CBC3150-D9C

EnerChip™ CC CBC3150 EnerChip CC with Integrated Power Management Features • • • • • • • • • • • Power Manager with Charge Control Integrated 50µAh Thin Film Energy Storage Built-in Energy Storage Protection Temperature Compensated Charge Control Adjustable Switchover Voltage Charges Integrated EnerChip Over a Wide Supply Range Low Standby Power SMT - Lead-Free Reflow Tolerant Thousands of Recharge Cycles Low Self-Discharge Eco-Friendly, RoHS Compliant 9 mm x 9 mm DFN SMT Package Applications The EnerChip CC is the world’s first Intelligent Thin Film Energy Storage Device. It is an integrated solution that provides backup energy storage and power management for systems requiring power bridging and/or secondary power. A single EnerChip CC can charge up to 10 additional EnerChips connected in parallel. During normal operation, the EnerChip CC charges itself with a controlled voltage using an internal charge pump that operates from 2.5V to 5.5V. An ENABLE pin allows for activation and deactivation of the charge pump using an external control line in order to minimize current consumption and take advantage of the fast recharge time of the EnerChip. When the primary power supply dips below a userdefined threshold voltage, the EnerChip CC will signal this event and route the EnerChip voltage to VOUT. The EnerChip CC also has energy storage protection circuitry to enable thousands of recharge cycles. The CBC3150 is a 20-pin, 9 mm x 9 mm Dual Flat Nolead (DFN) package, available in tubes, trays, or tapeand-reel for use with automatic insertion equipment. • Standby supply for non-volatile SRAM, Real-time clocks, controllers, supply supervisors, and other system-critical components. • Wireless sensors and RFID tags and other powered, low duty cycle applications. • Localized power source to keep microcontrollers and other devices alert in standby mode. • Power bridging to provide back-up power to system during exchange of main batteries. • Consumer appliances that have real-time clocks; provides switchover power from main supply to integrated backup energy storage. • Business and industrial systems such as: network routers, point-of-sale terminals, singleboard computers, test equipment, multi-function printers, industrial controllers, and utility meters. • Energy Harvesting by coupling the EnerChip with energy transducers such as solar panels. Figure 1 - Typical EnerChip CC Application Circuit DS-72-03 Rev C ©2009-2010 Cymbet Corporation • Tel: +1-763-633-1780 • www.cymbet.com Page 1 of 15 EnerChip CC CBC3150 Electrical Properties EnerChip Backup Output voltage: Energy Capacity (typical): Recharge time to 80%: Charge/Discharge cycles: 3.3V 50µAh 20 minutes >5000 to 10% discharge Physical Properties Package size: Operating temperature: Storage temperature: 9 mm x 9 mm -20°C to +70°C -40°C to +125°C Functional Block Diagram The EnerChip CC internal schematic is shown in Figure 2. The input voltage from the power supply (VDD) is applied to the charge pump, the control logic, and is compared to the user-set threshold as determined by the voltage on VMODE. VMODE is an analog input ranging from 0V to VDD. The ENABLE pin is a digital input that turns off the charge pump when low. VOUT is either supplied from VDD or the integrated EnerChip energy storage device. RESET is a digital output that, when low, indicates VOUT is being sourced by the integrated EnerChip. CFLY is the flying capacitor in the voltage doubler circuit. The value of CFLY can be changed if the output