CDBF70-HF

S MD Schottky Barrier Diode SMD Diodes Specialist CDBF70-HF (RoHS Device) Io = 70 mA V R = 7 0 Volts Features Halogen free. L ow forward Voltage. Designed for mounting on small surface. Extremely thin / leadless package. Majority carrier conduction. 0.051(1.30) 0.043(1.10) 1005(2512) 0.102(2.60) 0.095(2.40) Mechanical data 0.035(0.90) C ase: 1005(2512) standard package, molded plastic. Terminals: Gold plated, solderable per MIL-STD-750,method 2026. Marking code: cathode band & BG Mounting position: Any Weight: 0.006 gram(approx.). 0.027(0.70) 0.020(0.50) Typ. 0.012 (0.30) Typ. 0.040(1.00) Typ. Dimensions in inches and (millimeter) Maximum Rating ( at T A =25 C unless otherwise noted) O Parameter Peak reverse voltage Reverse voltage RMS reverse voltage Average forward rectified current Forward current,surge peak Power dissipation Storage temperature Junction temperature Conditions Symbol Min Typ Max Unit V RM VR V R(RMS) IO 70 70 49 70 0.1 200 -65 +125 +125 V V V mA A mW O 8.3 ms single half sine-wave superimposed on rate load(JEDEC method) I FSM PD T STG Tj C C O Electrical Characteristics ( at T A =25 C unless otherwise noted) O Parameter Forward voltage Reverse current Capacitance between terminals Reverse recovery time I F = 1 mA I F = 1 5mA V R = 5 0V Conditions Symbol Min Typ Max Unit VF IR CT T rr 0.41 1 0.1 2 5 V uA pF nS f = 1 MHz, and 0 VDC reverse voltage I F =I R =10mA,Irr=0.1xIR,RL=100 Ohm REV:A QW-G1009 Page 1 Comchip Technology CO., LTD. S MD Schottky Barrier Diode SMD Diodes Specialist RATING AND CHARACTERISTIC CURVES (CDBF70-HF) F ig. 1 - Forward characteristics 1 00 C O Fig. 2 - Reverse characteristics 100u O 12 5 75 C 25 C O Forward current (mA ) Reverse current ( A ) 0C O -40 C O 10u 125 C O 10 1u 75 C O 1 00n 25 C O 1 10n 0C O 1n -40 C O 0.1 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 0.1n 0 10 20 30 40 50 60 70 Forward voltage (V) Reverse voltage (V) Fig.3 - Capacitance between terminals characteristics Capacitance between terminals ( P F) 2.0 120 Fig.4 - Current derating curve Average forward current(%) 1.8 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0 0 5 10 15 20 f=1MHz O T A =25 C Mounting on glass epoxy PCBs 100 80 60 40 20 0 25 30 35 40 0 25 50 75 100 O 125 150 Reverse voltage (V) Ambient temperature ( C) REV:A QW-G1009 Page 2 Comchip Technology CO., LTD. S MD Schottky Barrier Diode SMD Diodes Specialist Reel Taping Specification P0 P1 d Index hole E T F B Polarity W C P A 12 0 o D2 D1 D W1 Trailer ....... ....... 10 pitches (min) Device ....... ....... ....... ....... Leader ....... ....... 10 pitches (min) End Start Direction of Feed SYMBOL A 1.55 ± 0.10 0.061 ± 0.004 B 2.65 ± 0.10 0.104 ± 0.004 C 1.05 ± 0.10 0.041 ± 0.004 d 1.55 ± 0.05 0.061 ± 0.002 D 178 ± 1 7.008 ± 0.04 D1 60.0 MIN. 2.362 MIN. D2 13.0 ± 0.20 0.512 ± 0.008 F/1005 (mm) (inch) SYMBOL E 1.75 ± 0.10 0.069 ± 0.004 F 3.50 ± 0.05 0.138 ± 0.002 P 4.00 ± 0.10 0.157 ± 0.004 P0 4.00 ± 0.10 0.157 ± 0.004 P1 2.00 ± 0.05 0.079 ± 0.004 T 0.23 ± 0.05 0.009 ± 0.002 W 8.00 ± 0.20 0.315 ± 0.008 W1 13.5 MAX. 0.531 MAX. F/1005 (mm) (inch) REV:A QW-G1009 Page 3 Comchip Technology CO., LTD. S MD Schottky Barrier Diode SMD Diodes Specialist Marking Code Park Number CDBF70-HF Marking Code BG BG Suggested PAD Layout F/1005 SIZE (mm) A B C D E 2.10 1.20 1.20 3.30 0.90 (inch) 0.083 0.047 0.047 C D A E 0.130 B 0.035 Standard Package Qty per Reel Case Type (Pcs) F/1005 4000 Reel Size (inch) 7 REV:A QW-G1009 Page 4 Comchip Technology CO., LTD.