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CYW255OXCT

CYW255OXCT

  • 厂商:

    CYPRESS(赛普拉斯)

  • 封装:

  • 描述:

    CYW255OXCT - 200-MHz 24-Output Buffer for 4 DDR or 3 SDRAM DIMMS - Cypress Semiconductor

  • 数据手册
  • 价格&库存
CYW255OXCT 数据手册
W255 200-MHz 24-Output Buffer for 4 DDR or 3 SDRAM DIMMS Features • One input to 24-output buffer/driver • Supports up to 4 DDR DIMMs or 3 SDRAM DIMMS • One additional output for feedback • SMBus interface for individual output control • Low skew outputs (< 100 ps) • Supports 266-, 333-, and 400-MHz DDR SDRAM • Dedicated pin for power management support • Space-saving 48-pin SSOP package Functional Description The W255 is a 3.3V/2.5V buffer designed to distribute high-speed clocks in PC applications. The part has 24 outputs. Designers can configure these outputs to support four unbuffered DDR DIMMS or to support three unbuffered standard SDRAM DIMMs and two DDR DIMMS. The W255 can be used in conjunction with the W250 or similar clock synthesizer for the VIA Pro 266 chipset. The W255 also includes an SMBus interface which can enable or disable each output clock. On power-up, all output clocks are enabled (internal pull up). Block Diagram FBOUT BUF_IN DDR0T_SDRAM10 DDR0C_SDRAM11 DDR1T_SDRAM0 DDR1C_SDRAM1 DDR2T_SDRAM2 DDR2C_SDRAM3 DDR3T_SDRAM4 DDR3C_SDRAM5 DDR4T_SDRAM6 DDR4C_SDRAM7 DDR5T_SDRAM8 DDR5C_SDRAM9 DDR6T DDR6C DDR7T DDR7C DDR8T DDR8C DDR9T DDR9C DDR10T PWR_DWN# Power Down Control Pin Configuration[1] SSOP Top View FBOUT VDD3.3_2.5 GND DDR0T_SDRAM10 DDR0C_SDRAM11 DRR1T_SDRAM0 DDR1C_SDRAM1 VDD3.3_2.5 GND DDR2T_SDRAM2 DDR2C_SDRAM3 VDD3.3_2.5 BUF_IN GND DDR3T_SDRAM4 DDR3C_SDRAM5 VDD3.3_2.5 GND DDR4T_SDRAM6 DDR4C_SDRAM7 DDR5T_SDRAM8 DDR5C_SDRAM9 VDD3.3_2.5 SDATA 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 48 47 46 45 44 43 42 41 40 39 38 37 36 35 34 33 32 31 30 29 28 27 26 25 SDATA SMBus Decoding SCLOCK DDR10C DDR11T SEL_DDR* VDD2.5 GND DDR11T DDR11C DDR10T DDR10C VDD2.5 GND DDR9T DDR9C VDD2.5 PWR_DWN#* GND DDR8T DDR8C VDD2.5 GND DDR7T DDR7C DDR6T DDR6C GND SCLK SEL_DDR DDR11C Note: 1. Internal 100K pull-up resistors present on inputs marked with *. Design should not rely solely on internal pull-up resistor to set I/O pins HIGH. Cypress Semiconductor Corporation Document #: 38-07255 Rev. *D • 3901 North First Street • San Jose, CA 95134 • 408-943-2600 Revised April 28, 2005 W255 Pin Summary Pin Name SEL_DDR Pins 48 Pin Description Input to configure for DDR-ONLY mode or STANDARD SDRAM mode. 1 = DDR-ONLY mode. 0 = STANDARD SDRAM mode. When SEL_DDR is pulled HIGH or configured for DDR-ONLY mode, pin 4, 5, 6, 7, 10, 11,15, 16, 19, 20, 21, 22, 27, 28, 29, 30, 33, 34, 38, 39, 42, 43, 44 and 45 will be configured as DDR outputs. Connect VDD3.3_2.5 to a 2.5V power supply in DDR-ONLY mode. When SEL_DDR is pulled LOW or configured for STANDARD SDRAM output, pin 4, 5, 6, 7, 10, 11, 15, 16, 19 and 20, 21, 22 will be configured as STANDARD SDRAM outputs.Pin 27, 28, 29, 30, 33, 34, 38, 39, 42, 43, 44 and 45 will be configured as DDR outputs. Connect VDD3.3_2.5 to a 3.3V power supply in STANDARD SDRAM mode. SCLK SDATA BUF_IN FBOUT PWR_DWN# DDR[6:11]T DDR[6:11]C DDR[0:5]T_SDRAM [10,0,2,4,6,8] 25 24 13 1 36 28, 30, 34, 39, 43, 45 27, 29, 33, 38, 42, 44 4, 6, 10, 15, 19, 21 SMBus clock input SMBus data input Reference input from chipset. 