2N5322

2N5322 2N5323 SMALL SIGNAL PNP TRANSISTORS s s s SILICON EPITAXIAL PLANAR PNP TRANSISTORS MEDIUM POWER AMPLIFIER NPN COMPLEMENTS ARE 2N5320 AND 2N5321 DESCRIPTION The 2N5322 and 2N5323 are silicon epitaxial planar PNP transistors in Jedec TO-39 metal case. They are especially intended for high-voltage medium power application in industrial and commercial equipments. The complementary NPN types are respectively the 2N5320 and 2N5321 TO-39 INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol V CBO V CEV V CEO V EBO IC I CM IB P tot P tot T stg , T j Parameter 2N5322 Collector-Base Voltage (I E = 0 ) Collector-Emitter Voltage (V BE = - 1.5V) Collector-Emitter Voltage (I B = 0 ) Emitter-Base Voltage (I C = 0 ) Collector Current Collector Peak Current Base Current Total Dissipation at T amb = 2 5 o C Total Dissipation at T c = 25 o C Storage and Junction Temperature -100 -100 -75 -6 -1.2 -2 -1 1 10 -65 to 200 Value 2N5323 -75 -75 -50 -5 V V V V A A A W W o Unit C June 1997 1/4 2N5322/2N5323 THERMAL DATA R thj-case R thj-amb Thermal Resistance Junction-Case Thermal Resistance Junction-Ambient Max Max 17.5 175 o o C/W C/W ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) Symbol I CBO I EBO V (BR)CEV Parameter Collector Cut-off Current (I E = 0 ) Collector Cut-off Current (I C = 0) Collector-Emitter Breakdown Voltage (V BE = 1.5V) Test Conditions V CB = - 80 V V CB = - 60 V V EB = -5 V V EB = -4 V I C = - 100 µ A for 2 N5322 for 2 N5323 I C = - 10 mA for 2 N5322 for 2 N5323 I E = -100 µ A for 2 N5322 for 2 N5323 I C = - 500 mA for 2 N5322 for 2 N5323 I C = - 500 mA for 2 N5322 for 2 N5323 for 2 N5322 I C = - 500 mA IC = -1 A for 2 N5323 I C = - 500 mA I C = - 500 mA I B1 = - 50 mA I B = - 50 mA - 0.7 -1.2 V CE = -4 V - 1.1 -1.4 V CE = - 4 V V CE = -2 V V CE = - 4 V f = 10 MHz V CC = - 30 V 30 10 40 50 100 1000 130 V V V V for 2 N5322 for 2 N5323 for 2 N5322 for 2 N5323 -100 -75 -75 -50 -6 -5 -0.1 -0.5 Min. Typ. Max. -0.5 -5 Unit µA µA µA µA V V V V V V V (BR)CEO ∗ Collector-Emitter Breakdown Voltage (I B = 0) V (BR)EBO Emitter-Base Breakdown Voltage (I C = 0 ) Collector-Emitter Saturation Voltage Base-Emitter Voltage V CE(sat) ∗ V BE ∗ h FE ∗ DC Current Gain 250 MHz ns ns fT t on t off Transition Frequency Turn-on Time Turn-off Time I C = - 50 mA V CE = - 4 V I C = - 500 mA V CC = - 30 V I B1 = - IB2 = - 50 mA ∗ Pulsed: Pulse duration = 300 µs, duty cycle = 1 % 2/4 2N5322/2N5323 TO-39 MECHANICAL DATA mm DIM. MIN. A B D E F G H I L 5.08 1.2 0.9 45o (typ.) 12.7 0.49 6.6 8.5 9.4 0.200 0.047 0.035 TYP. MAX. MIN. 0.500 0.019 0.260 0.334 0.370 TYP. MAX. inch G I H D A L F E B P008B 3/4 2N5322/2N5323 Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of SGS-THOMSON Microelectonics. © 1997 SGS-THOMSON Microelectronics - Printed in Italy - All Rights Reserved SGS-THOMSON Microelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - France - Germany - Hong Kong - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A . 4/4