MTN55N03J3

CYStech Electronics Corp. N-Channel Enhancement Mode Power MOSFET Spec. No. : C411J3 Issued Date : 2007.07.05 Revised Date : 2009.02.04 Page No. : 1/7 MTN55N03J3 Features • Dynamic dv/dt Rating • Simple Drive Requirement • Repetitive Avalanche Rated • Fast Switching Characteristic • RoHS compliant package BVDSS ID RDSON 25V 55A 6mΩ Symbol MTN55N03J3 Outline TO-252 G：Gate D：Drain S：Source GDS Absolute Maximum Ratings (Ta=25°C) Parameter Symbol Limits Unit Drain-Source Voltage Gate-Source Voltage Continuous Drain Current @VGS=10V, TC=25°C Continuous Drain Current @VGS=10V, TC=100°C Pulsed Drain Current Total Power Dissipation (TC=25℃) Linear Derating Factor Single Pulse Avalanche Energy Single Pulse Avalanche Current Operating Junction and Storage Temperature Note : *1. Pulse width limited by safe operating area *2 . Tj=25°C, VDD=20V, L=0.1mH, RG=25Ω, IAS=10A MTN55N03J3 VDS VGS ID ID IDM Pd EAS IAS Tj, Tstg 25 ±20 55 35 215 *1 62.5 0.5 240 *2 31 -55~+150 V V A A A W W/°C mJ A °C CYStek Product Specification CYStech Electronics Corp. Thermal Data Parameter Thermal Resistance, Junction-to-case, max Thermal Resistance, Junction-to-ambient, max Symbol Rth,j-c Rth,j-a Spec. No. : C411J3 Issued Date : 2007.07.05 Revised Date : 2009.02.04 Page No. : 2/7 Value 2.0 110 Unit °C/W °C/W Characteristics (Tj=25°C, unless otherwise specified) Symbol Min. Typ. 0.037 30 4.5 7 16.8 6.0 4.9 15.1 4 45.2 7.6 2326 331 174 Max. 3.0 ±100 1 25 6 9 1.5 55 Unit V V/°C V S nA μA μA mΩ mΩ Test Conditions VGS=0, ID=250μA Reference to 25°C, ID=1mA VDS = VGS, ID=250μA VDS =10V, ID=28A VGS=±20 VDS =25V, VGS =0 VDS =20V, VGS =0, Tj=150°C VGS =10V, ID=30A VGS =4.5V, ID=30A Static BVDSS 25 ∆BVDSS/∆Tj VGS(th) 1.0 GFS IGSS IDSS IDSS *RDS(ON) *RDS(ON) Dynamic *Qg *Qgs *Qgd *td(ON) *tr *td(OFF) *tf Ciss Coss Crss Source-Drain Diode *VSD *IS - nC ID=28A, VDS=20V, VGS=5V VDS=15V, ID=28A, VGS=10V, RG=3.3Ω, RD=0.53Ω ns pF VGS=0V, VDS=25V, f=1MHz V A IS=20A, VGS=0V VD=VG=0, VS=1.5V *Pulse Test : Pulse Width ≤300μs, Duty Cycle≤2% Ordering Information Device MTN55N03J3 Package TO-252 (RoHS compliant) Shipping 2500 pcs / Tape & Reel Marking 55N03 MTN55N03J3 CYStek Product Specification CYStech Electronics Corp. Characteristic Curves Spec. No. : C411J3 Issued Date : 2007.07.05 Revised Date : 2009.02.04 Page No. : 3/7 MTN55N03J3 CYStek Product Specification CYStech Electronics Corp. Characteristic Curves(Cont.) Spec. No. : C411J3 Issued Date : 2007.07.05 Revised Date : 2009.02.04 Page No. : 4/7 MTN55N03J3 CYStek Product Specification CYStech Electronics Corp. Reel Dimension Spec. No. : C411J3 Issued Date : 2007.07.05 Revised Date : 2009.02.04 Page No. : 5/7 Carrier Tape Dimension MTN55N03J3 CYStek Product Specification CYStech Electronics Corp. Recommended wave soldering condition Product Pb-free devices Peak Temperature 260 +0/-5 °C Spec. No. : C411J3 Issued Date : 2007.07.05 Revised Date : 2009.02.04 Page No. : 6/7 Soldering Time 5 +1/-1 seconds Recommended temperature profile for IR reflow Profile feature Sn-Pb eutectic Assembly Average ramp-up rate 3°C/second max. (Tsmax to Tp) Preheat 100°C −Temperature Min(TS min) −Temperature Max(TS max) 150°C −Time(ts min to ts max) 60-120 seconds Time maintained above: −Temperature (TL) 183°C − Time (tL) 60-150 seconds Peak Temperature(TP) 240 +0/-5 °C Time within 5°C of actual peak 10-30 seconds temperature(tp) Ramp down rate 6°C/second max. 6 minutes max. Time 25 °C to peak temperature MTN55N03J3 Pb-free Assembly 3°C/second max. 150°C 200°C 60-180 seconds 217°C 60-150 seconds 260 +0/-5 °C 20-40 seconds 6°C/second max. 8 minutes max. Note : All temperatures refer to topside of the package, measured on the package body surface. CYStek Product Specification CYStech Electronics Corp. TO-252 Dimension A C Spec. No. : C411J3 Issued Date : 2007.07.05 Revised Date : 2009.02.04 Page No. : 7/7 Marking: B L F G D Device Name Date code 55N03 □□□□ 3 H E K 2 I 1 J Style: Pin 1.Gate 2.Drain 3.Source 3-Lead TO-252 Plastic Surface Mount Package CYStek Package Code: J3 *: Typical DIM A B C D E F Inches Min. Max. 0.0177 0.0217 0.0650 0.0768 0.0354 0.0591 0.0177 0.0236 0.2441 0.2677 0.2125 0.2283 Millimeters Min. Max. 0.45 0.55 1.65 1.95 0.90 1.50 0.45 0.60 6.20 6.80 5.40 5.80 DIM G H I J K L Inches Min. Max. 0.0866 0.1102 *0.0906 0.0449 0.0346 0.2047 0.2165 0.0551 0.0630 Millimeters Min. Max. 2.20 2.80 *2.30 1.14 0.88 5.20 5.50 1.40 1.60 Notes: 1.Controlling dimension: millimeters. 2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material. 3.If there is any question with packing specification or packing method, please contact your local CYStek sales office. Material: • Lead: KFC; pure tin plated • Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0 Important Notice: • All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek. • CYStek reserves the right to make changes to its products without notice. • CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems. • CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. MTN55N03J3 CYStek Product Specification