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MTN7002ZN3

MTN7002ZN3

  • 厂商:

    CYSTEKEC(全宇昕)

  • 封装:

  • 描述:

    MTN7002ZN3 - N-CHANNEL MOSFET - Cystech Electonics Corp.

  • 数据手册
  • 价格&库存
MTN7002ZN3 数据手册
CYStech Electronics Corp. N-CHANNEL MOSFET Spec. No. : C403N3 Issued Date : 2006.05.22 Revised Date :2008.09.22 Page No. : 1/7 MTN7002ZN3 Description The MTN7002ZN3 is a N-channel enhancement-mode MOSFET. Features • Low on-resistance • High ESD • High speed switching • Low-voltage drive(4V) • Easily designed drive circuits • Easy to use in parallel • Pb-free package Symbol MTN7002ZN3 D Outline SOT-23 D G G S S G:Gate S:Source D:Drain Ordering Information Device MTN7002ZN3 Package SOT-23 (Pb-free) Shipping 3000 pcs / Tape & Reel Marking 702● MTN7002ZN3 CYStek Product Specification CYStech Electronics Corp. Absolute Maximum Ratings (Ta=25°C) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current *1, 2 Spec. No. : C403N3 Issued Date : 2006.05.22 Revised Date :2008.09.22 Page No. : 2/7 Symbol VDSS VGSS ID IDM PD Rth,j-a TJ Tstg TA=25°C@VGS=10V TA=70°C@VGS=10V Total Power Dissipation Linear Derating Factor Thermal Resistance, Junction to Ambient ESD susceptibility Operating Junction Temperature Range Storage Temperature Range Limits 60 ±20 640 500 950 1.38 0.01 90 2000 -55~+150 -55~+150 *1 *2 *2 *3 Unit V V mA mA mA mW W/°C °C/W V °C °C Note : *1. Pulse Width ≤ 300μs, Duty cycle ≤2% *2. When the device is mounted on 1in² copper pad of FR-4 board; 270°C/W when mounted on minimum copper pad. *3. Human body model, 1.5kΩ in series with 100pF Electrical Characteristics (Ta=25°C) Symbol Min. Typ. Max. BVDSS* 60 BVDSS/ΔTj 0.06 VGS(th) 1 2.5 IGSS ±10 1 IDSS 100 1.8 2 RDS(ON)* 1.25 4 VSD 1.2 GFS 600 Ciss 32 50 Coss 8 Crss 6 Qg 1 Qgs 0.5 Qgd 0.5 td(on) 12 tr 10 td(off) 56 tf 29 - Unit V V/℃ V μA μA Ω V mS pF Test Conditions VGS=0, ID=250μA Reference to 25℃, ID=1mA VDS=VGS, ID=250μA VGS=±20V, VDS=0 VDS=60V, VGS=0 VDS=48V, VGS=0, Tj=70℃ ID=200mA, VGS=4.5V ID=500mA, VGS=10V IS=1.2A, VGS=0V VDS=10V, ID=600mA VDS=25V, VGS=0, f=1MHz nC ID=600mA, VDS=50V, VGS=4.5V VDS=30V, ID=600mA, RG=3.3Ω, VGS=10V, RD=52Ω *Pulse Test : Pulse Width ≤300μs, Duty Cycle≤2% ns MTN7002ZN3 CYStek Product Specification CYStech Electronics Corp. Characteristic Curves Typical Output Characteristics 1.2 1 Drain Current - ID(A) 0.8 0.6 0.4 3V 6V 4V Spec. No. : C403N3 Issued Date : 2006.05.22 Revised Date :2008.09.22 Page No. : 3/7 Typical Transfer Characteristics 0.7 0.6 Drain Current -ID(A) 0.5 0.4 0.3 0.2 0.1 VGS=2.2V VDS=10V 3.5V 0.2 0 0 1 2 3 Drain-Source Voltage -VDS(V) 4 0 0 1 2 3 Gate-Source Voltage-VGS(V) 4 Static Drain-Source On-State resistance vs Drain Current Static Drain-Source On-State resistance vs Drain Current 10 Static Drain-Source On-State Resistance-RDS(on)(Ω) 10 Static Drain-Source On-State Resistance-RDS(on)(Ω) VGS=4V 1 1 VGS=4V VGS=10V 0.1 0.01 0.1 Drain Current-ID(A) 1 0.1 0.01 0.1 Drain Current-ID(A) 1 Static Drain-Source On-State Resistance vs Gate-Source Voltage Reverse Drain Current vs Source-Drain Voltage 10 Reverse Drain Current -IDR(A) 7 Static Drain-Source On-State Resistance-RDS(ON)(Ω) 6 5 4 3 2 1 0 0 5 10 15 20 