MTN2N60FP

CYStech Electronics Corp. N-Channel Enhancement Mode Power MOSFET Spec. No. : C435FP Issued Date : 2009.01.19 Revised Date : Page No. : 1/8 MTN2N60FP Description BVDSS : 650V @Tj=150℃ RDS(ON) : 4.7Ω I D : 2A The MTN2N60FP is a N-channel enhancement-mode MOSFET, providing the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness. The TO-220FP package is universally preferred for all commercial-industrial applications Features • BVDSS=650V typically @ Tj=150℃ • Low On Resistance • Simple Drive Requirement • Low Gate Charge • Fast Switching Characteristic • RoHS compliant package Applications • Open Framed Power Supply • Adapter • STB Symbol MTN2N60FP Outline TO-220FP G：Gate D：Drain S：Source GDS MTN2N60FP CYStek Product Specification CYStech Electronics Corp. Absolute Maximum Ratings (TC=25°C) Parameter Symbol Spec. No. : C435FP Issued Date : 2009.01.19 Revised Date : Page No. : 2/8 Limits Unit Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Continuous Drain Current @TC=100°C Pulsed Drain Current @ VGS=10V (Note 1) Single Pulse Avalanche Energy (Note 2) Avalanche Current (Note 1) Repetitive Avalanche Energy (Note 1) Peak Diode Recovery dv/dt (Note 3) Maximum Temperature for Soldering @ Lead at 0.125 in(0.318mm) from case for 10 seconds Maximum Temperature for Soldering @ Package Body for 10 seconds Total Power Dissipation (TC=25℃) Linear Derating Factor Operating Junction and Storage Temperature *Drain current limited by maximum junction temperature Note : 1.Repetitive rating; pulse width limited by maximum junction temperature. 2. IAS=1.2A, VDD=50V, L=80mH, RG=25Ω, starting TJ=+25℃. 3. ISD≤2A, dI/dt≤100A/μs, VDD≤BVDSS, starting TJ=+25℃. VDS VGS ID ID IDM EAS IAR EAR dv/dt TL TPKG 600 ±30 2* 1.35* 8* 60 2 2.3 4.5 300 260 23 0.18 -55~+150 V V A A A mJ A mJ V/ns °C °C W W/°C °C Tj, Tstg Thermal Data Parameter Thermal Resistance, Junction-to-case, max Thermal Resistance, Junction-to-ambient, max Symbol Rth,j-c Rth,j-a Value 5.5 62.5 Unit °C/W °C/W MTN2N60FP CYStek Product Specification CYStech Electronics Corp. Characteristics (TC=25°C, unless otherwise specified) Symbol Static BVDSS BVDSS ∆BVDSS/∆Tj BVDS VGS(th) *GFS IGSS IDSS 600 2.0 650 0.6 700 5 8.5 1.3 4.1 9 25 24 28 180 20 4.3 230 1 4.0 ±100 1 10 4.7 12 28 60 58 66 235 25 5.6 1.5 2 8 V V V/°C V V S nA μA μA Ω Min. Typ. Max. Unit Test Conditions Spec. No. : C435FP Issued Date : 2009.01.19 Revised Date : Page No. : 3/8 *RDS(ON) Dynamic *Qg *Qgs *Qgd *td(ON) *tr *td(OFF) *tf Ciss Coss Crss Source-Drain Diode *VSD *IS *ISM *trr *Qrr - VGS=0, ID=250μA, Tj=25℃ VGS=0, ID=250μA, Tj=150℃ Reference to 25°C, ID=250μA VGS=0, ID=1.2A VDS = VGS, ID=250μA VDS =15V, ID=1A VGS=±30 VDS =600V, VGS =0 VDS =480V, VGS =0, TC=125°C VGS =10V, ID=1A nC ID=2A, VDD=480V, VGS=10V VDD=300V, ID=2A, VGS=10V, RG=25Ω, RD=150Ω ns pF VGS=0V, VDS=25V, f=1MHz V A ns μC IS=2A, VGS=0V VGS=0, IF=2A, dI/dt=100A/μs *Pulse Test : Pulse Width ≤300μs, Duty Cycle≤2% Ordering Information Device MTN2N60FP Package TO-220FP (RoHS compliant) Shipping 50 pcs/tube, 20 tubes/box, 4 boxes / carton Marking 2N60 MTN2N60FP CYStek Product Specification CYStech Electronics Corp. Characteristic Curves Spec. No. : C435FP Issued Date : 2009.01.19 Revised Date : Page No. : 4/8 MTN2N60FP CYStek Product Specification CYStech Electronics Corp. Characteristic Curves(Cont.) Spec. No. : C435FP Issued Date : 2009.01.19 Revised Date : Page No. : 5/8 MTN2N60FP CYStek Product Specification CYStech Electronics Corp. Test Circuits and Waveforms Spec. No. : C435FP Issued Date : 2009.01.19 Revised Date : Page No. : 6/8 MTN2N60FP CYStek Product Specification CYStech Electronics Corp. Test Circuits and Waveforms(Cont.) Spec. No. : C435FP Issued Date : 2009.01.19 Revised Date : Page No. : 7/8 MTN2N60FP CYStek Product Specification CYStech Electronics Corp. TO-220FP Dimension Marking: Spec. No. : C435FP Issued Date : 2009.01.19 Revised Date : Page No. : 8/8 Device Name 2N60 □□□□ Date Code Style: Pin 1.Gate 2.Drain 3.Source 4.Drain 3-Lead TO-220FP Plastic Package CYStek Package Code: FP DIM A A1 A2 A3 b b1 b2 c Inches Min. Max. 0.169 0.185 0.051 REF 0.110 0.126 0.098 0.114 0.020 0.030 0.043 0.053 0.069 0.059 0.020 0.030 Millimeters Min. Max. 4.300 4.700 1.300 REF 2.800 3.200 2.500 2.900 0.500 0.750 1.100 1.350 1.750 1.500 0.500 0.750 DIM D E e F Φ L L1 L2 Inches Min. Max. 0.408 0.392 0.583 0.598 0.100 TYP 0.106 REF 0.138 REF 1.102 1.118 0.067 0.075 0.075 0.083 Millimeters Min. Max. 10.360 9.960 14.800 15.200 2.540 TYP 2.700 REF 3.500 REF 28.000 28.400 1.700 1.900 1.900 2.100 Notes: 1.Controlling dimension: millimeters. 2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material. 3.If there is any question with packing specification or packing method, please contact your local CYStek sales office. Material: • Lead: KFC ; pure tin plated • Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0 Important Notice: • All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek. • CYStek reserves the right to make changes to its products without notice. • CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems. • CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. MTN2N60FP CYStek Product Specification