MTN7002ZHS3

CYStech Electronics Corp. N-CHANNEL MOSFET Spec. No. : C320S3 Issued Date : 2007.11.06 Revised Date : 2008.01.25 Page No. : 1/7 MTN7002ZHS3 Description The MTN7002ZHS3 is a N-channel enhancement-mode MOSFET. Features • Low on-resistance • High ESD • High speed switching • Low-voltage drive(4V) • Easily designed drive circuits • Easy to use in parallel • Pb-free package Symbol MTN7002ZHS3 D Outline SOT-323 D G G S S G：Gate S：Source D：Drain MTN7002ZHS3 CYStek Product Specification CYStech Electronics Corp. Absolute Maximum Ratings (Ta=25°C) Parameter Drain-Source Voltage Gate-Source Voltage Drain Current Drain Reverse Current Total Power Dissipation ESD susceptibility Channel Temperature Storage Temperature Continuous Pulsed Continuous Pulsed Spec. No. : C320S3 Issued Date : 2007.11.06 Revised Date : 2008.01.25 Page No. : 2/7 Symbol VDSS VGSS ID IDP IDR IDRP PD TCH Tstg Limits 60 ±20 115 700 *1 115 700 *1 200 *2 1250 *3 +150 -55~+150 Unit V V mA mA mA mA mW V °C °C Note : *1. Pulse Width ≤ 300μs, Duty cycle ≤2% *2. When the device is mounted on a glass epoxy board with area measuring 1×0.75×0.62 inch *3. Human body model, 1.5kΩ in series with 100pF Electrical Characteristics (Ta=25°C) Symbol Min. Typ. Max. BVDSS* 60 VGS(th) 1 2.5 IGSS ±10 IDSS 1 3.6 5.5 RDS(ON)* 3 5 GFS 100 Ciss 7.32 Coss 3.42 Crss 7.63 - Unit V V μA μA Ω mS pF Test Conditions VGS=0, ID=10μA VDS=VGS, ID=250μA VGS=±20V, VDS=0 VDS=60V, VGS=0 ID=100mA, VGS=5V ID=100mA, VGS=10V VDS=10V, ID=100mA VDS=10V, VGS=0, f=1MHz *Pulse Test : Pulse Width ≤380μs, Duty Cycle≤2% Ordering Information Device MTN7002ZHS3 Package SOT-323 (Pb-free) Shipping 3000 pcs / Tape & Reel Marking 72 MTN7002ZHS3 CYStek Product Specification CYStech Electronics Corp. Characteristic Curves Typical Output Characteristics 0.3 4V 0.25 Drain Current - ID(A) 0.2 0.15 0.1 0.05 VGS=2.2V 0 0 1 2 3 Drain-Source Voltage -VDS(V) 4 3V 6V 3.5V Spec. No. : C320S3 Issued Date : 2007.11.06 Revised Date : 2008.01.25 Page No. : 3/7 Typical Transfer Characteristics 0.3 0.25 Drain Current -ID(A) 0.2 0.15 0.1 0.05 0 0 1 2 3 Gate-Source Voltage-VGS(V) 4 VDS=10V Static Drain-Source On-State resistance vs Drain Current Static Drain-Source On-State resistance vs Drain Current 10 Static Drain-Source On-State Resistance-RDS(on)(Ω) VGS=5V 10 Static Drain-Source On-State Resistance-RDS(on)(Ω) VGS=10V 1 0.01 0.1 Drain Current-ID(A) 1 1 0.01 0.1 Drain Current-ID(A) 1 Static Drain-Source On-State Resistance vs Gate-Source Voltage R everse Drain Current vs Source-Drain Voltage 10 Source-Drain Voltage-VSD(V) 7 Static Drain-Source On-State Resistance-RDS(ON)(Ω) 6 5 4 3 2 1 0 0 5 10 15 20 Gate-Source Voltage-VGS(V) 25 ID=50mA ID=100mA 1 0.1 0.01 0.001 0 0.2 0.4 0.6 0.8 Reverse Drain Current -IDR(A) 1 MTN7002ZHS3 CYStek Product Specification CYStech Electronics Corp. Characteristic Curves(Cont.) Capacitance vs Drain-to-Source Voltage 100 Power Dissipation---PD(mW) 250 200 150 100 50 0 Spec. No. : C320S3 Issued Date : 2007.11.06 Revised Date : 2008.01.25 Page No. : 