BF422

UTC BF422 NPN EPITAXIAL SILICON TRANSISTOR HIGH VOLTAGE TRANSISTOR FEATURES *Collector-Emitter Voltage: VCEO=250V. *Complementary to BF423. APPLICATIONS * High voltage application. * Monitor equipment application. 1 TO-92 1: EMITTER 2: COLLECTOR 3: BASE ABSOLUTE MAXIMUM RATINGS (Ta=25°C) PARAMETERS Collector-Base Voltage Collector-Emitter Voltage Emitter-base voltage Collector current (DC) collector current (Peak) base current Collector Power dissipation Junction temperature Storage Temperature SYMBOL VCBO VCEO VEBO Ic IcP IB Pc Tj Tstg RATINGS 250 250 5 50 100 50 625 150 -65~+150 UNIT V V V mA mA mA mW °C °C ELECTRICAL CHARACTERISTICS (Ta=25°C, unless otherwise specified) PARAMETERS Collector Cut-Off Current Emitter Cut-Off Current DC current gain Collector-Emitter Saturation Voltage Base-Emitter Voltage Transition frequency Reverse Transfer Capacitance SYMBOL ICBO IEBO hFE VCE(sat) VBE fT Cre CONDITIONS VCB= 200V, IE=0 VCB=-200V, IE=0, Tj=150°C VEB= 5V, Ic=0 VCE=20V, Ic=25mA Ic= 30mA, IB= 5mA VCE=-20V,Ic=25mA VCE= 10V ,Ic= 10mA VCB= 30V, IE=0, f=1MHz MIN. TYP. MAX. 10 10 50 UNIT nA µA nA V V MHz pF 50 0.6 0.75 60 1.6 UTC UNISONIC TECHNOLOGIES CO. LTD 1 QW-R201-063,A UTC BF422 .TYPICAL NPN EPITAXIAL SILICON TRANSISTOR CHARACTERISTICS Ic-VCE(LOW VOLTAGE REGION) 500 COMMON 300 EMITTER Ta=25℃ 100 50 30 10 0 0.3 hFE-Ic COLLECTOR CURRENT, Ic (mA) COMMON 50 EMITTER Ta=25℃ 1.6 1.2 0.8 0.6 0.4 0.3 0.2 0.15 0.1 IB=0.05mA 0 DC CURRENT GAIN, hFE 60 VCE=20V 40 30 20 10 0 0 4 8 12 16 20 10 5 24 28 1 3 10 30 100 COLLECTOR-EMITTER VOLTAGE VCE (V) COLLECTOR-EMITTER SATURATING VOLTAGE, VCE(sat) 500 300 100 50 30 10 0 0.3 1 3 10 30 100 Ta=100℃ Ta=25℃ Ta=-25℃ COLLECTOR CURRENT, IC (mA) VCE(sat)-Ic COMMON EMITTER Ta=25℃ hFE-Ic COMMON EMITTER VCE=10V 2 1 0.5 0.3 0.1 0.05 0.03 0.01 -0.3 Ic/IB=10 5 2 DC CURRENT GAIN, hFE 1 3 10 30 100 COLLECTOR CURRENT, Ic (mA) COLLECTOR-EMITTER SATURATING VOLTAGE, VCE(sat) (V) 2 1 0.5 0.3 0.1 0.05 0.03 0.01 -0.3 Ta=25℃ Ta=-25℃ Ta=100℃ COLLECTOR CURRENT, Ic (mA) 50 40 -30 -20 -10 0 0 0.2 0.4 0.6 0.8 1.0 1.2 Ic-VBE COMMON EMITTER VCE=10V Ta=10 0℃ VCE(sat)-Ic COMMON EMITTER Ta=25℃ COLLECTOR CURRENT ,Ic(mA) Ta=25℃ 1 3 10 30 100 COLLECTOR CURRENT, Ic (mA) Cob,Cre-VCB 10 8 6 4 2 0 0 40 80 Cob Cre 120 160 200 240 280 IE=0 f=1MHz Ta=25℃ BQSE-EMITTER VOLTAGE, VBE (V) fT-Ic COLLECTOR OUTPUT CAPACITANCE, Cob(pF) REVERSE TRANSFER CAPACITANCE, Cre(pF) TRANSITION FREQUENCY ,fT(MHz) 500 COMMON EMITTER 300 Ta=25℃ VCE=20V 100 50 30 VCE=10V 1 3 10 30 10 0.3 COLLECTOR-BASE VOLTAGE, VCB(V) Collector Current, Ic (mA) UTC UNISONIC TECHNOLOGIES CO. LTD Ta=-25℃ 2 QW-R201-063,A UTC BF422 NPN EPITAXIAL SILICON TRANSISTOR Pc-Ta Safe Operating Area 200 100 Collector Current, Ic (mA) COLLECTOR POWER DISSIPATION, Pc (mW) 1000 800 600 400 200 0 Ic MAX.(PULSED)* 10 0m RA TI ON 1m s s 50 30 10 DC OP E 0 40 80 120 160 200 Ambient Temperature, Ta(℃) 5 *SINGLE NONREPETITIVE 3 PULSE Ta=25℃ CURVES MUST BE DERATED LINEARLY 1 WITH INCREASE IN TEMPERATURE 0.5 100 10 30 300 3 Collector Emitter Voltage, VCE(V) UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. m 10 s UTC UNISONIC TECHNOLOGIES CO. LTD 3 QW-R201-063,A