BSS8402DW_08

BSS8402DW COMPLEMENTARY PAIR ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Please click here to visit our online spice models database. Features • • • • • • • • • Low On-Resistance Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Low Input/Output Leakage Complementary Pair Lead Free/RoHS Compliant (Note 2) "Green" Device (Note 3 and 4) Qualified to AEC-Q101 Standards for High Reliability Mechanical Data • • • • • • • • • SOT-363 NEW PRODUCT Case: SOT-363 Case Material: Molded Plastic. “Green” Molding Compound. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020D Terminals: Solderable per MIL-STD-202, Method 208 Lead Free Plating (Matte Tin Finish annealed over Alloy 42 leadframe). Terminal Connections: See Diagram Marking Information: See Page 5 Ordering Information: See Page 5 Weight: 0.008 grams (approximate) D1 G2 S2 Q1 Q2 S1 G1 D2 TOP VIEW TOP VIEW Internal Schematic Maximum Ratings – Total Device Characteristic Power Dissipation (Note 1) Thermal Resistance, Junction to Ambient Operating and Storage Temperature Range @TA = 25°C unless otherwise specified Symbol PD RθJA TJ, TSTG Value 200 625 -55 to +150 Units mW °C/W °C Maximum Ratings N-CHANNEL – Q1, 2N7002 Section Characteristic Drain-Source Voltage Drain-Gate Voltage RGS ≤ 1.0MΩ Gate-Source Voltage Drain Current (Note 1) Continuous Pulsed Continuous Continuous @ 100°C Pulsed Symbol VDSS VDGR VGSS ID @TA = 25°C unless otherwise specified Value 60 60 ±20 ±40 115 73 800 Units V V V mA Maximum Ratings P-CHANNEL – Q2, BSS84 Section Characteristic Drain-Source Voltage Drain-Gate Voltage RGS ≤ 20KΩ Gate-Source Voltage Drain Current (Note 1) Notes: @TA = 25°C unless otherwise specified Value -50 -50 ±20 -130 Units V V V mA Continuous Continuous Symbol VDSS VDGR VGSS ID 1. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout document AP02001, which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf. 2. No purposefully added lead. 3. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php. 4. Product manufactured with Date Code UO (week 40, 2007) and newer are built with Green Molding Compound. Product manufactured prior to Date Code UO are built with Non-Green Molding Compound and may contain Halogens or Sb2O3 Fire Retardants. BSS8402DW Document number: DS30380 Rev. 12 - 2 1 of 5 www.diodes.com June 2008 © Diodes Incorporated BSS8402DW Electrical Characteristics N-CHANNEL – Q1, 2N7002 Section Characteristic OFF CHARACTERISTICS (Note 5) Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current @ TC = 25°C @ TC = 125°C Symbol BVDSS IDSS IGSS VGS(th) @ Tj = 25°C @ Tj = 125°C RDS (ON) ID(ON) gFS Ciss Coss Crss tD(ON) tD(OFF) Min 60 ⎯ ⎯ 1.0 ⎯ 0.5 80 ⎯ ⎯ ⎯ ⎯ ⎯ Typ 70 ⎯ ⎯ ⎯ 3.2 4.4 1.0 ⎯ 22 11 2.0 7.0 11 @TA = 25°C unless otherwise specified Unit V µA nA V