2.5V input for DDR-ONLY mode; 3.3V input for STANDARD SDRAM mode. Feedback clock for chipset. Output voltage depends on VDD3.3_2.5V. Active LOW input to enable power-down mode; all outputs will be pulled LOW. Clock outputs. These outputs provide copies of BUF_IN. Clock outputs. These outputs provide complementary copies of BUF_IN. Clock outputs. These outputs provide copies of BUF_IN. Voltage swing depends on VDD3.3_2.5 power supply. Clock outputs. These outputs provide complementary copies of BUF_IN when SEL_DDR is active. These outputs provide copies of BUF_IN when SEL_DDR is inactive. Voltage swing depends on VDD3.3_2.5 power supply. Connect to 2.5V power supply when W255 is configured for DDR-ONLY mode. Connect to 3.3V power supply, when W255 is configured for standard SDRAM mode. 2.5V voltage supply DDR[0:5]C_SDRAM 5, 7, 11, 16, 20, 22 [11,1,3,5,7,9] VDD3.3_2.5 2, 8, 12, 17, 23 VDD2.5 GND 32, 37, 41, 47 3, 9, 14, 18, 26, 31, 35, 40, 46 Ground Document #: 38-07255 Rev. *D Page 2 of 10 W255 Serial Configuration Map • The serial bits will be read by the clock driver in the following order: Byte 0 - Bits 7, 6, 5, 4, 3, 2, 1, 0 Byte 1 - Bits 7, 6, 5, 4, 3, 2, 1, 0 . . Byte N - Bits 7, 6, 5, 4, 3, 2, 1, 0 • Reserved and unused bits should be programmed to “0.” • SMBus Address for the W255 is: A6 1 A5 1 A4 0 A3 1 A2 0 A1 0 A0 1 R/W ---- Byte 7: Outputs Active/Inactive Register (1 = Active, 0 = Inactive), Default = Active Bit Bit 7 Bit 6 Bit 5 Bit 4 Bit 3 Bit 2 Bit 1 Bit 0 Pin # 30, 29 28, 27 21, 22 19, 20 15,16 10, 11 6, 7 4, 5 Description DDR7T, DDR7C DDR6T, DDR6C DDR5T_SDRAM8, DDR5C_SDRAM9 DDR4T_SDRAM6, DDR4C_SDRAM7 DDR3T_SDRAM4, DDR3C_SDRAM5 DDR2T_SDRAM2, DDR2C_SDRAM3 DDR1T_SDRAM0, DDR1C_SDRAM1 DDR0T_SDRAM10, DDR0C_SDRAM11 1 1 1 1 1 1 1 1 Default Byte 6: Outputs Active/Inactive Register (1 = Active, 0 = Inactive), Default = Active Bit Pin # Description Reserved, drive to 0 Reserved, drive to 0 Reserved, drive to 0 FBOUT DDR11T, DDR11C Default 0 0 0 1 1 1 1 1 Bit 7 – Bit 6 – Bit 5 – Bit 4 1 Bit 3 45,44 Bit 2 43, 42 DDR10T, DDR10C Bit 1 39, 38 DDR9T, DDR9C Bit 0 34, 33 DDR8T, DDR8C Document #: 38-07255 Rev. *D Page 3 of 10 W255 Maximum Ratings Supply Voltage to Ground Potential ..................–0.5 to +7.0V DC Input Voltage (except BUF_IN) ............ –0.5V to VDD+0.5 Storage Temperature .................................. –65°C to +150°C Static Discharge Voltage........................................... > 2000V (per MIL-STD-883, Method 3015) Operating Conditions[2] Parameter VDD3.3 VDD2.5 TA COUT CIN Supply Voltage Supply Voltage Operating Temperature (Ambient Temperature) Output Capacitance Input Capacitance Description Min. 3.135 2.375 0 6 5 Typ. Max. 3.465 2.625 70 Unit V V °C pF pF Electrical Characteristics Over the Operating Range Parameter VIL VIH IIL IIH IOH IOL VOL VOH IDD IDD IDDS VOUT VOC INDC Description Input LOW Voltage Input HIGH Voltage Input LOW Current Input HIGH Current Output HIGH Current Output LOW Current Output LOW Voltage[3] Output HIGH Voltage[3] Supply Current[3] (DDR-only mode) Supply Current (DDR-only mode) Supply Current Output Voltage Swing Output Crossing Voltage Input Clock Duty Cycle [4] Test Conditions For all pins except SMBus Min. 2.0 Typ. Max. 0.8 50 50 Unit V V µA µA mA mA VIN = 0V VIN = VDD VDD = 2.375V VOUT = 1V VDD = 2.375V VOUT = 1.2V IOL = 12 mA, VDD = 2.375V IOH = –12 mA, VDD = 2.375V Unloaded outputs, 133 MHz Loaded outputs, 133 MHz PWR_DWN# = 0 See test circuity (refer to Figure 1) 0.7 (VDD/2) – 0.1 48 VDD/2 1.7 –18 26 –32 35 0.6 400 500 100 VDD +0.6 (VDD/2) + 0.1 52 V V mA mA µA V V % Switching Characteristics Parameter – – t3 t4 t3d Duty Cycle Name Operating Frequency [3, 5] Test Conditions Measured at 1.4V for 3.3V outputs Measured at VDD/2 for 2.5V outputs Measured between 0.4V and 2.4V Measured between 2.4V and 0.4V Measured between 20% to 80% of output (refer to Figure 1) Min. 66 INDC – 5% 1.0 1.0 0.5 Typ. Max. 200 INDC + 5% 2.75 2.75 1.50 Unit MHz % V/ns V/ns V/ns = t2 ÷ t1 SDRAM Rising Edge Rate[3] SDRAM Falling Edge Rate[3] DDR Rising Edge Rate[3] Notes: 2. Multiple Supplies: The voltage on any input or I/O pin cannot exceed the power pin during power-up. Power supply sequencing is NOT required. 3. Parameter is guaranteed by design and characterization. Not 100% tested in production. 4. All parameters specified with loaded outputs. 5. Duty cycle of input clock is 50%. Rising and falling edge rate is greater than 1 V/ns. Document #: 38-07255 Rev. *D Page 4 of 10 W255 Switching Characteristics (continued)[4] Parameter t4d t5 t6 t7 t8 Name DDR Falling Edge Rate[3] Test Conditions Measured between 20% to 80% of output (refer to Figure 1) All outputs equally loaded Input edge greater than 1 V/ns Input edge greater than 1 V/ns 5 5 Min. 0.5 Typ. Max. 1.50 100 150 10 10 Unit V/ns ps ps ns ns Output to Output Skew for DDR[3] All outputs equally loaded Output to Output Skew for SDRAM[3] SDRAM Buffer LH Prop. Delay[3] SDRAM Buffer HL Prop. Delay[3] Switching Waveforms Duty Cycle Timing t1 t2 All Outputs Rise/Fall Time 2.4V 0.4V t3 2.4V 0.4V t4 3.3V 0V OUTPUT Output-Output Skew OUTPUT OUTPUT t5 SDRAM Buffer HH and LL Propagation Delay 1.5V INPUT OUTPUT t6 1.5V t7 Document #: 38-07255 Rev. *D Page 5 of 10 W255 Figure 1 shows the differential clock directly terminated by a 120Ω resistor. VCC Device Under Test VCC Out ) ) 60W VTR RT =120Ω Out 60W VCP Receiver Figure 1. Differential Signal Using Direct Termination Resistor Ordering Information Ordering Code W255H W255HT Lead-free CYW255OXC CYW255OXCT 48-pin SSOP 48-pin SSOP–Tape and Reel Option Commercial Commercial 48-pin SSOP 48-pin SSOP–Tape and Reel Option Package Type Operating Range Commercial Commercial Document #: 38-07255 Rev. *D Page 6 of 10 W255 Layout Example for DDR 2.5V Only +2.5V Supply FB VDDQ2 C4 0.005 mF 10 mF C3 G G G G G G G 1G 2V 3G 4 5 6 7G 8V 9G 10 11 G 12 V G 13 14 15 16 G 17 V 18 G 19 20 21 22 G 23 V 24 G G 48 47 G 46 45 44 43 G 42 V 41 G 40 39 G 38 V 37 G 36 G 35 34 G 33 V 32 G 31 30 29 28 27 G 26 25 V G G FB = Dale ILB1206 - 300 (300Ω @ 100 MHz) or TDK ACB 2012L-120 Ceramic Caps C3 = 10–22 µF G = VIA to GND plane layer C4 = 0.005 µF V = VIA to respective supply plane layer Note: Each supply plane or strip should have a ferrite bead and capacitors All bypass caps = 0.1 µF ceramic W255 G G Document #: 38-07255 Rev. *D Page 7 of 10 W255 Layout Example SDRAM (Mixed Voltage) +3.3V Supply FB VDDQ3 VDDQ2 +2.5V Supply FB 10 mF C4 0.005 mF C3 C1 10 mF 0.005 mf C2 G G G G G G G G G 1 2V G 3 4 5 6 7G 8V 9 10 11 G 12V G 13 14 G 15 16 G 17V 18 G 19 20 21 22 23V 24 G G 48 47 46 45 44 43 G 42 V 41 G 40 39 G 38 V 37 G 36 G 35 34 G 33 V 32 G 31 30 29 28 27 G 26 25 G V G G FB = Dale ILB1206 - 300 (300Ω @ 100 MHz) or TDK ACB 2012L-120 Ceramic Caps C1 and C3 = 10–22 µFC2 & C4 = 0.005 µF C6 = 0.1 µF G = VIA to GND plane layer V = VIA to respective supply plane layer Note: Each supply plane or strip should have a ferrite bead and capacitors All bypass caps = 0.1 µF ceramic W255 G G Document #: 38-07255 Rev. *D Page 8 of 10 W255 Package Diagram 48-lead Shrunk Small Outline Package O48 51-85061-*C VIA is a trademark of VIA Technologies, Inc. All product and company names mentioned in this document are the trademarks of their respective holders. Document #: 38-07255 Rev. *D Page 9 of 10 © Cypress Semiconductor Corporation, 2005. The information contained herein is subject to change without notice. Cypress Semiconductor Corporation assumes no responsibility for the use of any circuitry other than circuitry embodied in a Cypress product. Nor does it convey or imply any license under patent or other rights. Cypress products are not warranted nor intended to be used for medical, life support, life saving, critical control or safety applications, unless pursuant to an express written agreement with Cypress. Furthermore, Cypress does not authorize its products for use as critical components in life-support systems where a malfunction or failure may reasonably be expected to result in significant injury to the user. The inclusion of Cypress products in life-support systems application implies that the manufacturer assumes all risk of such use and in doing so indemnifies Cypress against all charges. W255 Document History Page Document Title: W255 200MHz 24 Output Buffer for 4 DDR or 3 SDRAM DIMMs Document Number: 38-07255 REV. ** *A *B *C *D ECN NO. 110520 112154 114554 122857 358457 Issue Date 12/04/01 03/01/02 05/07/02 12/14/02 See ECN Orig. of Change SZV IKA INA RBI RGL Description of Change Change from Spec number: 38-01082 to 38-07255 Added 333 MHz for DDR SDRAM Added 400 MHz for DDR SDRAM Power up requirements added to Operating Conditions Information Added Lead-free devices Document #: 38-07255 Rev. *D Page 10 of 10
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