BCY59

NPN BCY58 – BCY59 SILICON PLANAR EPITAXIAL TRANSISTORS The BCY58 and BCY59 are NPN transistors mounted in TO-18 metal package with the collector connected to the case . They are designed for use in audio drive and low-noise input stages. Compliance to RoHS. ABSOLUTE MAXIMUM RATINGS Symbol VCEO VCES VEBO IC IB PD PD TJ TStg Ratings Collector-Emitter Voltage(1) Collector-Emitter Voltage (VBE =0) Emitter-Base Voltage Collector Current Base Current Total Power Dissipation Total Power Dissipation Junction Temperature Storage Temperature range @ Tamb = 45° @ Tcase= 45° BCY59 BCY58 BCY59 BCY58 BCY59 BCY58 BCY59 BCY58 BCY59 BCY58 BCY59 BCY58 BCY59 BCY58 BCY59 BCY58 BCY59 BCY58 Value 45 32 45 32 7 7 200 50 0.39 1 200 -65 to +150 Unit V V V mA mA mW Watts °C °C (1) Applicable up to IC = 500mA THERMAL CHARACTERISTICS Symbol RthJ-a RthJ-c Ratings Thermal Resistance, Junction to mounting base Thermal Resistance, Junction to ambient in free air BCY59 BCY58 BCY59 BCY58 Value 450 150 Unit °C/W °C/W COMSET SEMICONDUCTORS 1/4 NPN BCY58 – BCY59 ELECTRICAL CHARACTERISTICS Tj=25°C unless otherwise specified Symbol ICES ICES IEBO VCEO VEBO VCE(SAT) Ratings Collector Cutoff Current Collector Cutoff Current Emitter Cutoff Current Test Condition(s) VCB =45 V, VBE =0V VCB =32 V, VB =0V VCB =45 V VBE =0V,Tamb =150°C VCB =32 V VBE =0V,Tamb =150°C VBE =5.0 V, IC =0 Min Typ 0.12 04 0.7 0.85 0.5 0.7 0.76 BCY59IX BCY58IX >40 Typ.190 >250 160 60 >250 60 Typ.300 >380 240 60 >350 120 80 >40 >125 20 Typ.95 >180 120 45 >175