| PDTA124XT,215 | Rubycon Corporation | 晶体管类型:1个PNP-预偏置;功率(Pd):250mW;集电极电流(Ic):100mA;集射极击穿电压(Vceo):50V;集电极截止电流(Icbo):100nA;直流电流增益(hFE@Ic,Vce):80@5mA,5V; | | | 获取价格 |
| PDTC115TT,215 | Rubycon Corporation | 晶体管类型:1个NPN-预偏置;功率(Pd):250mW;集电极电流(Ic):100mA;集射极击穿电压(Vceo):50V;集电极截止电流(Icbo):1uA;直流电流增益(hFE@Ic,Vce):100@1mA,5V; | | | 获取价格 |
| PMV28UNEAR | Rubycon Corporation | 类型:N沟道;漏源电压(Vdss):20V;连续漏极电流(Id):4.7A;功率(Pd):510mW；3.9W;导通电阻(RDS(on)@Vgs,Id):32mΩ@4.7A,4.5V; | | | 获取价格 |
| PMV52ENEAR | Rubycon Corporation | 类型:N沟道;漏源电压(Vdss):30V;连续漏极电流(Id):3.2A;功率(Pd):630mW；5.7W;导通电阻(RDS(on)@Vgs,Id):70mΩ@3.2A,10V; | | | 获取价格 |
| PMV90ENER | Rubycon Corporation | 类型:N沟道;漏源电压(Vdss):30V;连续漏极电流(Id):3A;功率(Pd):460mW;导通电阻(RDS(on)@Vgs,Id):72mΩ@3A,10V; | | | 获取价格 |
| PMV164ENEAR | Rubycon Corporation | 类型:N沟道;漏源电压(Vdss):60V;连续漏极电流(Id):1.6A;功率(Pd):640mW；5.8W;导通电阻(RDS(on)@Vgs,Id):218mΩ@1.6A,10V; | | | 获取价格 |
| PBRP113ZT,215 | Rubycon Corporation | 晶体管类型:1个PNP-预偏置;功率(Pd):250mW;集电极电流(Ic):600mA;集射极击穿电压(Vceo):40V; | | | 获取价格 |
| PMBT2222A,215 | Rubycon Corporation | 晶体管类型:NPN;集射极击穿电压(Vceo):40V;集电极电流(Ic):600mA;功率(Pd):250mW;直流电流增益(hFE@Ic,Vce):100@150mA,10V; | | | 获取价格 |
| PMBT3904,215 | Rubycon Corporation | 晶体管类型:NPN;集射极击穿电压(Vceo):40V;集电极电流(Ic):200mA;功率(Pd):250mW;直流电流增益(hFE@Ic,Vce):100@10mA,1V; | | | 获取价格 |
| BC856B,215 | Rubycon Corporation | 晶体管类型:PNP;集射极击穿电压(Vceo):65V;集电极电流(Ic):100mA;功率(Pd):250mW;直流电流增益(hFE@Ic,Vce):220@2mA,5V; | | | 获取价格 |
| MMBT3906,215 | Rubycon Corporation | 晶体管类型:PNP;集射极击穿电压(Vceo):40V;集电极电流(Ic):200mA;功率(Pd):250mW;直流电流增益(hFE@Ic,Vce):100@10mA,1V; | | | 获取价格 |
| PBSS8110T,215 | Rubycon Corporation | 晶体管类型:NPN;集射极击穿电压(Vceo):100V;集电极电流(Ic):1A;功率(Pd):480mW;直流电流增益(hFE@Ic,Vce):150@250mA,10V; | | | 获取价格 |
| PMBTA06,215 | Rubycon Corporation | 晶体管类型:NPN;集射极击穿电压(Vceo):80V;集电极电流(Ic):500mA;功率(Pd):250mW;直流电流增益(hFE@Ic,Vce):100@100mA,1V; | | | 获取价格 |
| PBSS4350T,215 | Rubycon Corporation | 晶体管类型:NPN;集射极击穿电压(Vceo):50V;集电极电流(Ic):2A;功率(Pd):540mW;直流电流增益(hFE@Ic,Vce):300@1A,2V; | | | 获取价格 |
| 2N7002,215 | Rubycon Corporation | 类型:N沟道;漏源电压(Vdss):60V;连续漏极电流(Id):300mA;功率(Pd):830mW;导通电阻(RDS(on)@Vgs,Id):5Ω@10V,500mA; | | | 获取价格 |
| PMBFJ177,215 | Rubycon Corporation | 类型:P沟道;漏源电压(Vdss):30V;连续漏极电流(Id):50mA;功率(Pd):300mW;导通电阻(RDS(on)@Vgs,Id):-;阈值电压(Vgs(th)@Id):-; | | | 获取价格 |
| BSH202,215 | Rubycon Corporation | 类型:P沟道;漏源电压(Vdss):30V;连续漏极电流(Id):520mA;功率(Pd):417mW;导通电阻(RDS(on)@Vgs,Id):900mΩ@10V,280mA; | | | 获取价格 |
| NX2301P,215 | Rubycon Corporation | 类型:P沟道;漏源电压(Vdss):20V;连续漏极电流(Id):2A;功率(Pd):400mW；2.8W;导通电阻(RDS(on)@Vgs,Id):120mΩ@4.5V,1A; | | | 获取价格 |
| PMBF170,215 | Rubycon Corporation | 类型:N沟道;漏源电压(Vdss):60V;连续漏极电流(Id):300mA;功率(Pd):830mW;导通电阻(RDS(on)@Vgs,Id):5Ω@10V,500mA; | | | 获取价格 |
| 2N7002P,215 | Rubycon Corporation | 类型:N沟道;漏源电压(Vdss):60V;连续漏极电流(Id):360mA;功率(Pd):350mW;导通电阻(RDS(on)@Vgs,Id):1.6Ω@10V,500mA; | | | 获取价格 |
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