| IPT08Q08-BEA | IPS[IPSEMICONDUCTORCO.,LTD.] | IPT08Q08-BEA - High current density due to double mesa technology - IP SEMICONDUCTOR CO., LTD. | | | 获取价格 |
| IPT08Q06-BEB | IPS[IPSEMICONDUCTORCO.,LTD.] | IPT08Q06-BEB - High current density due to double mesa technology - IP SEMICONDUCTOR CO., LTD. | | | 获取价格 |
| IPT08Q06-BEA | IPS[IPSEMICONDUCTORCO.,LTD.] | IPT08Q06-BEA - High current density due to double mesa technology - IP SEMICONDUCTOR CO., LTD. | | | 获取价格 |
| IPT0808-BED | IPS[IPSEMICONDUCTORCO.,LTD.] | IPT0808-BED - High current density due to double mesa technology - IP SEMICONDUCTOR CO., LTD. | | | 获取价格 |
| IPT0806-SED | IPS[IPSEMICONDUCTORCO.,LTD.] | IPT0806-SED - High current density due to double mesa technology - IP SEMICONDUCTOR CO., LTD. | | | 获取价格 |
| IPT0806-SEB | IPS[IPSEMICONDUCTORCO.,LTD.] | IPT0806-SEB - High current density due to double mesa technology - IP SEMICONDUCTOR CO., LTD. | | | 获取价格 |
| IPT0806-SEA | IPS[IPSEMICONDUCTORCO.,LTD.] | IPT0806-SEA - High current density due to double mesa technology - IP SEMICONDUCTOR CO., LTD. | | | 获取价格 |
| IPT0806-CEA | IPS[IPSEMICONDUCTORCO.,LTD.] | IPT0806-CEA - High current density due to double mesa technology - IP SEMICONDUCTOR CO., LTD. | | | 获取价格 |
| IPT0806-BEB | IPS[IPSEMICONDUCTORCO.,LTD.] | IPT0806-BEB - High current density due to double mesa technology - IP SEMICONDUCTOR CO., LTD. | | | 获取价格 |
| IPT04Q08-TEI | IPS[IPSEMICONDUCTORCO.,LTD.] | IPT04Q08-TEI - High current density due to double mesa technology - IP SEMICONDUCTOR CO., LTD. | | | 获取价格 |
| IPT04Q08-SEI | IPS[IPSEMICONDUCTORCO.,LTD.] | IPT04Q08-SEI - High current density due to double mesa technology - IP SEMICONDUCTOR CO., LTD. | | | 获取价格 |
| IPT04Q08-SEA | IPS[IPSEMICONDUCTORCO.,LTD.] | IPT04Q08-SEA - High current density due to double mesa technology - IP SEMICONDUCTOR CO., LTD. | | | 获取价格 |
| IPT04Q08-AEB | IPS[IPSEMICONDUCTORCO.,LTD.] | IPT04Q08-AEB - High current density due to double mesa technology - IP SEMICONDUCTOR CO., LTD. | | | 获取价格 |
| IPT04Q06-TEI | IPS[IPSEMICONDUCTORCO.,LTD.] | IPT04Q06-TEI - High current density due to double mesa technology - IP SEMICONDUCTOR CO., LTD. | | | 获取价格 |
| IPT04Q06-TED | IPS[IPSEMICONDUCTORCO.,LTD.] | IPT04Q06-TED - High current density due to double mesa technology - IP SEMICONDUCTOR CO., LTD. | | | 获取价格 |
| IPT04Q06-TEA | IPS[IPSEMICONDUCTORCO.,LTD.] | IPT04Q06-TEA - High current density due to double mesa technology - IP SEMICONDUCTOR CO., LTD. | | | 获取价格 |
| IPT04Q06-DEB | IPS[IPSEMICONDUCTORCO.,LTD.] | IPT04Q06-DEB - High current density due to double mesa technology - IP SEMICONDUCTOR CO., LTD. | | | 获取价格 |
| IPT0408-35I | IPS[IPSEMICONDUCTORCO.,LTD.] | IPT0408-35I - High current density due to double mesa technology - IP SEMICONDUCTOR CO., LTD. | | | 获取价格 |
| IPT0408-35B | IPS[IPSEMICONDUCTORCO.,LTD.] | IPT0408-35B - High current density due to double mesa technology - IP SEMICONDUCTOR CO., LTD. | | | 获取价格 |
| IPT0408-35A | IPS[IPSEMICONDUCTORCO.,LTD.] | IPT0408-35A - High current density due to double mesa technology - IP SEMICONDUCTOR CO., LTD. | | | 获取价格 |
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