MTDK3S6R

CYStech Electronics Corp. ESD protected N-CHANNEL MOSFET Spec. No. : C447S6R Issued Date : 2009.06.03 Revised Date : Page No. : 1/6 MTDK3S6R Description • Low voltage drive, 1.8V • Easy to use in parallel • High speed switching • ESD protected device • Pb-free package BVDSS ID RDSON 20V 100mA 3Ω Symbol MTDK3S6R Outline SOT-363 Tr1 Tr 2 The following characteristics apply to both Tr1 and Tr2 Absolute Maximum Ratings (Ta=25°C) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current (Ta=25°C) Total Power Dissipation ESD susceptibility Operating Junction and Storage Temperature Range Thermal Resistance, Junction-to-Ambient Note : *1. Pulse Width ≤ 300μs, Duty cycle ≤2% *2. 200mW per element must not be exceeded *3. Human body model, 1.5kΩ in series with 100pF Symbol BVDSS VGS ID IDM PD Tj Rth,ja Limits 20 ±8 100 400 *1 300 *2 350 *3 -55~+150 415 Unit V V mA mA mW V °C °C/W MTDK3S6R CYStek Product Specification CYStech Electronics Corp. Electrical Characteristics (Ta=25°C) Symbol Static BVDSS VGS(th) IGSS IDSS RDS(ON) Min. 20 0.5 100 Typ. 1.7 3.5 Max. 1.0 ±1 500 3 6 50 25 5 1 Unit V V μA nA Ω mS Spec. No. : C447S6R Issued Date : 2009.06.03 Revised Date : Page No. : 2/6 Test Conditions VGS=0, ID=100μA VDS=VGS, ID=250μA VGS=±8V, VDS=0 VDS=20V, VGS=0 VGS=4.5V, ID=100mA VGS=1.8V, ID=20mA VDS=5V, ID=100mA GFS Dynamic Ciss Coss Crss Source-Drain Diode *VSD - pF VDS=10V, VGS=0, f=1MHz V VGS=0V, IS=10mA *Pulse Test : Pulse Width ≤300μs, Duty Cycle≤2% Ordering Information Device MTDK3S6R Package SOT-363 (Pb-free) Shipping 3000 pcs / Tape & Reel Marking KG Characteristic Curves Typical Output Characteristics 0.7 0.6 Drain Current - ID(A) 0.5 0.4 0.3 0.2 0.1 0 0 1 2 3 Drain-Source Voltage -VDS(V) 4 2.0V 1.8V VGS=1.5V 5V 4.5V Typical Transfer Characteristics 0.8 0.7 Drain Current -ID(A) 0.6 0.5 0.4 0.3 0.2 0.1 0 0 1 2 3 4 Gate-Source Voltage-VGS(V) 5 6 4.0V 3.5V 3V 2.5V VDS=3V MTDK3S6R CYStek Product Specification CYStech Electronics Corp. Characteristic Curves(Cont.) Static Drain-Source On-State resistance vs Drain Current Spec. No. : C447S6R Issued Date : 2009.06.03 Revised Date : Page No. : 3/6 Static Drain-Source On-State Resistance vs Gate-Source Voltage 10 Static Drain-Source On-State Resistance-RDS(on)(Ω) Static Drain-Source On-State Resistance-RDS(ON)(Ω) 7 6 5 4 3 2 1 0 ID=20mA ID=100mA VGS=1.8V VGS=4.5V 1 0.001 0.01 0.1 Drain Current-ID(A) 1 0 2 4 6 8 Gate-Source Voltage-VGS(V) 10 R everse Drain Current vs Source-Drain Voltage 1 Source-Drain Voltage-VSD(V) 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0 0.1 0.2 0.3 Reverse Drain Current -IDR(A) Power Derating Curves 350 Power Dissipation---PD(mW) 300 Dual Capacitance vs Drain-to-Source Voltage 100 Ciss Capacitance---(pF) C oss 10 Crss 1 0.4 0.1 1 10 Drain-Source Voltage -VDS(V) 100 250 200 150 100 50 0 0 50 100 150 Ambient Temperature---TA(℃) 200 Single MTDK3S6R CYStek Product Specification CYStech Electronics Corp. Reel Dimension Spec. No. : C447S6R Issued Date : 2009.06.03 Revised Date : Page No. : 4/6 Carrier Tape Dimension MTDK3S6R CYStek Product Specification CYStech Electronics Corp. Recommended wave soldering condition Product Pb-free devices Peak Temperature 260 +0/-5 °C Spec. No. : C447S6R Issued Date : 2009.06.03 Revised Date : Page No. : 5/6 Soldering Time 5 +1/-1 seconds Recommended temperature profile for IR reflow Note : All temperatures refer to topside of the package, measured on the package body surface. Profile feature Average ramp-up rate (Tsmax to Tp) Preheat −Temperature Min(TS min) −Temperature Max(TS max) −Time(ts min to ts max) Time maintained above: −Temperature (TL) − Time (tL) Peak Temperature(TP) Time within 5°C of actual peak temperature(tp) Ramp down rate Time 25 °C to peak temperature Sn-Pb eutectic Assembly 3°C/second max. 100°C 150°C 60-120 seconds 183°C 60-150 seconds 240 +0/-5 °C 10-30 seconds 6°C/second max. 6 minutes max. Pb-free Assembly 3°C/second max. 150°C 200°C 60-180 seconds 217°C 60-150 seconds 260 +0/-5 °C 20-40 seconds 6°C/second max. 8 minutes max. MTDK3S6R CYStek Product Specification CYStech Electronics Corp. SOT-363 Dimension Spec. No. : C447S6R Issued Date : 2009.06.03 Revised Date : Page No. : 6/6 Style: Pin 1. Source1 (S1) Pin 2. Gate1 (G1) Pin 3. Drain2 (D2) Pin 4. Source2 (S2) Pin 5. Gate2 (G2) Pin 6. Drain1 (D1) Marking: KG 6-Lead SOT-363 Plastic Surface Mounted Package CYStek Package Code: S6R *:Typical DIM A B C D G H Inches Min. Max. 0.071 0.087 0.045 0.053 0.031 0.043 0.004 0.012 0.026BSC 0.004 Millimeters Min. Max. 1.8 2.2 1.15 1.35 0.8 1.1 0.1 0.3 0.65BSC 0.1 DIM J K N S Y Inches Min. Max. 0.004 0.010 0.004 0.012 0.008 REF 0.079 0.087 0.012 0.016 Millimeters Min. Max. 0.1 0.25 0.1 0.30 0.20 REF 2.00 2.40 0.30 0.40 Notes : 1.Controlling dimension : millimeters. 2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material. 3.If there is any question with packing specification or packing method, please contact your local CYStek sales office. Material : • Lead : 42 Alloy ; pure tin plating • Mold Compound : Epoxy resin family, flammability solid burning class:UL94V-0 Important Notice: • All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek. • CYStek reserves the right to make changes to its products without notice. • CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems. • CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. MTDK3S6R CYStek Product Specification