MTN3018S3

CYStech Electronics Corp. N-CHANNEL MOSFET Spec. No. : C320S3-R Issued Date : 2007.11.29 Revised Date : 2008.01.25 Page No. : 1/7 MTN3018S3 Description The MTN3018S3 is a N-channel enhancement-mode MOSFET. Features • Low on-resistance • High ESD • High speed switching • Low-voltage drive(4V) • Easily designed drive circuits • Easy to use in parallel • Pb-free package Symbol MTN3018S3 D Outline SOT-323 D G G S S G：Gate S：Source D：Drain MTN3018S3 CYStek Product Specification CYStech Electronics Corp. Absolute Maximum Ratings (Ta=25°C) Parameter Drain-Source Voltage Gate-Source Voltage Drain Current Drain Reverse Current Total Power Dissipation ESD susceptibility Channel Temperature Storage Temperature Continuous Pulsed Continuous Pulsed Spec. No. : C320S3-R Issued Date : 2007.11.29 Revised Date : 2008.01.25 Page No. : 2/7 Symbol VDSS VGSS ID IDP IDR IDRP PD TCH Tstg Limits 60 ±20 115 700 *1 115 700 *1 200 *2 1250 *3 +150 -55~+150 Unit V V mA mA mA mA mW V °C °C Note : *1. Pulse Width ≤ 300μs, Duty cycle ≤2% *2. When the device is mounted on a glass epoxy board with area measuring 1×0.75×0.62 inch *3. Human body model, 1.5kΩ in series with 100pF Electrical Characteristics (Ta=25°C) Symbol Min. Typ. Max. BVDSS* 60 VGS(th) 1 2.5 IGSS ±10 IDSS 1 7.4 13 7.8 15 RDS(ON)* 4.4 12 4.9 6 3.3 4.5 GFS 100 Ciss 7.32 Coss 3.42 Crss 7.63 - Unit V V μA μA Ω mS pF Test Conditions VGS=0, ID=10μA VDS=VGS, ID=250μA VGS=±20V, VDS=0 VDS=60V, VGS=0 ID=1mA, VGS=2.5V ID=10mA, VGS=2.5V ID=10mA, VGS=4V ID=200mA, VGS=4V ID=200mA, VGS=10V VDS=10V, ID=100mA VDS=10V, VGS=0, f=1MHz *Pulse Test : Pulse Width ≤380μs, Duty Cycle≤2% Ordering Information Device MTN3018S3 Package SOT-323 (Pb-free) Shipping 3000 pcs / Tape & Reel Marking 72 MTN3018S3 CYStek Product Specification CYStech Electronics Corp. Characteristic Curves Typical Output Characteristics 0.3 4V 0.25 Drain Current - ID(A) 0.2 0.15 0.1 0.05 VGS=2.2V 0 0 1 2 3 Drain-Source Voltage -VDS(V) 4 3V 6V 3.5V Spec. No. : C320S3-R Issued Date : 2007.11.29 Revised Date : 2008.01.25 Page No. : 3/7 Typical Transfer Characteristics 0.3 0.25 Drain Current -ID(A) 0.2 0.15 0.1 0.05 0 0 1 2 3 Gate-Source Voltage-VGS(V) 4 VDS=10V Static Drain-Source On-State resistance vs Drain Current Static Drain-Source On-State resistance vs Drain Current 1000 Static Drain-Source On-State ResistanceRDS(on)(Ω) 10 Static Drain-Source On-State Resistance-RDS(on)(Ω) 100 VGS=2.5V VGS=4V VGS=5V VGS=10V 10 1 0.001 0.01 0.1 Drain Current-ID(A) 1 1 0.001 0.01 0.1 1 Drain Current-ID(A) Static Drain-Source On-State Resistance vs Gate-Source Voltage R everse Drain Current vs Source-Drain Voltage 10 Source-Drain Voltage-VSD(V) 7 Static Drain-Source On-State Resistance-RDS(ON)(Ω) 6 5 4 3 2 1 0 0 5 10 15 20 Gate-Source Voltage-VGS(V) 25 ID=50mA ID=100mA 1 0.1 0.01 0.001 0 0.2 0.4 0.6 0.8 Reverse Drain Current -IDR(A) 1 MTN3018S3 CYStek Product Specification CYStech Electronics Corp. Characteristic