2N5322

PNP 2N5322 – 2N5323 SILICON PLANAR EPITAXIAL TRANSISTORS The 2N5322 and 2N5323 are PNP transistors mounted in TO-39 metal case . They are especially intended for high-voltage medium power applications in industrial and commercial equipements. Compliance to RoHS ABSOLUTE MAXIMUM RATINGS Symbol VCEO VCBO VCEV VEBO IC IB PD Ratings Collector-Emitter Voltage (IB = 0) Collector-Base Voltage (IE = 0) Collector-Emitter Voltage (VBE = 1.5V) Emitter-Base Voltage (IC = 0) Collector Current Base Current @ Tamb = 25° Total Power Dissipation @ Tcase= 25° 2N5322 2N5323 2N5322 2N5323 2N5322 2N5323 2N5322 2N5323 2N5322 2N5323 2N5322 2N5323 2N5322 2N5323 2N5322 2N5323 2N5322 2N5323 2N5322 2N5323 Value -75 -50 -100 -75 -100 -75 -6 -5 -2 -1 1 Unit V V V V A A Watts 10 -65 to +200 -65 to +200 °C °C TJ TStg Junction Temperature Storage Temperature range THERMAL CHARACTERISTICS Symbol RthJ-a RthJ-c Ratings Thermal Resistance, Junction to ambient Thermal Resistance, Junction to case 2N5322 2N5323 2N5322 2N5323 Value 175 17.5 Unit °C/W °C/W COMSET SEMICONDUCTORS 1/3 PNP 2N5322 – 2N5323 ELECTRICAL CHARACTERISTICS TC=25°C unless otherwise noted Symbol ICBO IEBO VCEO VCEV VEBO hFE (1) VCE(SAT) (1) VBE (1) fT ton toff Ratings Collector Cutoff Current Emitter Cutoff Current Collector Emitter Breakdown Voltage Collector Emitter Breakdown Voltage Emitter Base Breakdown Voltage DC Current Gain Collector-Emitter saturation Voltage Base-Emitter Voltage Transition frequency Turn-on Time Turn-off Time Test Condition(s) VCB = -80 V, IE =0 VCB = -60 V, IE =0 VEB = -5 V, IC =0 VEB = -4 V, IC =0 IC = -10 mA, IB =0 IC = -100 µA VBE = 1.5V IE = -100 µA, IC =0 IC = -500 mA VCE = -4 V I C = -1 A VCE = -2 V IC = -500 mA, IB = -50 mA IC = -500 mA, VCE = -4 V IC = -50 mA, VCE = -4 V f = 10 MHz IC = -500 mA, VCC = -30 V IB1 = -50 mA IC = 500 mA, VCC = 30 V IB1 = -IB2 = -50 mA Min Typ -0.1 -0.5 -75 -50 -100 -75 -6 -5 30 40 10 50 - Mx -0.5 -5 130 250 -0.7 -1.2 -1.1 -1.4 100 1000 Unit µA µA V V V 2N5322 2N5323 2N5322 2N5323 2N5322 2N5323 2N5322 2N5323 2N5322 2N5323 2N5322 2N5323 2N5322 2N5322 2N5323 2N5322 2N5323 2N5322 2N5323 2N5322 2N5323 2N5322 2N5323 - V V MHz ns ns (1) Pulse conditions : tp < 300 µs, δ =1% COMSET SEMICONDUCTORS 2/3 PNP 2N5322 – 2N5323 MECHANICAL DATA CASE TO-39 DIMENSIONS (mm) min A B D E F G H I L 12.7 5.08 45° typ max 0.49 6.6 8.5 9.4 1.2 0.9 - Pin 1 : Pin 2 : Case : Emitter Base Collector Information furnished is believed to be accurate and reliable. However, CS assumes no responsability for the consequences of use of such information nor for errors that could appear. Data are subject to change without notice. COMSET SEMICONDUCTORS 3/3