2N6371

2N6253 - 2N6254 - 2N6371 HIGH POWER SILICON NPN TRANSISTORS The 2N6253, 2N6254, and 2N6371 are silicon NPN transistors intended for a wide variety of high-power applications. The construction of these devices renders them highly resistant to second breakdown over a wide range of operating conditions. These devices differ in maximum ratings for voltage and power dissipation. All are supplied in JEDEC TO-3 hermetic steel packages. ABSOLUTE MAXIMUM RATINGS Symbol VCEO(SUS) VCBO VCER(SUS) Collector-Emitter Voltage Ratings 2N6253 2N6254 2N6371 2N6253 2N6254 2N6371 2N6253 2N6254 2N6371 2N6253 2N6254 2N6371 2N6253 2N6254 2N6371 2N6253 2N6254 2N6371 2N6253 2N6254 2N6371 Value 45 80 40 55 100 50 55 85 45 55 90 50 5 7 5 15 7 Unit V V Collector-Base Voltage (*) Collector-Emitter Voltage RBE=100Ω Collector-Emitter Voltage VBE=-1.5V Emitter-Base Voltage V VCEV(SUS) V VEBO IC IB V A A Collector Current Base Current COMSET SEMICONDUCTORS 1/4 2N6253 - 2N6254 - 2N6371 Symbol Ratings < 25°C 2N6253 2N6254 2N6371 2N6253 2N6254 2N6371 2N6253 2N6254 2N6371 Value 115 150 117 Unit Watts PTOT Power Dissipation > 25°C Derate Linearly to 200°C -65 to +200 °C TJ TS Junction Temperature Storage Temperature THERMAL CHARACTERISTICS Symbol RthJ-C Ratings 2N6253 Thermal Resistance, Junction to Case 2N6254 2N6371 Value 1.5 1.17 1.5 Unit °C/W ELECTRICAL CHARACTERISTICS TC=25°C unless otherwise noted Symbol Ratings Test Condition(s) 2N6253 2N6254 2N6371 2N6253 2N6371 2N6254 2N6253 2N6371 2N6254 Min Typ Mx Unit 1 4 0.5 4 1.5 4 1.5 1.0 10 0.5 mA VCE(SAT) IC=3 A, IB=0.3 IC=15 A, IB=5 IC=5 A, IB=0.5 Collector-Emitter Voltage (*) IC=15 A, IB=3 IC=8 A, IB=0.8 IC=16 A, IB=4 V ICEO IEBO Collector-Emitter Cutoff Current VCE=25 V VCE=60 V mA Emitter-Base Cutoff Current VEB=-5 V VEB=-7 V COMSET SEMICONDUCTORS 2/4 2N6253 - 2N6254 - 2N6371 Symbol Ratings Test Condition(s) VCE=40 V VBE=-1.5 V Min Typ Mx Unit 45 80 40 55 85 45 55 90 50 20 3 20 5 15 4 10 800 2.55 1.87 2.9 - 2N6371 2N6253 2N6254 2N6371 2N6253 2N6254 2N6253 2N6254 2N6371 2N6253 2N6254 2N6371 2N6253 2N6254 2N6371 2N6253 2N6254 2N6371 2N6253 2N6254 2N6371 2N6253 2N6254 2N6371 2N6253 2N6254 2N6371 2N6253 2N6254 2N6371 10 10 5.0 2.0 2.0 0.5 1.7 1.5 4 70 70 60 V mA TC=150°C VCE=50 V VBE=-1.5 V VCE=100 V VBE=1.5 V ICEX Collector Cutoff Current VCE=45 V VBE=-1.5 V TC=25°C VCE=55 V VBE=-1.5 V VCE=100 V VBE=1.5 V VCEO(SUS) Collector-Emitter Sustaining IC=0.2 A, IB=0 A Voltage (*) Collector-Emitter Sustaining Voltage (*) IC=0.2 mA RBE=100Ω Base-Emitter Voltage (*) IC=0.1 A, VBE=-1.5 V VCE=4 V, IC=3 A VCE=2 V, IC=5 A VCE=4 V, IC=16 A VCE=4 V, IC=3 A VCE=4 V, IC=15 A VCE=2 V, IC=5 A VCE=4 V, IC=15 A VCE=4 V, IC=8 A VCE=4 V, IC=16 A VCE=4 V, IC=1 A, f=1 kHz V VCER(SUS) VCEV(SUS) VBE - V Base-Emitter Voltage (*) V hFE Static Forward Current transfer ratio (*) - hfe Small Signal Current Gain - fT Is/b Transition Frequency Second Breakdown Collector Current tp=1s, non rep. VCE=4 V, IC=1 A VCE=45 V VCE=40 V kHz A (*) Pulse Width ≈ 300 µs, Duty Cycle ∠ 2.0% COMSET SEMICONDUCTORS 3/4 2N6253 - 2N6254 - 2N6371 MECHANICAL DATA CASE TO-3 DIMENSIONS mm inches A 25,45 1 B 38,8 1,52 C 30,09 1,184 D 17,11 0,67 E 9,78 0,38 G 11,09 0,43 H 8,33 0,32 L 1,62 0,06 M 19,43 0,76 N 1 0,04 P 4,08 0,16 Pin 1 : Pin 2 : Case : Base Emitter Collector Information furnished is believed to be accurate and reliable. However, CS assumes no responsability for the consequences of use of such information nor for errors that could appear. Data are subject to change without notice COMSET SEMICONDUCTORS 4/4