BD681

Inchange Semiconductor Product Specification Silicon NPN Power Transistors BD675A/677A/679A/681 DESCRIPTION ・With TO-126 package ・Complement to type BD676A/678A/680A/682 ・DARLINGTON APPLICATIONS ・For medium power linear and switching applications PINNING PIN 1 2 3 Emitter Collector;connected to mounting base Base DESCRIPTION ・ Absolute maximum ratings (Ta=25℃) SYMBOL PARAMETER BD675A BD677A VCBO Collector-base voltage BD679A BD681 BD675A BD677A VCEO Collector-emitter voltage BD679A BD681 VEBO IC ICM IB PC Tj Tstg Emitter -base voltage Collector current Collector current-Peak Base current Collector power dissipation Junction temperature Storage temperature TC=25℃ Open collector Open base 80 100 5 4 6 0.1 40 150 -65~150 V A A A W ℃ ℃ Open emitter 80 100 45 60 V CONDITIONS VALUE 45 60 V UNIT Inchange Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER BD675A Collector-emitter sustaining voltage BD677A IC=50mA; IB=0 BD679A BD681 Collector-emitter saturation voltage BD675A/677A/679A BD681 BD675A/677A/679A BD681 BD675A Collector cut-off current BD677A BD679A BD681 BD675A Collector cut-off current BD677A BD679A BD681 IEBO Emitter cut-off current BD675A/677A/679A hFE DC current gain BD681 IC=2A; IB=40mA BD675A/677A/679A/681 CONDITIONS MIN 45 60 TYP. MAX UNIT VCEO(SUS) V 80 100 2.8 V 2.5 2.5 V 2.5 VCEsat IC=1.5A; IB=30mA IC=2A ; VCE=3V IC=1.5A ; VCE=3V VCB=45V; IE=0 VCB=60V; IE=0 VBE(ON) Base-emitter voltage ICBO 0.2 VCB=80V; IE=0 VCB=100V; IE=0 VCE=45V; VBE=0 VCE=60V; VBE=0 0.5 VCE=80V; VBE=0 VCE=100V; VBE=0 VEB=5V; IC=0 IC=2A ; VCE=3V IC=1.5A ; VCE=3V 750 750 2 mA ICEO mA mA 2 Inchange Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE BD675A/677A/679A/681 Fig.2 Outline dimensions 3