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1N5821-T

1N5821-T

  • 厂商:

    DIODES

  • 封装:

  • 描述:

    1N5821-T - 3.0A SCHOTTKY BARRIER RECTIFIERS - Diodes Incorporated

  • 数据手册
  • 价格&库存
1N5821-T 数据手册
1N5820 - 1N5822 3.0A SCHOTTKY BARRIER RECTIFIERS Features · · · · · · · Schottky Barrier Chip Guard Ring Die Construction for Transient Protection Low Power Loss, High Efficiency High Surge Capability High Current Capability and Low Forward Voltage Drop For Use in Low Voltage, High Frequency Inverters, Free Wheeling, and Polarity Protection Application Lead Free Finish, RoHS Compliant (Note 4) A B A C D Mechanical Data · · · · · · · · · Case: DO-201AD Case Material: Molded Plastic. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020C Terminals: Finish - Bright Tin. Plated Leads Solderable per MIL-STD-202, Method 208 Polarity: Cathode Band Mounting Position: Any Marking: Type Number Ordering Information: See Last Page Weight: 1.1 grams (approximate) @ TA = 25°C unless otherwise specified Dim A B C D DO-201AD Min 25.40 7.20 1.20 4.80 Max ¾ 9.50 1.30 5.30 All Dimensions in mm Maximum Ratings and Electrical Characteristics Single phase, half wave, 60Hz, resistive or inductive load. For capacitive load, derate current by 20%. Characteristic Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage RMS Reverse Voltage Average Rectified Output Current (Note 1) @ TL = 95°C Non-Repetitive Peak Forward Surge Current 8.3ms single half sine-wave superimposed on rated load (JEDEC Method) @ TL = 75°C Forward Voltage (Note 2) Peak Reverse Current at Rated DC Blocking Voltage (Note 2) Typical Thermal Resistance (Note 3) Operating and Storage Temperature Range Notes: Symbol VRRM VRWM VR VR(RMS) IO IFSM VFM IRM RqJA RqJL Tj, TSTG 1N5820 20 14 1N5821 30 21 3.0 80 1N5822 40 28 Unit V V A A @ IF = 3.0A @ IF = 9.4A @ TA = 25°C @ TA = 100°C 0.475 0.850 0.500 0.900 2.0 20 40 10 -65 to +125 0.525 0.950 V mA °C/W °C 1. Measured at ambient temperature at a distance of 9.5mm from the case. 2. Short duration pulse test used to minimize self-heating effect. 3. Thermal resistance from junction to lead vertical P.C.B. mounted, 0.500" (12.7mm) lead length with 2.5 x 2.5" (63.5 x 63.5mm) copper pad. 4. RoHS revision 13.2.2003. Glass and High Temperature Solder Exemptions Applied, see EU Directive Annex Notes 5 and 7. DS23003 Rev. 8 - 2 1 of 2 www.diodes.com 1N5820-1N5822 ã Diodes Incorporated I(AV), AVERAGE OUTPUT CURRENT (A) Single Phase Half-Wave 60 Hz Resistive or Inductive Load 9.5mm Lead Length IF, INSTANTANEOUS FORWARD CURRENT (A) 4 30 3 10 2 1.0 1 0 10 50 100 150 TL, LEAD TEMPERATURE (ºC) Fig. 1 Forward Current Derating Curve 0.1 0.1 0.3 0.5 0.7 0.9 1.1 VF, INSTANTANEOUS FORWARD VOLTAGE (V) Fig. 2 Typical Forward Voltage Characteristics IFSM, PEAK FORWARD SURGE CURRENT (A) 100 1000 Tj = 25ºC f = 1MHz Vsig = 50m Vp-p 60 CT, TOTAL CAPACITANCE (pF) 80 100 40 20 8.3ms Single Half Sine-Wave JEDEC Method TJ = TJ(max) 0 1 10 NUMBER OF CYCLES AT 60 Hz Fig. 3 Peak Forward Surge Current 100 10 0.1 1.0 10 100 VR, REVERSE VOLTAGE (V) Fig. 4 Typical Total Capacitance Ordering Information Device 1N5820-B 1N5820-T 1N5821-B 1N5821-T 1N5822-B 1N5822-T Notes: (Note 5) Packaging DO-201AD DO-201AD DO-201AD DO-201AD DO-201AD DO-201AD Shipping 500 Bulk 1.2K/Tape & Reel, 13-inch 500 Bulk 1.2K/Tape & Reel, 13-inch 500 Bulk 1.2K/Tape & Reel, 13-inch 5. For packaging details, visit our website at http://www.diodes.com/datasheets/ap2008.pdf DS23003 Rev. 8 - 2 2 of 2 www.diodes.com 1N5820-1N5822
1N5821-T 价格&库存

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