CDBU0230L

SMD Schottky Barrier Diode COMCHIP SMD Diodes Specialist C DBU0230L I o = 200 mA V R = 30 Volt s Features L ow forward Voltage (Lead-free Device) Designed for mounting on small surface. Extremely thin/leadless package. Majority carrier conduction. 0603(1608) 0.071(1.80) 0.063(1.60) 0.039(1.00) 0.031(0.80) Mechanical data C ase: SOD-523F (1608) Standard package , molded plastic. Terminals: Gold plated, solderable per MIL-STD-750, method 2026. Polarity: Indicated by cathode band. 0.012 (0.30) Typ. 0.014(0.35) Typ. 0.033(0.85) 0.027(0.70) Mounting position: Any. 0.018(0.45) Typ. Weight: 0.003 gram (approximately). Dimensions in inches and (millimeter) Maximum Rating ( at T A = 2 5 C unless otherwise noted ) P arameter Repetitive peak reverse voltage Reverse voltage Average forward rectified current Forward current , surge peak Storage temperature Junction temperature 8 .3 ms single half sine-wave superimposed on rate load ( JEDEC method ) C onditions Symbol M in Typ Max U nit V RRM VR Io I FSM T STG Tj - 40 -40 35 30 200 1 + 125 +125 V V mA A C C E lectrical Characteristics ( at T A = 2 5 C unless otherwise noted ) P arameter Forward voltage Reverse current I F = 2 00 mA V R = 10 V C onditions Symbol M in Typ M ax Unit VF IR 0 .5 30 V uA REV:A Q W-A1025 Page 1 SMD Schottky Barrier Diode COMCHIP SMD Diodes Specialist RATING AND CHARACTERISTIC CURVES (CDBU0230L) Fig. 1 - Forward characteristics 1000 1m F ig. 2 - Reverse characteristics 75 C Forward current (mA ) 100 Reverse current ( A ) 100u 5 C o 10u 25 C 12 75 10 C o C o 25 o 25 C 1u 1 100n 25 C 0 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 10n 0 5 10 15 20 25 30 Forward voltage (V) Reverse voltage (V) Fig. 3 - Capacitance between terminals characteristics C apacitance between terminals (pF) 100 F ig. 4 - Current derating curve Average forward current ( % ) 100 80 60 40 20 0 10 1 0 5 10 15 20 25 30 0 25 50 75 100 125 Reverse voltage (V) Ambient temperature ( C ) REV:A Q W-A1025 Page 2