MTDK1S6R

CYStech Electronics Corp. N-CHANNEL MOSFET (dual transistors) Spec. No. : C320S6R-A Issued Date : 2007.12.23 Revised Date :2008.01.25 Page No. : 1/ 7 MTDK1S6R Features • Low on-resistance • High ESD capability • High speed switching • Low-voltage drive(2.5V) • Easily designed drive circuits • Easy to use in parallel • Pb-free package Equivalent Circuit MTDK1S6R Outline SOT-363R Tr1 Tr2 The following characteristics apply to both Tr1 and Tr2 Absolute Maximum Ratings (Ta=25°C) Parameter Symbol Limits Unit Drain-Source Voltage Gate-Source Voltage Drain Current Drain Reverse Current Power Dissipation Continuous Pulsed Continuous Pulsed VDSS VGSS ID IDP IDR IDRP Pd Tj Tstg 60 ±20 200 700 200 700 1250 150 -55~+150 (Note 1) (Note 1) (Note 3) V V mA mA mA mA mW 300(total) (Note 2) ESD susceptibility Junction Temperature Storage Temperature Note : 1. Pulse test, pulse width≤300μs, duty≤2% 2. 200mW per element must not be exceeded. V °C °C 3. Human body model, 1.5kΩ in series with 100pF MTDK1S6R CYStek Product Specification CYStech Electronics Corp. Electrical Characteristics (Ta=25°C) Symbol Min. Typ. Max. BVDSS* 60 VGS(th) 1 2.5 IGSS ±10 IDSS 1 6.4 13 8.6 15 RDS(ON)* 4.0 12 4.5 6 3.0 4.5 GFS 30 60 Ciss 7.32 Coss 3.42 Crss 7.63 - Spec. No. : C320S6R-A Issued Date : 2007.12.23 Revised Date :2008.01.25 Page No. : 2/ 7 Unit V V μA μA Ω mS pF Test Conditions VGS=0, ID=10μA VDS=VGS, ID=250μA VGS=±20V, VDS=0 VDS=60V, VGS=0 ID=1mA, VGS=2.5V ID=50mA, VGS=2.5V ID=10mA, VGS=4V ID=200mA, VGS=4V ID=200mA, VGS=10V VDS=3V, ID=10mA VDS=10V, VGS=0, f=1MHz *Pulse Test : Pulse Width ≤300μs, Duty Cycle≤2% Ordering Information Device MTDK1S6R Package SOT-363 (Pb-free) Shipping 3000 pcs / Tape & Reel Marking 72 MTDK1S6R CYStek Product Specification CYStech Electronics Corp. Characteristic Curves Typical Output Characteristics 0.3 4V 0.25 Drain Current - ID(A) 0.2 0.15 0.1 0.05 VGS=2.2V 0 0 1 2 3 Drain-Source Voltage -VDS(V) Static Drain-Source On-State resistance vs Drain Current 4 3V 6V 3.5V Spec. No. : C320S6R-A Issued Date : 2007.12.23 Revised Date :2008.01.25 Page No. : 3/ 7 Typical Transfer Characteristics 0.3 0.25 Drain Current -ID(A) 0.2 0.15 0.1 0.05 0 0 1 2 3 Gate-Source Voltage-VGS(V) Static Drain-Source On-State resistance vs Drain Current VDS=10V 4 100 Static Drain-Source On-State Resistance-RDS(on)(Ω) 10 Static Drain-Source On-State Resistance-RDS(on)(Ω) VGS=5V VGS=2.5V 10 VGS=10V VGS=4V 1 0.001 0.01 0.1 Drain Current-ID(A) 1 1 0.001 0.01 0.1 1 Drain Current-ID(A) Static Drain-Source On-State Resistance vs Gate-Source Voltage Reverse Drain Current vs Source-Drain Voltage 10 Source-Drain Voltage-VSD(V) 7 Static Drain-Source On-State Resistance-RDS(ON)(Ω) 6 5 4 3 2 1 0 0 5 10 15 20 Gate-Source Voltage-VGS(V) 25 ID=50mA ID=150mA 1 0.1 0.01 0.001 0 0.2 0.4 0.6 0.8 Reverse Drain Current -IDR(A) 1 MTDK1S6R CYStek Product Specification CYStech Electronics Corp. Characteristic Curves (Cont.) Capacitance vs Drain-to-Source Voltage 100 Power Dissipation---PD(mW) 350 300 Dual Spec. No. : C320S6R-A Issued Date : 2007.12.23 Revised Date :2008.01.25 Page No. : 4/ 7 Power Derating Curve Capacitance---(pF) 250 200 150 100 50 0 Single 10 Crss Ciss C oss 1 0.1 1 10 Drain-Source Voltage -VDS(V) 100 0 50 100 150 Ambient Temperature---TA(℃) 200 MTDK1S6R CYStek Product Specification CYStech Electronics Corp. Reel Dimension Spec. No. : C320S6R-A Issued Date : 2007.12.23 Revised Date :2008.01.25 Page No. : 5/ 7 Carrier Tape Dimension MTDK1S6R CYStek Product Specification CYStech Electronics Corp. Recommended wave soldering condition Product Pb-free devices Peak Temperature 260 +0/-5 °C Spec. No. : C320S6R-A Issued Date : 2007.12.23 Revised Date :2008.01.25 Page No. : 6/ 7 Soldering Time 5 +1/-1 seconds Recommended temperature profile for IR reflow Profile feature Average ramp-up rate (Tsmax to Tp) Preheat −Temperature Min(TS min) −Temperature Max(TS max) −Time(ts min to ts max) Time maintained above: −Temperature (TL) − Time (tL) Peak Temperature(TP) Time within 5°C of actual peak temperature(tp) Ramp down rate Time 25 °C to peak temperature Sn-Pb eutectic Assembly 3°C/second max. 100°C 150°C 60-120 seconds 183°C 60-150 seconds 240 +0/-5 °C 10-30 seconds 6°C/second max. 6 minutes max. Pb-free Assembly 3°C/second max. 150°C 200°C 60-180 seconds 217°C 60-150 seconds 260 +0/-5 °C 20-40 seconds 6°C/second max. 8 minutes max. Note : All temperatures refer to topside of the package, measured on the package body surface. MTDK1S6R CYStek Product Specification CYStech Electronics Corp. SOT-363 Dimension Spec. No. : C320S6R-A Issued Date : 2007.12.23 Revised Date :2008.01.25 Page No. : 7/ 7 Style: Pin 1. Source1 (S1) Pin 2. Gate1 (G1) Pin 3. Drain2 (D2) Pin 4. Source2 (S2) Pin 5. Gate2 (G2) Pin 6. Drain1 (D1) Marking: 72 6-Lead SOT-363 Plastic Surface Mounted Package CYStek Package Code: S6R *:Typical DIM A B C D G H Inches Min. Max. 0.071 0.087 0.045 0.053 0.031 0.043 0.004 0.012 0.026BSC 0.004 Millimeters Min. Max. 1.8 2.2 1.15 1.35 0.8 1.1 0.1 0.3 0.65BSC 0.1 DIM J K N S Y Inches Min. Max. 0.004 0.010 0.004 0.012 0.008 REF 0.079 0.087 0.012 0.016 Millimeters Min. Max. 0.1 0.25 0.1 0.30 0.20 REF 2.00 2.40 0.30 0.40 Notes : 1.Controlling dimension : millimeters. 2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material. 3.If there is any question with packing specification or packing method, please contact your local CYStek sales office. Material : • Lead : 42 Alloy ; pure tin plated • Mold Compound : Epoxy resin family, flammability solid burning class:UL94V-0 Important Notice: • All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek. • CYStek reserves the right to make changes to its products without notice. • CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems. • CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. MTDK1S6R CYStek Product Specification