DC COMPONENTS CO., LTD.
R
BC328
DISCRETE SEMICONDUCTORS
TECHNICAL SPECIFICATIONS OF PNP EPITAXIAL PLANAR TRANSISTOR
Description
Designed for driver and output stage of audio amplifiers.
TO-92
.190(4.83) .170(4.33) .190(4.83) .170(4.33) 2 Typ 2 Typ
o o
Pinning
1 = Collector 2 = Base 3 = Emitter
Absolute Maximum Ratings(TA=25oC)
Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Total Power Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC PD TJ TSTG Rating -30 -25 -5 -800 625 +150 -55 to +150 Unit V V V mA mW
o o
.500 Min (12.70) .022(0.56) .014(0.36) .100 Typ (2.54) .148(3.76) .132(3.36) .022(0.56) .014(0.36)
.050 Typ (1.27)
321
C
.050 o o 5 Typ. 5 Typ. (1.27) Typ Dimensions in inches and (millimeters)
C
Electrical Characteristics o
Characteristic
(Ratings at 25 C ambient temperature unless otherwise specified)
Symbol BVCBO BVCEO BVEBO ICBO IEBO VCE(sat) VBE(on) hFE1 hFE2 fT Cob 380µs, Duty Cycle
Min -30 -25 -5 100 40 2%
Typ 100 12
Max -0.1 -0.1 -0.7 -1.2 630 -
Unit V V V µA µA V V MHz pF
Test Conditions IC=-100µA, IE=0 IC=-10mA, IB=0 IE=-100µA, IC=0 VCB=-25V, IE=0 VEB=-4V, IC=0 IC=-500mA, IB=-50mA IC=-300mA, VCE=-1V IC=-100mA, VCE=-1V IC=-300mA, VCE=-1V IC=-10mA, VCE=-5V, f=100MHz VCB=-10V, f=1MHz, IC=0
Collector-Base Breakdown Volatge Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Volatge Collector Cutoff Current Emitter Cutoff Current Collector-Emitter Saturation Voltage(1) Base-Emitter On Voltage(1) DC Current Gain(1) Transition Frequency Output Capacitance (1)Pulse Test: Pulse Width
Classification of hFE1
Rank Range 16 100~250 25 160~400 40 250~630
很抱歉,暂时无法提供与“BC328”相匹配的价格&库存,您可以联系我们找货
免费人工找货