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BD681

BD681

  • 厂商:

    COMSET

  • 封装:

  • 描述:

    BD681 - SILICON DARLINGTON POWER TRANSISTORS - Comset Semiconductor

  • 数据手册
  • 价格&库存
BD681 数据手册
NPN BD675-BD677-BD679-BD681 PNP BD676-BD678-BD680-BD682 SILICON DARLINGTON POWER TRANSISTORS The BD675-BD677-BD679-BD681 are NPN eptaxial-base transistors in monolithic Darlington circuit for audio and video applications. They are mounted in Jedec TO-126 plastic package. PNP complements are BD676-BD678-BD680-BD682 . ABSOLUTE MAXIMUM RATINGS Symbol VCEO Collector-Emitter Voltage Ratings BD675 BD677 BD679 BD681 BD675 BD677 BD679 BD681 IC ICM IBM @ Tmb = 25°C Value 60 80 100 120 60 80 100 120 5 4 6 0.1 40 150 -65 to +150 Unit V VCBO VEBO Collector-Base Voltage Emitter-Base Voltage Collector Current Base current (peak value) Total power Dissipation Junction Temperature Storage Temperature V V A A Watts °C °C IC IB PT TJ TStg THERMAL CHARACTERISTICS Symbol RthJ-mb RthJ-a Ratings Thermal Resistance, Junction to mouting base Thermal Resistance, Junction to ambient in free air Value 3.12 100 Unit K/W K/W COMSET SEMICONDUCTORS 1 NPN BD675-BD677-BD679-BD681 PNP BD676-BD678-BD680-BD682 ELECTRICAL CHARACTERISTICS TC=25°C unless otherwise noted Symbol Ratings Test Condition(s) IE=0 , VCB= VCBOMAX=60 V IE=0 , VCB= VCBOMAX=80 V IE=0 , VCB= VCBOMAX=100 V IE=0 , VCB= VCBOMAX=120 V IE=0 ,VCB=½VCBOMAX= 30V,Tj= 150°C IE=0 ,VCB=½VCBOMAX= 40V,Tj= 150°C IE=0 ,VCB=½VCBOMAX= 50V,Tj= 150°C IE=0 ,VCB=½VCBOMAX= 60V,Tj= 150°C IB=0 , VCE= ½VCEOMAX=30 V IB=0 , VCE= ½VCEOMAX=40 V IB=0 , VCE= ½VCEOMAX=50 V IB=0 , VCE= ½VCEOMAX=60 V IC=0, -VEB=5 V BD675 BD677 BD679 BD681 BD675 BD677 BD679 BD681 BD675 BD677 BD679 BD681 Min Typ 750 10 0,8 2200 1500 60 1,5 0,3 1,5 M Unit x 0,2 0,2 0,2 0,2 1 1 1 1 0,2 0,2 0,2 0,2 5 2,5 2,5 1.5 5 kHz V A µs mA ICBO Collector cut-off current ICEO IEBO VCE(SAT) hFE VBE hfe fhfe VF Collector cut-off current Emitter cut-offcurrent Collector-Emitter saturation Voltage DC Current Gain Base-Emitter Voltage(1&2) Small signal current gain mA mA V IC=1.5 A,-IB=6 Ma (BD675 ; IC=2 A ) VCE=3 V, IC=500 mA VCE=3 V, IC=1,5 A VCE=3 V, IC=4 A VCE=3 V, IC=1,5 A (BD675 ; IC=2 A ) VCE=3 V, IC=1,5 A, f= 1 MHz (BD675 ; IC=2 A ) VCE=3 V, IC=1,5 A (BD675 ; IC=2 A ) IF=1,5 A (BD675 ; IF=2 A ) -VCE=50 V, tP= 20ms,non rep., without heatsink V Ut-off frequency Diode forward voltage Second-breakdown I(SB) collector current Turn-on time ton -Icon= 1,5A, -Ibon= Iboff= 6mA, Turn-off time toff 1. Measured under pulse conditions :tP
BD681 价格&库存

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BD681
    •  国内价格
    • 1+1.78336
    • 10+1.71731
    • 100+1.55878
    • 500+1.47952

    库存:0