Gate-Source Voltage-VGS(V) 25 150mA ID=300mA 1 0.1 0.01 VGS=0V 0.001 0 0.2 0.4 0.6 0.8 Source-Drain Voltage-VSD(V) 1 MTN7002ZN3 CYStek Product Specification CYStech Electronics Corp. Characteristic Curves(Cont.) R everse Drain Current vs Source-Drain Voltage 10 Spec. No. : C403N3 Issued Date : 2006.05.22 Revised Date :2008.09.22 Page No. : 4/7 Power Derating Curve 250 Reverse Drain Current -IDR(A) 1 VGS=0V Power Dissipation---PD(mW) 200 150 100 50 0 0.1 VGS=10V 0.01 0.001 0 0.2 0.4 0.6 0.8 Source-Drain Voltage-VSD(V) 1 0 50 100 150 Ambient Temperature---TA(℃) 200 MTN7002ZN3 CYStek Product Specification CYStech Electronics Corp. Reel Dimension Spec. No. : C403N3 Issued Date : 2006.05.22 Revised Date :2008.09.22 Page No. : 5/7 Carrier Tape Dimension MTN7002ZN3 CYStek Product Specification CYStech Electronics Corp. Recommended wave soldering condition Product Pb-free devices Peak Temperature 260 +0/-5 °C Spec. No. : C403N3 Issued Date : 2006.05.22 Revised Date :2008.09.22 Page No. : 6/7 Soldering Time 5 +1/-1 seconds Recommended temperature profile for IR reflow Profile feature Average ramp-up rate (Tsmax to Tp) Preheat −Temperature Min(TS min) −Temperature Max(TS max) −Time(ts min to ts max) Time maintained above: −Temperature (TL) − Time (tL) Peak Temperature(TP) Time within 5°C of actual peak temperature(tp) Ramp down rate Time 25 °C to peak temperature Sn-Pb eutectic Assembly 3°C/second max. 100°C 150°C 60-120 seconds 183°C 60-150 seconds 240 +0/-5 °C 10-30 seconds 6°C/second max. 6 minutes max. Pb-free Assembly 3°C/second max. 150°C 200°C 60-180 seconds 217°C 60-150 seconds 260 +0/-5 °C 20-40 seconds 6°C/second max. 8 minutes max. Note : All temperatures refer to topside of the package, measured on the package body surface. MTN7002ZN3 CYStek Product Specification CYStech Electronics Corp. SOT-23 Dimension Spec. No. : C403N3 Issued Date : 2006.05.22 Revised Date :2008.09.22 Page No. : 7/7 A L 3 B 1 2 S Marking: Device Code TE 702● V G 3-Lead SOT-23 Plastic Surface Mounted Package CYStek Package Code: N3 Style: Pin 1.Gate 2.Source 3.Drain C D K H J *: Typical DIM A B C D G H Inches Min. Max. 0.1102 0.1204 0.0472 0.0630 0.0335 0.0512 0.0118 0.0197 0.0669 0.0910 0.0005 0.0040 Millimeters Min. Max. 2.80 3.04 1.20 1.60 0.89 1.30 0.30 0.50 1.70 2.30 0.013 0.10 DIM J K L S V Inches Min. Max. 0.0034 0.0070 0.0128 0.0266 0.0335 0.0453 0.0830 0.1083 0.0098 0.0256 Millimeters Min. Max. 0.085 0.177 0.32 0.67 0.85 1.15 2.10 2.75 0.25 0.65 Notes: 1.Controlling dimension: millimeters. 2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material. 3.If there is any question with packing specification or packing method, please contact your local CYStek sales office. Material: • Lead: 42 Alloy ; solder plating • Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0 Important Notice: • All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek. • CYStek reserves the right to make changes to its products without notice. • CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems. • CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. MTN7002ZN3 CYStek Product Specification
MTN7002ZN3 价格&库存

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