2SC1815

DC COMPONENTS CO., LTD. R 2SC1815 DISCRETE SEMICONDUCTORS TECHNICAL SPECIFICATIONS OF NPN EPITAXIAL PLANAR TRANSISTOR Description Designed for use in driver stage of AF amplifier general purpose amplification. TO-92 .190(4.83) .170(4.33) .190(4.83) .170(4.33) 2 Typ 2 Typ .500 Min (12.70) .022(0.56) .014(0.36) .100 Typ (2.54) .148(3.76) .132(3.36) .022(0.56) .014(0.36) o o Pinning 1 = Emitter 2 = Collector 3 = Base Absolute Maximum Ratings(TA=25oC) Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current Total Power Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC IB PD TJ TSTG Rating 60 50 5 150 50 400 +150 -55 to +150 Unit V V V mA mA mW o o 321 .050 Typ (1.27) C .050 o o 5 Typ. 5 Typ. (1.27) Typ Dimensions in inches and (millimeters) C Electrical Characteristics o Characteristic (Ratings at 25 C ambient temperature unless otherwise specified) Symbol BVCBO BVCEO BVEBO ICBO IEBO (1) Min 60 50 5 70 25 80 2% Typ - Max 100 100 0.25 1 700 3.5 Unit V V V nA nA V V MHz pF Test Conditions IC=100µA, IE=0 IC=1mA, IB=0 IE=10µA, IC=0 VCB=60V, IE=0 VEB=5V, IC=0 IC=100mA, IB=10mA IC=100mA, IB=10mA IC=2mA, VCE=6V IC=150mA, VCE=6V IC=1mA, VCE=10V VCB=10V, f=1MHz, IE=0 Collector-Base Breakdown Volatge Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Volatge Collector Cutoff Current Emitter Cutoff Current Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage DC Current Gain (1) (1) VCE(sat) VBE(sat) hFE1 hFE2 fT Cob Transition Frequency Output Capacitance (1)Pulse Test: Pulse Width 380µs, Duty Cycle Classification of hFE1 Rank Range O 70~140 Y 120~240 GR 200~400 BL 350~700