DC COMPONENTS CO., LTD.
R
BF422
DISCRETE SEMICONDUCTORS
TECHNICAL SPECIFICATIONS OF NPN EPITAXIAL PLANAR TRANSISTOR
Description
Designed for video B-class power stages in TV receivers.
TO-92
Pinning
1 = Emitter 2 = Collector 3 = Base
.190(4.83) .170(4.33)
.190(4.83) .170(4.33) 2 Typ 2 Typ .500 Min (12.70) .022(0.56) .014(0.36) .100 Typ (2.54) .148(3.76) .132(3.36) .022(0.56) .014(0.36)
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Absolute Maximum Ratings(TA=25oC)
Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Total Power Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC PD TJ TSTG Rating 250 250 5 50 830 +150 -55 to +150 Unit V V V mA mW
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.050 Typ (1.27)
321
.050 o o 5 Typ. 5 Typ. (1.27) Typ Dimensions in inches and (millimeters)
C
C
Electrical Characteristics o
Characteristic
(Ratings at 25 C ambient temperature unless otherwise specified)
Symbol BVCBO BVCEO BVEBO ICBO IEBO
(1)
Min 250 250 5 50 60 2%
Typ -
Max 0.1 10 0.6 -
Unit V V V µA µA V -
Test Conditions IC=100µA IC=1mA IE=10µA VCB=200V VEB=5V IC=30mA, IB=3mA IC=25mA, VCE=20V
Collector-Base Breakdown Volatge Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Volatge Collector Cutoff Current Emitter Cutoff Current Collector-Emitter Saturation Voltage DC Current Gain
(1)
VCE(sat) hFE fT
Transition Frequency (1)Pulse Test: Pulse Width
MHz IE=10mA, VCE=10V, f=100MHz
380µs, Duty Cycle
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