SMD Efficient Fast Recovery Rectifier
COMCHIP
w ww.comchip.com.tw
C EFB201 Thru CEFB205
R everse Voltage: 50 - 600 Volts Forward Current: 2.0 Amp
Features
I deal for surface mount applications Easy pick and place Plastic package has Underwriters Lab. flammability classification 94V-0 Super fast recovery time for high efficient Built-in strain relief Low forward voltage drop
SMB/DO-214AA
0.083(2.11) 0.075(1.91) 0.185(4.70) 0.160(4.06)
0.155(3.94) 0.130(3.30)
Mechanical Data
0.096(2.44) 0.083(2.13)
0.012(0.31) 0.006(0.15)
C ase: JEDEC DO-214AA molded plastic Terminals: solderable per MIL-STD-750, method 2026 Polarity: Color band denotes cathode end Mounting position: Any Approx. Weight:0.093 gram
0.050(1.27) 0.030(0.76)
0.220(5.59) 0.200(5.08)
0.008(0.20) 0.203(0.10)
Dimensions in inches and (millimeter)
Maximum Ratings and Electrical Characterics
P arameter Max. Repetitive Peak Reverse Voltage Max. DC Blocking Voltage Max. RMS Voltage Peak Surge Forward Current 8.3ms single half sine-wave superimposed on rate load ( JEDEC method ) Max. Average Forward Current Max. Instantaneous Forward Current at 2.0 A Reverse recovery time Max. DC Reverse Current at Rated DC Blocking Voltage Ta=25 C Ta=100 C Max. Thermal Resistance (Note 1) Operating Junction Temperature Storage Temperature Symbol V RRM V DC V RMS I FSM CEFB 201 50 50 35 CEFB 202 100 100 70 CEFB 203 200 200 140 CEFB 204 400 400 280 CEFB 205 600 600 420
Unit
V V V A
40
35
Io VF Trr IR R
0.875 25
2.0
1.1 35 1.25 50
A V nS uA
5 .0 250 15 -55 to +150 -55 to +150
JL
C /W C C
Tj T STG
N ote 1: Thermal resistance from junction to lead P.C.B. Mounted on 8.0x8.0 mm copper pad areas.
M DS0210023A
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SMD Efficient Fast Recovery Rectifier S MD
COMCHIP
www.comchip.com.tw
Rating and Characteristic Curves (CEFB201 Thru CEFB205)
Fig. 1 - Reverse Characteristics
1 00
10
F ig.2 - Forward Characteristics
CEFB201-203
R everse Current ( uA )
10
Forward current ( A )
Tj=125 C
1.0
CEFB204 CEFB205
0.1
1.0
Tj=75 C
0.1 Tj=25 C 0. 01 0
0.01
Tj=25 C Pulse width 300uS 4% duty cycle
0.001
20
40
60
80
100
120
140
0 0 .2
0.4
0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 Forward Voltage (V)
P ercent of Rated Peak Reverse Voltage (%)
F ig. 3 - Junction Capacitance
200 1 00
J unction Capacitance (pF)
Fig. 4 - Non Repetitive Forward Surge Current
P eak Surge Forward Current ( A )
50
8.3mS Single Half Sine Wave JEDEC methode
40
30 Tj=25 C 20
Tj=25 C
10
10 0
2 0.1
1.0
10
100
1
5
10
50
1 00
Reverse Voltage (V)
N umber of Cycles at 60Hz
Fig. 5 - Test Circuit Di agram and Reverse Recovery Time Characteristics
50W NONINDUCTIVE 10W NONINDUCTIVE +0.5A
Fig. 6 - Current Derating Curve
2.8
Average Forward Current ( A )
trr
| | | | | | | |
2.4 2.0 1.6 1.2 0.8 0.4 00
(+) 25Vdc (approx.) () 1W NONINDUCTIVE OSCILLISCOPE (NOTE 1) D.U.T.
() PULSE GENERATOR (NOTE 2) (+) 0 -0.25A
S ingle Phase Half Wave 60Hz
NOTES: 1. Rise Time= 7ns max., Input Impedance= 1 megohm.22pF. 2. Rise Time= 10ns max., Source Impedance= 50 ohms.
-1.0A 1cm SET TIME BASE FOR 50 / 10ns / cm
25
50
75
100
125
150
175
Ambient Temperature ( C)
MDS0210023A
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