0
登录后你可以
  • 下载海量资料
  • 学习在线课程
  • 观看技术视频
  • 写文章/发帖/加入社区
创作中心
发布
  • 发文章

  • 发资料

  • 发帖

  • 提问

  • 发视频

创作活动
MTN9973J3

MTN9973J3

  • 厂商:

    CYSTEKEC(全宇昕)

  • 封装:

  • 描述:

    MTN9973J3 - N-Channel Enhancement Mode Power MOSFET - Cystech Electonics Corp.

  • 数据手册
  • 价格&库存
MTN9973J3 数据手册
CYStech Electronics Corp. N-Channel Enhancement Mode Power MOSFET Spec. No. : C418J3 Issued Date : 2008.08.20 Revised Date : 2009.02.04 Page No. : 1/7 MTN9973J3 Features • VDS=60V BVDSS ID RDSON 60V 14A 80mΩ RDS(ON)=80mΩ(max.)@VGS=10V, ID=9A RDS(ON)=100mΩ(max.)@VGS=4.5V, ID=6A • Low Gate Charge • Simple Drive Requirement • Repetitive Avalanche Rated • Fast Switching Characteristic • RoHS compliant package Symbol MTN9973J3 Outline TO-252 G:Gate D:Drain S:Source GDS Absolute Maximum Ratings (Ta=25°C) Parameter Symbol Limits Unit Drain-Source Voltage Gate-Source Voltage Continuous Drain Current @VGS=10V, TC=25°C Continuous Drain Current @VGS=10V, TC=100°C Pulsed Drain Current Total Power Dissipation (TC=25℃) Linear Derating Factor Operating Junction and Storage Temperature Note : *1. Pulse width limited by safe operating area MTN9973J3 VDS VGS ID ID IDM Pd Tj, Tstg 60 ±20 14 9 40 *1 27 0.22 -55~+150 V V A A A W W/°C °C CYStek Product Specification CYStech Electronics Corp. Thermal Data Parameter Thermal Resistance, Junction-to-case, max Thermal Resistance, Junction-to-ambient, max Symbol Rth,j-c Rth,j-a Spec. No. : C418J3 Issued Date : 2008.08.20 Revised Date : 2009.02.04 Page No. : 2/7 Value 4.5 110 Unit °C/W °C/W Characteristics (Tj=25°C, unless otherwise specified) Symbol Static BVDSS ∆BVDSS/∆Tj VGS(th) GFS IGSS IDSS Min. 60 1.0 Typ. 0.05 8.6 8 3 4 7 15 16 3 720 77 45 28 27 Max. 3.0 ±100 1 25 80 100 13 1150 1.2 Unit V V/°C V S nA μA μA mΩ mΩ Test Conditions VGS=0, ID=250μA Reference to 25°C, ID=1mA VDS = VGS, ID=250μA VDS =10V, ID=9A VGS=±20 VDS =60V, VGS =0 VDS =48V, VGS =0, Tj=150°C VGS =10V, ID=9A VGS =4.5V, ID=6A *RDS(ON) *RDS(ON) Dynamic *Qg *Qgs *Qgd *td(ON) *tr *td(OFF) *tf Ciss Coss Crss Source-Drain Diode *VSD *trr *Qrr - nC ID=9A, VDS=48V, VGS=4.5V VDS=30V, ID=9A, VGS=10V, RG=3.3Ω, RD=3.3Ω ns pF VGS=0V, VDS=25V, f=1MHz V ns nC IS=14A, VGS=0V IS=9A, VGS=0, dI/dt=100A/μs *Pulse Test : Pulse Width ≤300μs, Duty Cycle≤2% Ordering Information Device MTN9973J3 Package TO-252 (RoHS compliant) Shipping 2500 pcs / Tape & Reel Marking 9973 MTN9973J3 CYStek Product Specification CYStech Electronics Corp. Characteristic Curves Spec. No. : C418J3 Issued Date : 2008.08.20 Revised Date : 2009.02.04 Page No. : 3/7 MTN9973J3 CYStek Product Specification CYStech Electronics Corp. Characteristic Curves(Cont.) Spec. No. : C418J3 Issued Date : 2008.08.20 Revised Date : 2009.02.04 Page No. : 4/7 MTN9973J3 CYStek Product Specification CYStech Electronics Corp. Reel Dimension Spec. No. : C418J3 Issued Date : 2008.08.20 Revised Date : 2009.02.04 Page No. : 5/7 Carrier Tape Dimension MTN9973J3 CYStek Product Specification CYStech Electronics Corp. Recommended wave soldering condition Product Pb-free devices Peak Temperature 260 +0/-5 °C Spec. No. : C418J3 Issued Date : 2008.08.20 Revised Date : 2009.02.04 Page No. : 6/7 Soldering Time 5 +1/-1 seconds Recommended temperature profile for IR reflow Profile feature Sn-Pb eutectic Assembly Average ramp-up rate 3°C/second max. (Tsmax to Tp) Preheat 100°C −Temperature Min(TS min) −Temperature Max(TS max) 150°C −Time(ts min to ts max) 60-120 seconds Time maintained above: −Temperature (TL) 183°C − Time (tL) 60-150 seconds Peak Temperature(TP) 240 +0/-5 °C Time within 5°C of actual peak 10-30 seconds temperature(tp) Ramp down rate 6°C/second max. 6 minutes max. Time 25 °C to peak temperature MTN9973J3 Pb-free Assembly 3°C/second max. 150°C 200°C 60-180 seconds 217°C 60-150 seconds 260 +0/-5 °C 20-40 seconds 6°C/second max. 8 minutes max. Note : All temperatures refer to topside of the package, measured on the package body surface. CYStek Product Specification CYStech Electronics Corp. TO-252 Dimension A C Spec. No. : C418J3 Issued Date : 2008.08.20 Revised Date : 2009.02.04 Page No. : 7/7 Marking: B L F G D Device Name Date code 9973 □□□□ 3 H E K 2 I 1 J Style: Pin 1.Gate 2.Drain 3.Source 3-Lead TO-252 Plastic Surface Mount Package CYStek Package Code: J3 *: Typical DIM A B C D E F Inches Min. Max. 0.0177 0.0217 0.0650 0.0768 0.0354 0.0591 0.0177 0.0236 0.2441 0.2677 0.2125 0.2283 Millimeters Min. Max. 0.45 0.55 1.65 1.95 0.90 1.50 0.45 0.60 6.20 6.80 5.40 5.80 DIM G H I J K L Inches Min. Max. 0.0866 0.1102 *0.0906 0.0449 0.0346 0.2047 0.2165 0.0551 0.0630 Millimeters Min. Max. 2.20 2.80 *2.30 1.14 0.88 5.20 5.50 1.40 1.60 Notes: 1.Controlling dimension: millimeters. 2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material. 3.If there is any question with packing specification or packing method, please contact your local CYStek sales office. Material: • Lead : KFC; tin plating • Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0 Important Notice: • All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek. • CYStek reserves the right to make changes to its products without notice. • CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems. • CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. MTN9973J3 CYStek Product Specification
MTN9973J3 价格&库存

很抱歉,暂时无法提供与“MTN9973J3”相匹配的价格&库存,您可以联系我们找货

免费人工找货