MTN2N60I3

CYStech Electronics Corp. N-Channel Enhancement Mode Power MOSFET Spec. No. : C435I3 Issued Date : 2009.01.20 Revised Date :2009.02.05 Page No. : 1/9 MTN2N60I3 Description BVDSS : 650V @Tj=150℃ RDS(ON) : 4.7Ω ID : 1.9A The MTN2N60I3 is a N-channel enhancement-mode MOSFET, providing the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness. The TO-251 package is universally preferred for all commercial-industrial applications Features • BVDSS=650V typically @ Tj=150℃ • Low On Resistance • Simple Drive Requirement • Low Gate Charge • Fast Switching Characteristic • RoHS compliant package Applications • Open Framed Power Supply • Adapter • STB Symbol MTN2N60I3 Outline TO-251 G：Gate D：Drain S：Source G B DS C MTN2N60I3 CYStek Product Specification CYStech Electronics Corp. Absolute Maximum Ratings (TC=25°C) Parameter Symbol Spec. No. : C435I3 Issued Date : 2009.01.20 Revised Date :2009.02.05 Page No. : 2/9 Limits Unit Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Continuous Drain Current @TC=100°C Pulsed Drain Current @ VGS=10V (Note 1) Single Pulse Avalanche Energy (Note 2) Avalanche Current (Note 1) Repetitive Avalanche Energy (Note 1) Peak Diode Recovery dv/dt (Note 3) Maximum Temperature for Soldering @ Lead at 0.125 in(0.318mm) from case for 10 seconds Total Power Dissipation (TA=25℃) Total Power Dissipation (TC=25℃) Linear Derating Factor Operating Junction and Storage Temperature Note : 1.Repetitive rating; pulse width limited by maximum junction temperature. 2. IAS=1.2A, VDD=50V, L=80mH, RG=25Ω, starting TJ=+25℃. 3. ISD≤2A, dI/dt≤100A/μs, VDD≤BVDSS, starting TJ=+25℃. VDS VGS ID ID IDM EAS IAR EAR dv/dt TL PD Tj, Tstg 600 ±30 1.9 1.14 7.6 60 1.9 4.4 4.5 300 1.5 44 0.35 -55~+150 V V A A A mJ A mJ V/ns °C W W W/°C °C Thermal Data Parameter Thermal Resistance, Junction-to-case, max Thermal Resistance, Junction-to-ambient, max Symbol Rth,j-c Rth,j-a Value 2.87 83.3 Unit °C/W °C/W MTN2N60I3 CYStek Product Specification CYStech Electronics Corp. Characteristics (TC=25°C, unless otherwise specified) Symbol Static BVDSS BVDSS ∆BVDSS/∆Tj BVDS VGS(th) *GFS IGSS IDSS 600 2.0 650 0.6 700 5 8.5 1.3 4.1 9 25 24 28 180 20 4.3 230 1 4.0 ±100 1 10 4.7 12 28 60 58 66 235 25 5.6 1.4 1.9 7.6 V V V/°C V V S nA μA μA Ω Min. Typ. Max. Unit Test Conditions Spec. No. : C435I3 Issued Date : 2009.01.20 Revised Date :2009.02.05 Page No. : 3/9 *RDS(ON) Dynamic *Qg *Qgs *Qgd *td(ON) *tr *td(OFF) *tf Ciss Coss Crss Source-Drain Diode *VSD *IS *ISM *trr *Qrr - VGS=0, ID=250μA, Tj=25℃ VGS=0, ID=250μA, Tj=150℃ Reference to 25°C, ID=250μA VGS=0, ID=1.2A VDS = VGS, ID=250μA VDS =15V, ID=0.95A VGS=±30 VDS =600V, VGS =0 VDS =480V, VGS =0, TC=125°C VGS =10V, ID=0.95A nC ID=2A, VDD=480V, VGS=10V VDD=300V, ID=2A, VGS=10V, RG=25Ω, RD=150Ω ns pF VGS=0V, VDS=25V, f=1MHz V A ns μC IS=1.9A, VGS=0V VGS=0, IF=2A, dI/dt=100A/μs *Pulse Test : Pulse Width ≤300μs, Duty Cycle≤2% Ordering Information Device MTN2N60I3 Package TO-251 (RoHS compliant) Shipping 80 pcs / tube, 50 tubes / box Marking 