BTB1188M3_06

CYStech Electronics Corp. Low Vcesat PNP Epitaxial Planar Transistor Spec. No. : C812M3 Issued Date : 2003.05.25 Revised Date : 2006.02.15 Page No. : 1/5 BTB1188M3 Features • Low VCE(sat), VCE(sat)=-0.45 V (typical), at IC / IB = -2A / -0.5A • Excellent current gain characteristics • Complementary to BTD1766M3 • Pb-free package Symbol BTB1188M3 Outline SOT-89 B：Base C：Collector E：Emitter BCE Absolute Maximum Ratings (Ta=25°C) Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current (DC) Collector Current (Pulse) Power Dissipation Power Dissipation Junction Temperature Storage Temperature Note : 1. Single Pulse , Pw=10ms BTB1188M3 Symbol VCBO VCEO VEBO IC ICP Pd Pd Tj Tstg Limits -40 -30 -5 -2 -5 (Note 1) 0.5 2 (Note 2) 150 -55~+150 Unit V V V A A W W °C °C 2. When mounting on a 40 ×40 ×0.7 mm ceramic board. CYStek Product Specification CYStech Electronics Corp. Characteristics (Ta=25°C) Symbol BVCBO BVCEO BVEBO ICBO IEBO *VCE(sat) *hFE fT Cob Min. -40 -30 -5 82 Typ. 100 50 Max. -1 -1 -1 560 Unit V V V µA µA V MHz pF Spec. No. : C812M3 Issued Date : 2003.05.25 Revised Date : 2006.02.15 Page No. : 2/5 Test Conditions IC=-50µA, IE=0 IC=-1mA, IB=0 IE=-50µA, IC=0 VCB=-20V, IE=0 VEB=-4V, IC=0 IC=-3A, IB=-0.1A VCE=-3V, IC=-0.5A VCE=-5V, IC=-0.1A, f=100MHz VCB=-10V, f =1MHz *Pulse Test : Pulse Width ≤380µs, Duty Cycle≤2% Classification Of hFE Rank Range P 82~180 Q 120~270 R 180~390 S 270~560 Ordering Information Device BTB1188M3 Package SOT-89 (Pb-free) Shipping 1000 pcs / Tape & Reel Marking AE BTB1188M3 CYStek Product Specification CYStech Electronics Corp. Characteristic Curves Current Gain vs Collector Current 1000 Spec. No. : C812M3 Issued Date : 2003.05.25 Revised Date : 2006.02.15 Page No. : 3/5 Saturation Voltage vs Collector Current 10000 Saturation Voltage---(mV) VCE=5V Current Gain---HFE 1000 VCESAT@IC=40IB 100 VCE=2V VCE=1V 100 10 VCESAT=20IB VCESAT=10IB 10 1 10 100 1000 10000 Collector Current---IC(mA) 1 1 10 100 1000 10000 Collector Current---IC(mA) Saturation Voltage vs Collector Current 10000 2.5 Power Derating Curves Power Dissipation---PD(W) Saturation Voltage---(mV) 2 1.5 1 0.5 0 See note 2 on page 1 VBESAT@IC=10IB 1000 100 1 10 100 1000 Collector Current---IC(mA) 10000 0 50 100 150 200 Ambient Temperature---TA(℃) BTB1188M3 CYStek Product Specification CYStech Electronics Corp. Reel Dimension Spec. No. : C812M3 Issued Date : 2003.05.25 Revised Date : 2006.02.15 Page No. : 4/5 Carrier Tape Dimension BTB1188M3 CYStek Product Specification CYStech Electronics Corp. SOT-89 Dimension A Spec. No. : C812M3 Issued Date : 2003.05.25 Revised Date : 2006.02.15 Page No. : 5/5 Marking: 1 2 C 3 H AE B D Style: Pin 1. Base 2. Collector 3. Emitter E F G I 3-Lead SOT-89 Plastic Surface Mounted Package CYStek Package Code: M3 *: Typical DIM A B C D E Inches Min. Max. 0.1732 0.1811 0.1594 0.1673 0.0591 0.0663 0.0945 0.1024 0.01417 0.0201 Millimeters Min. Max. 4.40 4.60 4.05 4.25 1.50 1.70 2.40 2.60 0.36 0.51 DIM F G H I Inches Min. Max. 0.0583 0.0598 0.1165 0.1197 0.0551 0.0630 0.0138 0.0161 Millimeters Min. Max. 1.48 1.527 2.96 3.04 1.40 1.60 0.35 0.41 Notes: 1.Controlling dimension: millimeters. 2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material. 3.If there is any question with packing specification or packing method, please contact your local CYStek sales office. Material: • Lead: 42 Alloy ; solder plating • Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0 Important Notice: • All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek. • CYStek reserves the right to make changes to its products without notice. • CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems. • CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. BTB1188M3 CYStek Product Specification