JMnic
Product Specification
Silicon NPN Power Transistors
DESCRIPTION ・With TO-3 package ・Low collector saturation voltage ・High dissipation capability ・Excellent safe operating area APPLICATIONS ・Series and shunt regulators ・High-fidelity amplifiers ・Power-switching circuits
PINNING PIN 1 2 3 Base Emitter Collector DESCRIPTION
2N6371
Fig.1 simplified outline (TO-3) and symbol
Absolute maximum ratings(Ta=℃)
SYMBOL VCBO VCEO VEBO IC IB PD Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Total Power Dissipation Junction temperature Storage temperature TC=25℃ CONDITIONS Open emitter Open base Open collector VALUE 50 40 5 15 7 117 200 -65~200 UNIT V V V A A W ℃ ℃
THERMAL CHARACTERISTICS
SYMBOL Rth j-c PARAMETER Thermal resistance junction to case VALUE 1.5 UNIT ℃/W
JMnic
Product Specification
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP.
2N6371
MAX
UNIT
VCEO(SUS)
Collector-emitter sustaining voltage
IC=0.2A ;IB=0
40
V
VCEsat-1
Collector-emitter saturation voltage
IC=8A ;IB=0.8A
1.5
V
VCEsat-2
Collector-emitter saturation voltage
IC=16A; IB=4A
4.0
V
VBE
Base-emitter on voltage
IC=16A ; VCE=4V
4.0
V
ICEO
Collector cut-off current
VCE=25V; IB=0 VCE=45V;VBE(off)=1.5V VCE=40V;VBE(off)=1.5V;TC=150℃ VEB=5V; IC=0
1.5 2.0 10.0 10
mA
ICEX
Collector cut-off current
mA
IEBO
Emitter cut-off current
mA
hFE-1
DC current gain
IC=8A ; VCE=4V
15
60
hFE-2
DC current gain
IC=16A ; VCE=4V
4
fT
Transition freuqency
IC=1A ; VCE=4V
0.8
MHz
2
JMnic
Product Specification
Silicon NPN Power Transistors
PACKAGE OUTLINE
2N6371
Fig.2 outline dimensions (unindicated tolerance:±0.10mm)
3
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