CDBHD240-G

COMCHIP Schottky Bridge Rectifiers SMD DIODE SPECIALIST CDBHD220-G Thru 260-G ~ + Reverse Voltage: 20 - 60 Volts Forward Current: 2.0 Amp ~ – Features Mini-DIP • Schottky barrier chips in bridge • Metal-Semiconductor junction with guard ring • Highsurge current capability • Silicon epitaxial planar chips • For use in low voltage, high efficiency inverters, free wheeling, and polarity protection applications • Lead-free part, meet RoHS requirements .106(2.7) .090(2.3) + – Mechanical Data .031(0.8) .019(0.5) • Case: Mini-Dip bridge (TO-269AA) plastic molded case • Epoxy: UL94-V0 rated flame retardant • Terminals: Solderable per MIL-STD-750 Method 2026 • Polarity: As marked on body • Mounting Position: Any • Weight: 0.0078 ounces, 0.22 grams .043(1.1) .027(0.7) .275(7.0) Max. ~ .165(4.2) .150(3.8) ~ C .02(0.5) .016(0.41) .006(0.15) .067(1.7) .057(1.3) .193(4.90) .177(4.50) .106(2.7) .090(2.3) .051(1.3) .035(0.9) .114(2.90) .094(2.40) .008(0.2) Max. Unit :inch(mm) MAXIMUM RATING AND ELECTRICAL CHARACTERISTICS Ratings at 25°C ambient temperature unless otherwise specified CDBHD - Symbols 220 240 260 Units Maximum Recurrent Peak Reverse Voltage V RRM 20 40 60 Volts Maximum RMS Voltage V RMS 14 28 42 Volts Maximum DC Blocking Voltage V DC 20 40 60 Volts Maximum Average Forward Rectified Current 0.2x0.2” (5.0x5.0mm) copper pad area, see Figure 1 I AV 2.0 Amps I FSM 50.0 Amps Peak Forward Surge Current 8.3mS single half sine-wave superimp osed on rated load (JEDEC Me thod) Maximum Forward Voltage at 1.0A (Note 1) Maximum DC Reverse Current at Rated DC Blocking Voltage VF T A = 25°C T A = 100 °C IR 0.50 0.70 0.5 Volts mA 20.0 Typical Junction Capacitance (Note 2) CJ 150 pF Typical Thermal Resistance (Note 3) R θJA R θJL 85.0 20.0 °C/W TJ -55 ~ +125 °C T STG -55 ~ +150 °C Operating Junction Temperature Range Storage Temperature Range : Note 1. Pulse test: 300µS pu lse wi dth, 1% du ty cy cle 2. Me asured at 1.0MH z an d ap plied reverse vo ltage of 4.0 Volts 3. Therma l resistance from junction to am bient and from junction to lead P.C.B. mo unted on 0. 2x0.2”(5.0x5.0mm ) co pper pa d ar eas. MDS0703001A Page 1 COMCHIP Schottky Bridge Rectifiers SMD DIODE SPECIALIST 2.4 2.0 1.6 CDBHD220-G - 260-G 1.2 0.8 single phase half wave 60Hz resistive or inductive load 3.75”(9.5mm) lead length 0.4 0 25 50 75 100 125 150 175 Peak Forward Surge Current (A) Average Forward Current (A) Fig.1 - Forward Current Derating Curve Lead Temperature ( °C) Fig. 2 - Maximum Non-Repetitive Peak Forward Surge Current 100 10 T L =110°C 8.3mS single half sine-wave (JEDEC Method) 1 1 10 100 Number of Cycles at 60 Hz Fig. 3 - Typical Instantaneour Forward Characteristics Instantaneous Reverse Current (mA) Fig. 4A - Typical Reverse Characteristics Instantaneous Forward Current (A) 10 CDBHD260-G CDBHD220-G - 240-G 1.0 0.1 0 0.2 0.4 0.6 100 10 T J =100°C 1.0 T J =75°C 0.1 0.01 0.001 0 0.8 Instantaneous Forward Voltage (Volts) T J =125°C T J =25°C 20 40 60 80 100 Fig. 5 - Typical Junction Capacitance Junction Capacitance (pF) 1000 100 T J =25°C f=1.0MHz 10 0.1 1.0 10 100 Reverse Voltage (Volts) MDS0703001A 120 140 Percent of Rated Peak Reverse Voltage ( %) Page 2