2N60 MTN2N60I3 CYStek Product Specification CYStech Electronics Corp. Characteristic Curves Spec. No. : C435I3 Issued Date : 2009.01.20 Revised Date :2009.02.05 Page No. : 4/9 MTN2N60I3 CYStek Product Specification CYStech Electronics Corp. Characteristic Curves(Cont.) Spec. No. : C435I3 Issued Date : 2009.01.20 Revised Date :2009.02.05 Page No. : 5/9 MTN2N60I3 CYStek Product Specification CYStech Electronics Corp. Test Circuits and Waveforms Spec. No. : C435I3 Issued Date : 2009.01.20 Revised Date :2009.02.05 Page No. : 6/9 MTN2N60I3 CYStek Product Specification CYStech Electronics Corp. Test Circuits and Waveforms(Cont.) Spec. No. : C435I3 Issued Date : 2009.01.20 Revised Date :2009.02.05 Page No. : 7/9 MTN2N60I3 CYStek Product Specification CYStech Electronics Corp. Recommended wave soldering condition Product Pb-free devices Peak Temperature 260 +0/-5 °C Spec. No. : C435I3 Issued Date : 2009.01.20 Revised Date :2009.02.05 Page No. : 8/9 Soldering Time 5 +1/-1 seconds Recommended temperature profile for IR reflow Profile feature Sn-Pb eutectic Assembly Average ramp-up rate 3°C/second max. (Tsmax to Tp) Preheat 100°C −Temperature Min(TS min) −Temperature Max(TS max) 150°C −Time(ts min to ts max) 60-120 seconds Time maintained above: −Temperature (TL) 183°C − Time (tL) 60-150 seconds Peak Temperature(TP) 240 +0/-5 °C Time within 5°C of actual peak 10-30 seconds temperature(tp) Ramp down rate 6°C/second max. 6 minutes max. Time 25 °C to peak temperature MTN2N60I3 Pb-free Assembly 3°C/second max. 150°C 200°C 60-180 seconds 217°C 60-150 seconds 260 +0/-5 °C 20-40 seconds 6°C/second max. 8 minutes max. Note : All temperatures refer to topside of the package, measured on the package body surface. CYStek Product Specification CYStech Electronics Corp. TO-251 Dimension Marking: A B C D F 3 E K 2 1 J G Product Name Date Code Spec. No. : C435I3 Issued Date : 2009.01.20 Revised Date :2009.02.05 Page No. : 9/9 2N60 □□ □□ I H Style: Pin 1.Gate 2.Drain 3.Source 3-Lead TO-251 Plastic Package CYStek Package Code: I3 *: Typical DIM A B C D E F Inches Min. Max. 0.0177 0.0217 0.0354 0.0591 0.0177 0.0236 0.0866 0.0945 0.2441 0.2677 0.2677 0.2835 Millimeters Min. Max. 0.45 0.55 0.90 1.50 0.45 0.60 2.20 2.40 6.20 6.80 6.80 7.20 DIM G H I J K Inches Min. Max. 0.2559 *0.1811 0.0449 0.0346 0.2047 0.2165 Millimeters Min. Max. 6.50 *4.60 1.14 0.88 5.20 5.50 Notes: 1.Controlling dimension: millimeters. 2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material. 3.If there is any question with packing specification or packing method, please contact your local CYStek sales office. Material: • Lead: KFC; pure tin plated • Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0 Important Notice: • All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek. • CYStek reserves the right to make changes to its products without notice. • CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems. • CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. MTN2N60I3 CYStek Product Specification