4/7 Power Derating Curve Capacitance---(pF) 10 Crss Ciss C oss 1 0.1 1 10 Drain-Source Voltage -VDS(V) 100 0 50 100 150 Ambient Temperature---TA(℃) 200 MTN7002ZHS3 CYStek Product Specification CYStech Electronics Corp. Reel Dimension Spec. No. : C320S3 Issued Date : 2007.11.06 Revised Date : 2008.01.25 Page No. : 5/7 Carrier Tape Dimension MTN7002ZHS3 CYStek Product Specification CYStech Electronics Corp. SOT-323 Dimension Spec. No. : C320S3 Issued Date : 2007.11.06 Revised Date : 2008.01.25 Page No. : 6/7 3 A Marking: A1 Q Lp detail Z W B C 1 e1 e D bp 2 TE 72 E A Z θ He 0 1 scale 2 mm 3-Lead SOT-323 Plastic Surface Mounted Package CYStek Package Code: S3 v A Style: Pin 1.Gate 2.Source 3.Drain *: Typical DIM A A1 bp C D E e Inches Min. Max. 0.0315 0.0433 0.0000 0.0039 0.0118 0.0157 0.0039 0.0098 0.0709 0.0866 0.0453 0.0531 0.0512 - Millimeters Min. Max. 0.80 1.10 0.00 0.10 0.30 0.40 0.10 0.25 1.80 2.20 1.15 1.35 1.3 - DIM e1 He Lp Q v w θ Inches Min. Max. 0.0256 0.0787 0.0886 0.0059 0.0177 0.0051 0.0091 0.0079 0.0079 - Millimeters Min. Max. 0.65 2.00 2.25 0.15 0.45 0.13 0.23 0.2 0.2 10° 0° Notes: 1.Controlling dimension: millimeters. 2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material. 3.If there is any question with packing specification or packing method, please contact your local CYStek sales office. Material: • Lead: 42 Alloy ; solder plating • Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0 Recommended wave soldering condition Product Pb-free devices Peak Temperature 260 +0/-5 °C Soldering Time 5 +1/-1 seconds MTN7002ZHS3 CYStek Product Specification CYStech Electronics Corp. Recommended temperature profile for IR reflow Spec. No. : C320S3 Issued Date : 2007.11.06 Revised Date : 2008.01.25 Page No. : 7/7 Profile feature Average ramp-up rate (Tsmax to Tp) Preheat −Temperature Min(TS min) −Temperature Max(TS max) −Time(ts min to ts max) Time maintained above: −Temperature (TL) − Time (tL) Peak Temperature(TP) Time within 5°C of actual peak temperature(tp) Ramp down rate Time 25 °C to peak temperature Sn-Pb eutectic Assembly 3°C/second max. 100°C 150°C 60-120 seconds 183°C 60-150 seconds 240 +0/-5 °C 10-30 seconds 6°C/second max. 6 minutes max. Pb-free Assembly 3°C/second max. 150°C 200°C 60-180 seconds 217°C 60-150 seconds 260 +0/-5 °C 20-40 seconds 6°C/second max. 8 minutes max. Note : All temperatures refer to topside of the package, measured on the package body surface. Important Notice: • All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek. • CYStek reserves the right to make changes to its products without notice. • CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems. • CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. MTN7002ZHS3 CYStek Product Specification No.:T1091 ESD RELIABILITY TEST REPORT TEST REPORT Company Model Name Date Received Date Tested ：Cystech Electronics Corp ：MTN7002ZHS3 ：2007.11.06 ：2007.11.08 TESTING LABORATORY IS ACCREDITED BY: IEC/IECQ 17025 certificate of independent test laboratory approval Certificate No.