Ω A mS pF pF pF ns ns Test Condition VGS = 0V, ID = 10μA VDS = 60V, VGS = 0V VGS = ±20V, VDS = 0V VDS = VGS, ID = 250μA VGS = 5.0V, ID = 0.05A VGS = 10V, ID = 0.5A VGS = 10V, VDS = 7.5V VDS =10V, ID = 0.2A Max ⎯ 1.0 500 ±10 2.5 7.5 13.5 ⎯ ⎯ 50 25 5.0 20 20 NEW PRODUCT Gate-Body Leakage ON CHARACTERISTICS (Note 5) Gate Threshold Voltage Static Drain-Source On-Resistance On-State Drain Current Forward Transconductance DYNAMIC CHARACTERISTICS Input Capacitance Output Capacitance Reverse Transfer Capacitance SWITCHING CHARACTERISTICS Turn-On Delay Time Turn-Off Delay Time VDS = 25V, VGS = 0V, f = 1.0MHz VDD = 30V, ID = 0.2A, RL = 150Ω, VGEN = 10V, RGEN = 25Ω Electrical Characteristics P-CHANNEL – Q2, BSS84 Section Characteristic OFF CHARACTERISTICS (Note 5) Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body Leakage ON CHARACTERISTICS (Note 5) Gate Threshold Voltage Static Drain-Source On-Resistance Forward Transconductance DYNAMIC CHARACTERISTICS Input Capacitance Output Capacitance Reverse Transfer Capacitance SWITCHING CHARACTERISTICS Turn-On Delay Time Turn-Off Delay Time Notes: 5. Short duration pulse test used to minimize self-heating effect. @ TA = 25°C unless otherwise specified Unit V µA µA nA nA V Ω S pF pF pF ns ns Test Condition VGS = 0V, ID = -250µA VDS = -50V, VGS = 0V, TJ = 25°C VDS = -50V, VGS = 0V, TJ = 125°C VDS = -25V, VGS = 0V, TJ = 25°C VGS = ±20V, VDS = 0V VDS = VGS, ID = -1mA VGS = -5V, ID = -0.100A VDS = -25V, ID = -0.1A Symbol BVDSS IDSS IGSS VGS(th) RDS (ON) gFS Ciss Coss Crss tD(ON) tD(OFF) Min -50 ⎯ ⎯ ⎯ ⎯ -0.8 ⎯ .05 ⎯ ⎯ ⎯ ⎯ ⎯ Typ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ 10 18 Max ⎯ -15 -60 -100 ±10 -2.0 10 ⎯ 45 25 12 ⎯ ⎯ VDS = -25V, VGS = 0V, f = 1.0MHz VDD = -30V, ID = -0.27A, RGEN = 50Ω, VGS = -10V BSS8402DW Document number: DS30380 Rev. 12 - 2 2 of 5 www.diodes.com June 2008 © Diodes Incorporated BSS8402DW N-CHANNEL – 2N7002 SECTION 1.0 ID, DRAIN-SOURCE CURRENT (A) 7 Tj = 25°C 0.8 RDS(ON), STATIC DRAIN-SOURCE ON-RESISTANCE (Ω) 6 5 4 3 2 1 0 N EW PRODUCT 0.6 0.4 0.2 0 0 1 2 3 4 VDS, DRAIN-SOURCE VOLTAGE (V) Fig. 1 On-Region Characteristics 5 0 0.4 0.6 0.8 ID, DRAIN CURRENT (A) Fig. 2 On-Resistance vs. Drain Current 0.2 1.0 3.0 RDS(ON), STATIC DRAIN-SOURCE ON-RESISTANCE (Ω) 6 2.5 RDS(ON), STATIC DRAIN-SOURCE ON-RESISTANCE (Ω) 5 4 2.0 3 2 1.5 VGS = 10V, ID = 200mA 1 1.0 -55 -30 -5 20 45 70 95 120 145 Tj, JUNCTION TEMPERATURE (°C) Fig. 3 On-Resistance vs. Junction Temperature 0 0 2 4 6 8 10 12 14 16 18 VGS, GATE TO SOURCE VOLTAGE (V) Fig. 4 On-Resistance vs. Gate-Source Voltage 10 9 VGS, GATE-SOURCE CURRENT (V) 8 7 6 5 4 3 2 1 0 0 0.4 0.8 0.6 ID, DRAIN CURRENT (A) Fig. 5 Typical Transfer Characteristics 0.2 1 VDS = 10V 250 Pd, POWER DISSIPATION (mW) 200 150 100 50 0 50 75 100 125 150 175 200 25 