MTN3205E3

CYStech Electronics Corp. N-Channel Enhancement Mode Power MOSFET Spec. No. : C444E3 Issued Date : 2009.05.25 Revised Date : Page No. : 1/8 MTN3205E3 Description BVDSS RDSON(Max) ID 55V 8 mΩ 110A The MTN3205E3 is a N-channel enhancement-mode MOSFET, providing the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness. The TO-220 package is universally preferred for all commercial-industrial applications Features • Low On Resistance • Simple Drive Requirement • Low Gate Charge • Fast Switching Characteristic • RoHS compliant package Applications • E-bike • UPS Symbol MTN3205E3 Outline TO-220 G：Gate D：Drain S：Source GDS MTN3205E3 CYStek Product Specification CYStech Electronics Corp. Absolute Maximum Ratings (TC=25°C) Parameter Symbol Spec. No. : C444E3 Issued Date : 2009.05.25 Revised Date : Page No. : 2/8 Limits Unit Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Continuous Drain Current @TC=100°C Pulsed Drain Current @ VGS=10V Single Pulse Avalanche Energy Repetitive Avalanche Energy Total Power Dissipation (TC=25℃) Linear Derating Factor Operating Junction and Storage Temperature (Note 1) (Note 2) (Note 1) VDS VGS ID ID IDM EAS EAR PD Tj, Tstg 55 ±20 110 66 440 550 15 150 1.0 -55~+175 V V A A A mJ W W/°C °C Note : 1.Repetitive rating; pulse width limited by maximum junction temperature. 2. IAS=100A, VDD=30V, L=0.05mH, RG=25Ω, starting TJ=+25℃ Thermal Data Parameter Thermal Resistance, Junction-to-case, max Thermal Resistance, Junction-to-ambient, max Symbol Rth,j-c Rth,j-a Value 1.0 62.5 Unit °C/W °C/W MTN3205E3 CYStek Product Specification CYStech Electronics Corp. Characteristics (TC=25°C, unless otherwise specified) Symbol Static BVDSS VGS(th) IGSS IDSS Min. 55 2.0 Typ. 50 25.7 5.8 7.5 10.2 35.2 33.8 6.7 1413 320 23 70 120 Max. 4.0 ±100 25 250 8 110 440 1.5 Unit V V nA μA μA mΩ S nC Test Conditions Spec. No. : C444E3 Issued Date : 2009.05.25 Revised Date : Page No. : 3/8 RDS(ON) GFS Dynamic Qg Qgs Qgd td(ON) tr td(OFF) tf Ciss Coss Crss Source-Drain Diode IS ISM VSD trr Qrr - VGS=0, ID=250μA VDS = VGS, ID=250μA VGS=±20 VDS =55V, VGS =0 VDS =55V, VGS =0, Tj=125°C VGS =10V, ID=66A (Note 1) VDS =10V, ID=55A (Note 1) VDS=27.5V, ID=66A, VGS=10V (Note 1 & 2) ns VDS=27.5V, ID=66A, VGS=10V, RGS=4.7Ω, RD=0.42Ω (Note 1 & 2) VGS=0V, VDS=27.5V, f=1MHz pF A V ns μC IS=55A, VGS=0V (Note 3) (Note 1) VGS=0, IF=66A, dIF/dt=100A/μs Note : 1. Pulse Test : Pulse Width ≤300μs, Duty Cycle≤2% 2. Independent of operating temperature 3. Pulse width limited by maximum junction temperature. Ordering Information Device MTN3205E3 Package TO-220 (RoHS compliant) Shipping 50 pcs/tube, 20 tubes/box, 4 boxes / carton Marking N3205 MTN3205E3 CYStek Product Specification CYStech Electronics Corp. Characteristic Curves Spec. No. : C444E3 Issued Date : 2009.05.25 Revised Date : Page No. : 4/8 MTN3205E3 CYStek Product Specification CYStech Electronics Corp. Characteristic Curves(Cont.) Spec. No. : C444E3 Issued Date : 2009.05.25 Revised Date : Page No. : 5/8 MTN3205E3 CYStek Product Specification CYStech Electronics Corp. Test Circuit and Waveforms Spec. No. : C444E3 Issued Date : 2009.05.25 Revised Date : Page No. : 6/8 MTN3205E3 CYStek Product Specification CYStech Electronics Corp. Test Circuit and Waveforms(Cont.) Spec. No. : C444E3 Issued Date : 2009.05.25 Revised Date : Page No. : 7/8 MTN3205E3 CYStek Product Specification CYStech Electronics Corp. TO-220 Dimension Marking: A D B E C Device Name Spec. No. : C444E3 Issued Date : 2009.05.25 Revised Date : Page No. : 8/8 N3205 □□□□ Date Code H I G 4 P M 3 2 1 N K O 3-Lead TO-220 Plastic Package CYStek Package Code: E3 Style: Pin 1.Gate 2.Drain 3.Source 4.Drain *: Typical DIM A B C D E G H Inches Min. Max. 0.2441 0.2598 0.3386 0.3543 0.1732 0.1890 0.0492 0.0571 0.0142 0.0197 0.3858 0.4094 *0.6398 Millimeters Min. Max. 6.20 6.60 8.60 9.00 4.40 4.80 1.25 1.45 0.36 0.50 9.80 10.40 *16.25 DIM I K M N O P Inches Min. Max. *0.1508 0.0299 0.0394 0.0461 0.0579 *0.1000 0.5217 0.5610 0.5787 0.6024 Millimeters Min. Max. *3.83 0.76 1.00 1.17 1.47 *2.54 13.25 14.25 14.70 15.30 Notes: 1.Controlling dimension: millimeters. 2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material. 3.If there is any question with packing specification or packing method, please contact your local CYStek sales office. Material: • Lead: KFC ; pure tin plated • Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0 Important Notice: • All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek. • CYStek reserves the right to make changes to its products without notice. • CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems. • CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. MTN3205E3 CYStek Product Specification