BDY57

BDY57 – BDY58 NPN SILICON TRANSISTORS, DIFFUSED MESA LF Large Signal Power Amplification High Current Fast Switching ABSOLUTE MAXIMUM RATINGS Symbol VCEO VCBO VEBO IC IB PTOT TJ TS Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current Base Current Power Dissipation Junction Temperature Storage Temperature @ TC = 25° Ratings BDY57 BDY58 BDY57 BDY58 BDY57 BDY58 BDY57 BDY58 BDY57 BDY58 BDY57 BDY58 BDY57 BDY58 Value 80 125 120 160 10 25 6 Unit V V V A A Watts 175 -65 to +200 °C THERMAL CHARACTERISTICS Symbol RthJ-C Ratings Thermal Resistance, Junction to Case BDY57 BDY58 Value 1 Unit °C/W COMSET SEMICONDUCTORS 1/3 BDY57 – BDY58 ELECTRICAL CHARACTERISTICS TC=25°C unless otherwise noted Symbol VCEO(SUS) VCE(SAT) Ratings Collector-Emitter Breakdown Voltage (*) Collector-Emitter saturation Voltage (*) Test Condition(s) IC=100 mA, IB=0 Min Typ Mx Unit 80 125 0.5 1.4 V BDY57 BDY58 BDY57 BDY58 BDY57 IC=10 A, IB=1.0 A V V(BR)CBO Collector-Base Breakdown Voltage (*) 120 160 - V - IC=5.0mA, IE=0 BDY58 V(BR)EBO Emitter-Base Breakdown Voltage (*) IE=5.0 A, IC=0 BDY57 BDY58 - 0.5 1.4 V ICBO Collector-Base Cutoff Current Collector-Emitter Cutoff Current VCB=120 V IE=0 V VCE=80 V RBE=10 Ω TCASE=100°C V =10 V BDY57 BDY58 BDY57 BDY58 BDY57 BDY58 BDY57 BDY58 BDY57 BDY58 BDY57 BDY58 BDY57 BDY58 BDY57 BDY58 1.0 0.5 0.5 10 mA ICER - - mA IEBO Emitter-Base Cutoff Current I EB V C=0 20 10 10 0.25 15 30 0.5 60 - mA VCE=4 V, IC=10 A h21E Static Forward Current transfer ratio (*) VCE=4 V, IC=20 A VCE=4 V, IC=10 A, TCASE=30°C V fT Transition Frequency VCE=15 V, IC=1.0 A, f=10 MHz MHz t d + tr Turn-on time IC=15 A, IB=1.5 A - 0.25 1 µs COMSET SEMICONDUCTORS 2/3 BDY57 – BDY58 Symbol t s + tf Ratings Turn-off time IC=15 A, IB1=1.5 A, IB2=-1.5 A Test Condition(s) BDY57 BDY58 Min Typ Mx Unit 1 2 µs (*) Pulse Width ≈ 300 µs, Duty Cycle ∠ 2.0% MECHANICAL DATA CASE TO-3 DIMENSIONS A B C D E G H L M N P Pin 1 : Pin 2 : Case : mm inches 25,45 1 38,8 1,52 30,09 1,184 17,11 0,67 9,78 0,38 11,09 0,43 8,33 0,32 1,62 0,06 19,43 0,76 1 0,04 4,08 0,16 Base Emitter Collector COMSET SEMICONDUCTORS 3/3