Curves(Cont.) Capacitance vs Drain-to-Source Voltage 100 Power Dissipation---PD(mW) 250 200 150 100 50 0 Spec. No. : C320S3-R Issued Date : 2007.11.29 Revised Date : 2008.01.25 Page No. : 4/7 Power Derating Curve Capacitance---(pF) 10 Crss Ciss C oss 1 0.1 1 10 Drain-Source Voltage -VDS(V) 100 0 50 100 150 Ambient Temperature---TA(℃) 200 MTN3018S3 CYStek Product Specification CYStech Electronics Corp. Reel Dimension Spec. No. : C320S3-R Issued Date : 2007.11.29 Revised Date : 2008.01.25 Page No. : 5/7 Carrier Tape Dimension MTN3018S3 CYStek Product Specification CYStech Electronics Corp. SOT-323 Dimension Spec. No. : C320S3-R Issued Date : 2007.11.29 Revised Date : 2008.01.25 Page No. : 6/7 3 A Marking: A1 Q Lp detail Z W B C 1 e1 e D bp 2 TE 72 E A Z θ He 0 1 scale 2 mm 3-Lead SOT-323 Plastic Surface Mounted Package CYStek Package Code: S3 v A Style: Pin 1.Gate 2.Source 3.Drain *: Typical DIM A A1 bp C D E e Inches Min. Max. 0.0315 0.0433 0.0000 0.0039 0.0118 0.0157 0.0039 0.0098 0.0709 0.0866 0.0453 0.0531 0.0512 - Millimeters Min. Max. 0.80 1.10 0.00 0.10 0.30 0.40 0.10 0.25 1.80 2.20 1.15 1.35 1.3 - DIM e1 He Lp Q v w θ Inches Min. Max. 0.0256 0.0787 0.0886 0.0059 0.0177 0.0051 0.0091 0.0079 0.0079 - Millimeters Min. Max. 0.65 2.00 2.25 0.15 0.45 0.13 0.23 0.2 0.2 10° 0° Notes: 1.Controlling dimension: millimeters. 2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material. 3.If there is any question with packing specification or packing method, please contact your local CYStek sales office. Material: • Lead: 42 Alloy ; solder plating • Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0 Recommended wave soldering condition Product Pb-free devices Peak Temperature 260 +0/-5 °C Soldering Time 5 +1/-1 seconds MTN3018S3 CYStek Product Specification CYStech Electronics Corp. Recommended temperature profile for IR reflow Spec. No. : C320S3-R Issued Date : 2007.11.29 Revised Date : 2008.01.25 Page No. : 7/7 Profile feature Average ramp-up rate (Tsmax to Tp) Preheat −Temperature Min(TS min) −Temperature Max(TS max) −Time(ts min to ts max) Time maintained above: −Temperature (TL) − Time (tL) Peak Temperature(TP) Time within 5°C of actual peak temperature(tp) Ramp down rate Time 25 °C to peak temperature Sn-Pb eutectic Assembly 3°C/second max. 100°C 150°C 60-120 seconds 183°C 60-150 seconds 240 +0/-5 °C 10-30 seconds 6°C/second max. 6 minutes max. Pb-free Assembly 3°C/second max. 150°C 200°C 60-180 seconds 217°C 60-150 seconds 260 +0/-5 °C 20-40 seconds 6°C/second max. 8 minutes max. Note : All temperatures refer to topside of the package, measured on the package body surface. Important Notice: • All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek. • CYStek reserves the right to make changes to its products without notice. • CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems. • CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. MTN3018S3 CYStek Product Specification