CYStech Electronics Corp.
N-Channel Enhancement Mode Power MOSFET
Spec. No. : C720E3 Issued Date : 2009.06.06 Revised Date : Page No. : 1/8
MTN8N45E3
Description
BVDSS : 450V RDS(ON) : 0.85Ω I D : 8A
The MTN8N45E3 is a N-channel enhancement-mode MOSFET, providing the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness. The TO-220 package is universally preferred for all commercial-industrial applications
Features
• BVDSS=500V typically @ Tj=150℃ • Low On Resistance • Simple Drive Requirement • Low Gate Charge • Fast Switching Characteristic • RoHS compliant package
Applications
• Ballast • Inverter
Symbol
MTN8N45E3
Outline
TO-220
G:Gate D:Drain S:Source
GDS
MTN8N45E3
CYStek Product Specification
CYStech Electronics Corp.
Absolute Maximum Ratings (TC=25°C)
Parameter Symbol
Spec. No. : C720E3 Issued Date : 2009.06.06 Revised Date : Page No. : 2/8
Limits
Unit
Drain-Source Voltage (Note 1) Gate-Source Voltage Continuous Drain Current Continuous Drain Current @TC=100°C Pulsed Drain Current @ VGS=10V (Note 2) Single Pulse Avalanche Energy (Note 3) Avalanche Current (Note 2) Repetitive Avalanche Energy (Note 2) Peak Diode Recovery dv/dt (Note 4) Maximum Temperature for Soldering @ Lead at 0.125 in(3.175mm) from case for 10 seconds Total Power Dissipation (TC=25℃) Linear Derating Factor above 25℃ Operating Junction and Storage Temperature
*Drain current limited by maximum junction temperature Note : 1. TJ=+25℃ to +150℃. 2. Repetitive rating; pulse width limited by maximum junction temperature. 3. ISD=8A, dI/dt
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