MTDN7002ZHS6R

CYStech Electronics Corp. N-CHANNEL MOSFET (dual transistors) Spec. No. : C320S6R Issued Date : 2007.11.07 Revised Date : Page No. : 1/ 7 MTDN7002ZHS6R Features • Low on-resistance • High ESD capability • High speed switching • Low-voltage drive(4V) • Easily designed drive circuits • Easy to use in parallel • Pb-free package Equivalent Circuit MTDN7002ZHS6R Outline SOT-363R Tr1 Tr2 The following characteristics apply to both Tr1 and Tr2 Absolute Maximum Ratings (Ta=25°C) Parameter Symbol Limits Unit Drain-Source Voltage Gate-Source Voltage Drain Current Drain Reverse Current Power Dissipation Continuous Pulsed Continuous Pulsed VDSS VGSS ID IDP IDR IDRP Pd Tj Tstg 60 ±20 115 700 115 700 1250 150 -55~+150 (Note 1) (Note 1) (Note 3) V V mA mA mA mA mW 300(total) (Note 2) ESD susceptibility Junction Temperature Storage Temperature Note : 1. Pulse test, pulse width≤300μs, duty≤2% 2. 200mW per element must not be exceeded. V °C °C 3. Human body model, 1.5kΩ in series with 100pF MTDN7002ZHS6R CYStek Product Specification CYStech Electronics Corp. Electrical Characteristics (Ta=25°C) Symbol Min. Typ. Max. BVDSS* 60 VGS(th) 1 2.5 IGSS ±10 IDSS 1 3.6 5.5 RDS(ON)* 3 5 GFS 100 Ciss 7.32 Coss 3.42 Crss 7.63 - Spec. No. : C320S6R Issued Date : 2007.11.07 Revised Date : Page No. : 2/ 7 Unit V V μA μA Ω mS pF Test Conditions VGS=0, ID=10μA VDS=VGS, ID=250μA VGS=±20V, VDS=0 VDS=60V, VGS=0 ID=100mA, VGS=5V ID=100mA, VGS=10V VDS=10V, ID=100mA VDS=10V, VGS=0, f=1MHz *Pulse Test : Pulse Width ≤300μs, Duty Cycle≤2% Ordering Information Device MTDN7002ZHS6R Package SOT-363 (Pb-free) Shipping 3000 pcs / Tape & Reel Marking 72 MTDN7002ZHS6R CYStek Product Specification CYStech Electronics Corp. Characteristic Curves Typical Output Characteristics 0.3 4V 0.25 Drain Current - ID(A) 0.2 0.15 0.1 0.05 VGS=2.2V 0 0 1 2 3 Drain-Source Voltage -VDS(V) Static Drain-Source On-State resistance vs Drain Current 4 3V 6V 3.5V Spec. No. : C320S6R Issued Date : 2007.11.07 Revised Date : Page No. : 3/ 7 Typical Transfer Characteristics 0.3 0.25 Drain Current -ID(A) 0.2 0.15 0.1 0.05 0 0 1 2 3 Gate-Source Voltage-VGS(V) Static Drain-Source On-State resistance vs Drain Current VDS=10V 4 10 Static Drain-Source On-State Resistance-RDS(on)(Ω) VGS=5V 10 Static Drain-Source On-State Resistance-RDS(on)(Ω) VGS=10V 1 0.01 0.1 Drain Current-ID(A) 1 1 0.01 0.1 Drain Current-ID(A) 1 Static Drain-Source On-State Resistance vs Gate-Source Voltage Reverse Drain Current vs Source-Drain Voltage 10 Source-Drain Voltage-VSD(V) 7 Static Drain-Source On-State Resistance-RDS(ON)(Ω) 6 5 4 3 2 1 0 0 5 10 15 20 Gate-Source Voltage-VGS(V) 25 ID=50mA ID=100mA 1 0.1 0.01 0.001 0 0.2 0.4 0.6 0.8 Reverse Drain Current -IDR(A) 1 MTDN7002ZHS6R CYStek Product Specification CYStech Electronics Corp. Capacitance vs Drain-to-Source Voltage 100 350 Power Dissipation---PD(mW) 300 250 200 150 100 50 0 0 50 100 Spec. No. : C320S6R Issued Date : 2007.11.07 Revised Date : Page No. : 4/ 7 Power Derating Curves dual Capacitance---(pF) single 10 Crss Ciss C oss 1 0.1 1 10 Drain-Source Voltage -VDS(V) 100 150 200 Ambient Temperature --- Ta(℃ ) MTDN7002ZHS6R CYStek Product Specification CYStech Electronics Corp. Reel Dimension Spec. No. : C320S6R Issued Date : 2007.11.07 Revised Date : Page No. : 5/ 7 Carrier Tape Dimension MTDN7002ZHS6R CYStek Product Specification CYStech Electronics Corp. SOT-363R Dimension Spec. No. : C320S6R Issued Date : 2007.11.07 Revised Date : Page No. : 6/ 7 Style: Pin 1. Source1 (S1) Pin 2. Gate1 (G1) Pin 3. Drain2 (D2) Pin 4. Source2 (S2) Pin 5. Gate2 (G2) Pin 6. Drain1 (D1) Marking: 72 6-Lead SOT-363R Plastic Surface Mounted Package CYStek Package Code: S6R *:Typical DIM A B C D G H Inches Min. Max. 0.071 0.087 0.045 0.053 0.031 0.043 0.004 0.012 0.026BSC 0.004 Millimeters Min. Max. 1.8 2.2 1.15 1.35 0.8 1.1 0.1 0.3 0.65BSC 0.1 DIM J K N S Y Inches Min. Max. 0.004 0.010 0.004 0.012 0.008 REF 0.079 0.087 0.012 0.016 Millimeters Min. Max. 0.1 0.25 0.1 0.30 0.20 REF 2.00 2.40 0.30 0.40 Notes : 1.Controlling dimension : millimeters. 2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material. 3.If there is any question with packing specification or packing method, please contact your local CYStek sales office. Material : • Lead : 42 Alloy ; solder plating • Mold Compound : Epoxy resin family, flammability solid burning class:UL94V-0 Recommended wave soldering condition Product Pb-free devices Peak Temperature 260 +0/-5 °C Soldering Time 5 +1/-1 seconds MTDN7002ZHS6R CYStek Product Specification CYStech Electronics Corp. Recommended temperature profile for IR reflow Spec. No. : C320S6R Issued Date : 2007.11.07 Revised Date : Page No. : 7/ 7 Profile feature Average ramp-up rate (Tsmax to Tp) Preheat −Temperature Min(TS min) −Temperature Max(TS max) −Time(ts min to ts max) Time maintained above: −Temperature (TL) − Time (tL) Peak Temperature(TP) Time within 5°C of actual peak temperature(tp) Ramp down rate Time 25 °C to peak temperature Sn-Pb eutectic Assembly 3°C/second max. 100°C 150°C 60-120 seconds 183°C 60-150 seconds 240 +0/-5 °C 10-30 seconds 6°C/second max. 6 minutes max. Pb-free Assembly 3°C/second max. 150°C 200°C 60-180 seconds 217°C 60-150 seconds 260 +0/-5 °C 20-40 seconds 6°C/second max. 8 minutes max. Note : All temperatures refer to topside of the package, measured on the package body surface. Important Notice: • All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek. • CYStek reserves the right to make changes to its products without notice. • CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems. • CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. MTDN7002ZHS6R CYStek Product Specification