：T1091 ISO 17025 accredited in respect of laboratory is approved by TAF Certificate No.：L0835-060321 ISO 9001 certificate is approved by TUV CERT certification body of TUV NORD Cert GmbH WE HEREBY CERTIFY THAT: The test(s) shown in the attachment were conducted according to the indicating procedures. We assume full responsibility for the accuracy and completeness of these tests and vouch for the qualifications of all personnel performing them. Name Test Engineer Jay Fang Signature Date 2007/11/06 2007/11/08 Section Manager Note： Kosa Lin 1. This report will be invalid if reproduced in whole or in part. 2. This report refers only to the specimen(s) submitted to test, and is invalid if used separately. 3. This report is ONLY valid with the examination seal and signature of this institute. 4. The tested specimen(s) will only be preserved for thirty days from the date issued, if not collected by the applicant. Integrated Service Technology Inc. Reliability Engineering Division 1F, No.19, Pu-ding Rd., Hsin - chu City, Taiwan, R.O.C. Tel: 886-3-578-2266, Fax: 886-3-5634868 http://www.istgroup.com No.:T1091 Report No.：HS0711060098A Report No.：RAC9603789-E Page 1 of 3 ESD RELIABILITY TEST REPORT Applicant/Department: Cystech Electronics Corp Product Testing Item Test Method Failure Criteria Test Voltage : MTN7002ZHS3 : ESD-HBM Package/Pin Count: SOP-3 : MIL-STD-883G Method 3015.7 : FOR V CHANGE AT 1μA ±30% : 2500V ~8000V (±), Step：250V (±) Integrated Service Technology Inc. Reliability Engineering Division 1F, No.19, Pu-ding Rd., Hsin - chu City, Taiwan, R.O.C. Tel: 886-3-578-2266, Fax: 886-3-5634868 http://www.istgroup.com No.:T1091 Report No.：HS0711060098A Report No.：RAC9603789-E Page 2 of 3 ESD-HBM Testing Report Test Equipment: KEYTEK ZAPMASTER #10-6098 Environmental Condition of Laboratory: Temperature: 25ºC±5ºC Humidity: 55%±10% RH Test Condition: D,S – G (+) D,S – G (-) G,S – D (+) G,S – D (-) D,G – S (+) D,G – S (-) Test Result: MODEL: HBM PIN COMBINATION ESD SENSITIVITY PASS : ±1250V SAMPLE PASSED VOLTS SIZE V CLASS: 1C NOTE: FOR EIAJ TEST NO CLASSIFICATION CLASS 0: < 250V CLASS 1A: 250V TO 499V CLASS 1B: 500V TO 999V CLASS 1C: 1000V TO 1999V CLASS 2: 2000V TO 3999V CLASS 3A: 4000V TO 7999V CLASS 3B: ≧ 8000V D,S – G (+) D,S – G (-) G,S – D (+) G,S – D (-) D,G – S (+) D,G – S (-) D:3 G:1 1 1 1 1 1 1 +1250V -1500V +1250V -1250V +1250V -1250V S:2 Integrated Service Technology Inc. Reliability Engineering Division 1F, No.19, Pu-ding Rd., Hsin - chu City, Taiwan, R.O.C. Tel: 886-3-578-2266, Fax: 886-3-5634868 http://www.istgroup.com No.:T1091 Report No.：HS0711060098A Report No.：RAC9603789-E Page 3 of 3 D,S – G (+) Test Pin FAIL VOLTAGE (UNIT: V) #1 1500 2000 D,S – G (-) (UNIT: V) 2 3 Test Pin FAIL VOLTAGE #1 -1750 -3500 G,S – D (+) (UNIT: V) 2 3 Test Pin FAIL VOLTAGE #1 1500 PASS G,S – D (-) (UNIT: V) 1 2 Test Pin FAIL VOLTAGE #1 -1500 -1500 D,G – S (+) (UNIT: V) 1 2 Test Pin FAIL VOLTAGE #1 1500 8000 D,G – S (-) (UNIT: V) 1 3 Test Pin FAIL VOLTAGE #1 -1500 PASS 1 3