impedance of the EnerChip CC needs to be modified. The output impedance is dictated by 1/fC, where f is the frequency of oscillation (typically 100kHz) and C is the capacitor value (typically 0.1µF). GND is system ground. Figure 2: EnerChip CC CBC3150 Internal Block Diagram DS-72-03 Rev C ©2009-2010 Cymbet Corporation • Tel: +1-763-633-1780 • www.cymbet.com Page 2 of 15 EnerChip CC CBC3150 Device Input/Ouput Descriptions Pin Number 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 Label VBAT VOUT VDD VCHG ENABLE VMODE GND RESET CP CN NC NC NC GND NC NC NC NC NC NC Description Positive EnerChip Terminal - Tie to Pin 4 System Voltage Input Voltage EnerChip Charge Voltage - Tie to Pin 1 and/or Optional EnerChip(s) Charge Pump Enable Mode Select for Backup Switchover Threshold System Ground Reset Signal (Active Low) Flying Capacitor Positive Flying Capacitor Negative No Connection No Connection No Connection System Ground No Connection No Connection No Connection No Connection No Connection No Connection NC NC NC VCHG ENABLE NC NC NC GND RESET CP CN NC NC NC Figure 3: EnerChip CC CBC3150 Package Pin-out DS-72-03 Rev C ©2009-2010 Cymbet Corporation • Tel: +1-763-633-1780 • www.cymbet.com Page 3 of 15 EnerChip CC CBC3150 Absolute Maximum Ratings PARAMETER VDD with respect to GND ENABLE and VMODE Input Voltage VBAT VOUT RESET Output Voltage CP, Flying Capacitor Voltage CN (1) (1) CONDITION 25°C 25°C 25°C 25°C 25°C 25°C 25°C 25°C MIN GND - 0.3 GND - 0.3 3.0 3.0 GND-0.3 GND - 0.3 GND - 0.3 GND - 0.3 TYPICAL - MAX 6.0 VDD+0.3 4.3 4.3 6.0 VOUT+0.3 6.0 VDD+0.3 UNITS V V V V V V V V VCHG (1) No external connections to these pins are allowed, except parallel EnerChips. Operating Characteristics PARAMETER Output Voltage VOUT Output Voltage VOUT (backup mode) EnerChip Pulse Discharge Current Self-Discharge (5 yr average) Operating Temperature Storage Temperature Cell Resistance (25°C) Recharge Cycles (to 80% of rated capacity; 4.1 V charge voltage) 25°C 40°C CONDITION VDD > VTH VDD < VTH MIN 2.2 -20 -40 5000 1000 2500 500 50 TYPICAL VDD 3.3 2.5 1.5 (1) 25 0.75 4.2 20 60 - MAX 3.6 +70 +125 2 7 35 95 (2) UNITS V V % per year % per year °C °C kΩ cycles cycles cycles cycles minutes µAh Non-recoverable Recoverable Variable - see App. Note 1025 Charge cycle 2 Charge cycle 1000 10% depth-of-discharge 50% depth-of discharge 10% depth-of-discharge 50% depth-of-discharge Charge cycle 2 Charge cycle 1000 100µA discharge; 25°C Recharge Time (to 80% of rated capacity; 4.1V charge voltage; 25°C) Capacity (1) (2) First month recoverable self-discharge is 4% average. Storage temperature is for uncharged EnerChip CC device. Note: All specifications contained within this document are subject to change without notice. EnerChip Discharge Characteristics DS-72-03 Rev C ©2009-2010 Cymbet Corporation • Tel: +1-763-633-1780 • www.cymbet.com Page 4 of 15 EnerChip CC CBC3150 POWER SUPPLY CURRENT CHARACTERISTICS Ta = -20ºC to +70ºC CHARACTERISTIC Quiescent Current SYMBOL IQ CONDITION ENABLE=GND ENABLE=VDD VDD=3.3V VDD=5.5V VDD=3.3V VDD=5.5V MIN - MAX 3.5 6.0 35 38 0.5 42 UNITS µA µA µA µA nA nA IQBATOFF EnerChip Cutoff Current IQBATON VBAT < VBATCO, VOUT=0 VBAT > VBATCO, ENABLE=VDD, IOUT=0 INTERFACE LOGIC SIGNAL CHARACTERISTICS VDD = 2.5v to 5.5v, Ta = -20ºC to +70ºC CHARACTERISTIC High Level Input Voltage Low Level Input Voltage High Level Output Voltage Low Level Output Voltage Logic Input Leakage Current (1) SYMBOL VIH VIL VOH VOL IIN CONDITION VDD>VTH (see Figures 4 and 5) IL=10µA IL = -100µA 0