2.5 10 RDS(on), Drain-Source On-Resistance (Ω) RDS(on), Drain-Source On-Resistance (Normalized) -55℃ 0 VGS=-10V ID=-140mA 2 1.5 1 0.5 0 -75 -50 -25 0 25 50 75 100 125 150 TJ, Junction Temperature (°C) 9 8 7 6 5 ID=-140mA 4 3 2 1 0 2 3 4 5 6 7 8 9 10 -VGS, Gate to Source Voltage (V) 3 Version: A2007 BSS84W Taiwan Semiconductor CHARACTERISTICS CURVES (TA = 25°C unless otherwise noted) BVDSS vs. Junction Temperature BVDSS (Normalized) Drain-Source Breakdown Voltage Capacitance vs. Drain-Source Voltage 60 C, Capacitance (pF) 50 40 Ciss 30 20 Coss 10 Crss 0 0 10 20 30 40 50 1.2 ID=-1mA 1.1 1 0.9 0.8 -75 60 -VDS, Drain to Source Voltage (V) -25 0 25 50 75 100 125 150 TJ, Junction Temperature (°C) Maximum Safe Operating Area, Junction-to-Ambient Source-Drain Diode Forward Current vs. Voltage 1 1 -IS, Reverse Drain Current (A) RDS(ON) -ID, Drain Current (A) -50 100us 0.1 1ms 10ms 0.01 100ms 1s 10s DC SINGLE PULSE RӨJA=420°C/W TA=25°C 0.001 -55℃ 150℃ 25℃ 0.1 1 10 100 0.2 0.4 0.6 0.8 1 1.2 -VSD, Body Diode Forward Voltage (V) -VDS, Drain to Source Voltage (V) Normalized Thermal Transient Impedance, Junction-to-Ambient Normalized Effective Transient Thermal Impedance, ZӨJA 10 SINGLE PULSE RӨJA=420°C/W 1 Duty=0.5 Duty=0.2 Duty=0.1 Duty=0.05 Duty=0.02 Duty=0.01 Single 0.1 0.01 0.0001 0.001 0.01 0.1 Notes: Duty = t1 / t2 TJ = TA + PDM x ZӨJA x RӨJA 1 10 100 t, Square Wave Pulse Duration (sec) 4 Version: A2007 BSS84W Taiwan Semiconductor PACKAGE OUTLINE DIMENSIONS (Unit: Millimeters) SOT-323 SUGGESTED PAD LAYOUT (Unit: Millimeters) MARKING DIAGRAM B84FYM B84 F Y M = Device code = Site Code = Year Code = Month code O =Jan P S =May T W =Sep X =Feb =Jun =Oct Q =Mar U =Jul Y =Nov 5 R =Apr V =Aug Z =Dec Version: A2007 BSS84W Taiwan Semiconductor Notice Specifications of the products displayed herein are subject to change without notice. TSC or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies. Purchasers are solely responsible for the choice, selection, and use of TSC products and TSC assumes no liability for application assistance or the design of Purchasers’ products. Information contained herein is intended to provide a product description only. No license, express or implied, to any intellectual property rights is granted by this document. Except as provided in TSC’s terms and conditions of sale for such products, TSC assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of TSC products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications. Customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify TSC for any damages resulting from such improper use or sale. 6 Version: A2007