BDW84C

PNP BDW84C PNP SILICON DARLINGTONS POWER TRANSISTORS The BDW84C is silicon epitaxial-base PNPpower monolithic Darlington transistor mounted in Jedec TO-218 plastic package. It is intended for use in power linear and switching applications. The complementary is BDW83C. ABSOLUTE MAXIMUM RATINGS Symbol -VCEO -VCBO -VEBO -I C -ICM -I B Pt TJ TStg Collector-Emitter Voltage Collector- Emitter Voltage Emitter-Base Voltage Collector Current Collector Peak Current Base Current Total Power Dissipation Junction Temperature Storage Temperature Ratings -IB = 0 -IE = 0 -IC = 0 tp = 10ms @ TC = 40° Value 100 100 5 15 40 0.5 130 150 -65 to +150 Unit V V V A A A Watts °C °C THERMAL CHARACTERISTICS Symbol RthJC Ratings Thermal Resistance, Junction to Case Value 0.96 Unit °C/W ELECTRICAL CHARACTERISTICS TC=25°C unless otherwise noted Symbol -VCEO(SUS) -ICEO -ICBO -IEBO hFE -VCE(SAT) -VBE(on) -Vf Ratings Collector-Emitter Sustaining Voltage (1) Collector Cutoff Current Collector Cutoff Current Emitter Cutoff Current DC Current Gain (1) Collector-Emitter saturation Voltage (1) Base-Emitter Voltage (1) Diode Forward Voltage (1) -IC=30 mA Test Condition(s) Min Typ Mx Unit 100 750 100 1 0.5 5 2 20 K 2.5 4 2.5 4 1/2 V mA mA mA V V -VCE=40 V , -IB=0 -VCE= 100V , -IE= 0 -VCE= 100 V , -IE= 0, Tcase = 150°C -VEB=5.0 V, -IC=0 -IC=6 A , -VCE=3.0 V -IC=15 A , -VCE=3.0 V -IC=6 A , -IB=12 mA -IC=15 A , -IB=150 mA -IC=6 A , -IB=3 A -IF = 10A COMSET SEMICONDUCTORS PNP BDW84C Symbol ton toff Ratings Turn-on time Turn-off time Test Condition(s)Sec -IC=10 A , -VCC=30 V -IC=5 A , -VCC=250 V -IB1 = IB2 =40mA Min Typ Mx Unit 0.9 6 µs - (1) Pulse Duration = 300 µs, Duty Cycle