TA, AMBIENT TEMPERATURE (°C) Fig. 6 Max Power Dissipation vs. Ambient Temperature 0 BSS8402DW Document number: DS30380 Rev. 12 - 2 3 of 5 www.diodes.com June 2008 © Diodes Incorporated BSS8402DW P-CHANNEL – BSS84 SECTION -600 T A = 25°C -1.0 ID, DRAIN-SOURCE CURRENT (mA) -500 ID, DRAIN CURRENT (A) -0.8 N EW PRODUCT -400 -0.6 -300 -0.4 -200 -100 -0.2 0 -2 -3 -4 -5 VDS, DRAIN-SOURCE (V) Fig. 7 Drain-Source Current vs. Drain-Source Voltage 10 9 RDS(ON), STATIC DRAIN-SOURCE ON-RESISTANCE (Ω) -0.0 0 -1 0 -5 -1 -2 -3 -4 -6 -7 -8 VGS, GATE-TO-SOURCE VOLTAGE (V) Fig. 8 Drain Current vs. Gate-Source Voltage 15 VGS = -10V ID = -0.13A 7 6 5 4 3 2 TA = 125° C RDS, ON-RESISTANCE (Ω) TA = 25° C 8 12 9 6 3 1 0 0 -1 -2 -4 -5 -3 VGS, GATE TO SOURCE (V) Fig. 9 On-Resistance vs. Gate-Source Voltage 0 -50 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (°C) Fig. 10 On-Resistance vs. Junction Temperature -25 25.0 20.0 RDS, ON-RESISTANCE (Ω) VGS = -3.5V VGS = -3V 15.0 VGS = -5V 10.0 VGS = -4V VGS = -6V 5.0 VGS = -8V VGS = -10V 0.0 -0.0 -0.4 -0.6 -0.8 ID, DRAIN CURRENT (A) Fig. 11 On-Resistance vs. Drain Current -0.2 1.0 BSS8402DW Document number: DS30380 Rev. 12 - 2 4 of 5 www.diodes.com June 2008 © Diodes Incorporated BSS8402DW Ordering Information Part Number BSS8402DW-7-F Notes: (Note 6) Case SOT-363 Packaging 3000/Tape & Reel 6. For packaging details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf. Marking Information N EW PRODUCT KNP = Product Type Marking Code YM = Date Code Marking Y = Year (ex: R = 2004) M = Month (ex: 9 = September) KNP Date Code Key Year Code Month Code 2003 P Jan 1 2004 R Feb 2 Mar 3 2005 S Apr 4 YM 2006 T 2007 U Jun 6 2008 V Jul 7 2009 W Aug 8 Sep 9 2010 X Oct O 2011 Y Nov N 2012 Z Dec D May 5 Package Outline Dimensions A BC H K M J D F L SOT-363 Dim Min Max A 0.10 0.30 B 1.15 1.35 C 2.00 2.20 D 0.65 Nominal F 0.40 0.45 H 1.80 2.20 J 0 0.10 K 0.90 1.00 L 0.25 0.40 M 0.10 0.22 0° 8° α All Dimensions in mm Suggested Pad Layout E E Z G C Dimensions Value (in mm) Z 2.5 G 1.3 X 0.42 Y 0.6 C 1.9 E 0.65 Y X IMPORTANT NOTICE Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to any product herein. Diodes Incorporated does not assume any liability arising out of the application or use of any product described herein; neither does it convey any license under its patent rights, nor the rights of others. The user of products in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on our website, harmless against all damages. LIFE SUPPORT Diodes Incorporated products are not authorized for use as critical components in life support devices or systems without the expressed written approval of the President of Diodes Incorporated. BSS8402DW Document number: DS30380 Rev. 12 - 2 5 of 5 www.diodes.com June 2008 © Diodes Incorporated