BDY54

. BDY53 – BDY54 NPN SILICON TRANSISTORS, DIFFUSED MESA LF Large Signal Power Amplification High Current Fast Switching ABSOLUTE MAXIMUM RATINGS Symbol VCEO VCBO VEBO IC IB PTOT TJ TStg Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current Base Current Power Dissipation Junction Temperature Storage Temperature @ TC = 25° Ratings BDY53 BDY54 BDY53 BDY54 BDY53 BDY54 BDY53 BDY54 BDY53 BDY54 BDY53 BDY54 BDY53 BDY54 BDY53 BDY54 Value 60 120 100 180 7 12 5 Unit V V V A A Watts °C °C 60 200 -65 to +200 COMSET SEMICONDUCTORS 1/3 BDY53 – BDY54 ELECTRICAL CHARACTERISTICS TC=25°C unless otherwise noted Symbol VCEO(SUS) IEBO Ratings Collector-Emitter Breakdown Voltage (*) Test Condition(s) IC=100 mA, IB=0 Min Typ Mx Unit 60 120 3.0 V mA BDY53 BDY54 BDY53 BDY54 BDY53 BDY54 BDY53 BDY54 BDY53 BDY54 BDY53 BDY54 BDY53 BDY54 BDY53 BDY54 BDY53 BDY54 BDY53 BDY54 BDY53 BDY54 Emitter-Base Cutoff Current VEB=7 V VCE=100 V VBE=-1.5 V TCASE=150°C VCE=150 V VBE=-1.5 V TCASE=150°C IC=4.0 A, IB=0.4 A IC=7.0 A, IB=1.4 A IC=4.0 A, IB=0.4 A ICEX Collector-Emitter Cutoff Current 20 15 1.1 V 2.2 2 V 2.5 60 V mA VCE(SAT) Collector-Emitter saturation Voltage (*) VBE(SAT) Base-Emitter Voltage (*) IC=7.0 A, IB=1.4 A h21E fT Static Forward Current transfer ratio (*) Transition Frequency VCE=1.5 V, IC=2 A VCE=4.0 V, IC=0.5 A, f=10 MHz 20 - - MHz t d + tr Turn-on time IC=5 A, IB=1 A - 0.3 - µs t s + tf Turn-off time IC=5 A, IB1=1 A, IB2=-0.5 A - 1.8 - µs (*) Pulse Width ≈ 300 µs, Duty Cycle ∠ 2.0% COMSET SEMICONDUCTORS 2/3 BDY53 – BDY54 MECHANICAL DATA CASE TO-3 DIMENSIONS A B C D E G H L M N P mm inches 25,45 1 38,8 1,52 30,09 1,184 17,11 0,67 9,78 0,38 11,09 0,43 8,33 0,32 1,62 0,06 19,43 0,76 1 0,04 4,08 0,16 Pin 1 : Pin 2 : Case : Base Emitter Collector COMSET SEMICONDUCTORS 3/3