BSS8402DW_1

SPICE MODEL: BSS8402DW BSS8402DW COMPLEMENTARY PAIR ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Features NEW PRODUCT · · · · · · · Low On-Resistance: RDS(ON) Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Low Input/Output Leakage Complementary Pair Lead Free/RoHS Compliant (Note 2) S1 G1 D2 D1 A G2 S2 SOT-363 Dim A BC Min 0.10 1.15 2.00 0.30 1.80 ¾ 0.90 0.25 0.10 0° Max 0.30 1.35 2.20 0.40 2.20 0.10 1.00 0.40 0.25 8° B C D F M Mechanical Data · · · · · · · · Case: SOT-363 Case Material: Molded Plastic. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020C Terminals: Solderable per MIL-STD-202, Method 208 Lead Free Plating (Matte Tin Finish annealed over Alloy 42 leadframe). Please see Ordering Information, Note 5, on Page 5 Terminal Connections: See Diagram Marking: KNP (See Page 5) Weight: 0.008 grams (approx.) S1 G H K 0.65 Nominal H J K L M a J D F L TOP VIEW D1 G2 S2 Q1 Q2 All Dimensions in mm G1 D2 Maximum Ratings - Total Device Characteristic Power Dissipation (Note 1) Thermal Resistance, Junction to Ambient Operating and Storage Temperature Range @ TA = 25°C unless otherwise specified Symbol Pd RqJA Tj, TSTG Value 200 625 -55 to +150 Units mW °C/W °C Maximum Ratings N-CHANNEL - Q1, 2N7002 Section Characteristic Drain-Source Voltage Drain-Gate Voltage RGS £ 1.0MW Gate-Source Voltage Drain Current (Note 1) Continuous Pulsed Continuous Continuous @ 100°C Pulsed Symbol VDSS VDGR VGSS ID @ TA = 25°C unless otherwise specified Value 60 60 ±20 ±40 115 73 800 @ TA = 25°C unless otherwise specified Value -50 -50 ±20 -130 Units V V V mA Units V V V mA Maximum Ratings P-CHANNEL - Q2, BSS84 Section Characteristic Drain-Source Voltage Drain-Gate Voltage RGS £ 20KW Gate-Source Voltage Drain Current (Note 1) Continuous Continuous Symbol VDSS VDGR VGSS ID Note: 1. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout document AP02001, which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf. 2. No purposefully added lead. DS30380 Rev. 8 - 2 1 of 5 www.diodes.com BSS8402DW ã Diodes Incorporated Electrical Characteristics N-CHANNEL - Q1, 2N7002 Section @ TA = 25°C unless otherwise specified Unit V µA nA V W A mS pF pF pF ns ns VDD = 30V, ID = 0.2A, RL = 150W, VGEN = 10V, RGEN = 25W VDS = 25V, VGS = 0V f = 1.0MHz Test Condition VGS = 0V, ID = 10mA VDS = 60V, VGS = 0V VGS = ±20V, VDS = 0V VDS = VGS, ID = 250mA VGS = 5.0V, ID = 0.05A VGS = 10V, ID = 0.5A VGS = 10V, VDS = 7.5V VDS =10V, ID = 0.2A NEW PRODUCT Characteristic OFF CHARACTERISTICS (Note 3) Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body Leakage ON CHARACTERISTICS (Note 3) Gate Threshold Voltage Static Drain-Source On-Resistance On-State Drain Current Forward Transconductance DYNAMIC CHARACTERISTICS Input Capacitance Output Capacitance Reverse Transfer Capacitance SWITCHING CHARACTERISTICS Turn-On Delay Time Turn-Off Delay Time @ Tj = 25°C @ Tj = 125°C @ TC = 25°C @ TC = 125°C Symbol BVDSS IDSS IGSS VGS(th) RDS (ON) ID(ON) gFS Ciss Coss Crss tD(ON) tD(OFF) Min 60 ¾ ¾ 1.0 ¾ 0.5 80 ¾ ¾ ¾ ¾ ¾ Typ 70 ¾ ¾ ¾ 3.2 4.4 1.0 ¾ 22 11 2.0 7.0 11 Max ¾ 1.0 500 ±10 2.5 7.5 13.5 ¾ ¾ 50 25 5.0 20 20 Electrical Characteristics P-CHANNEL - Q2, BSS84 Section Characteristic OFF CHARACTERISTICS (Note 3) Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body Leakage ON CHARACTERISTICS (Note 3) Gate Threshold Voltage Static Drain-Source On-Resistance Forward Transconductance DYNAMIC CHARACTERISTICS Input Capacitance Output Capacitance Reverse Transfer Capacitance SWITCHING CHARACTERISTICS Turn-On Delay Time Turn-Off Delay Time tD(ON) tD(OFF) ¾ ¾ 10 18 ¾ ¾ Ciss Coss Crss ¾ ¾ ¾ ¾ ¾ ¾ 45 25 12 VGS(th) RDS (ON) gFS -0.8 ¾ .05 ¾ ¾ ¾ -2.0 10 ¾ BVDSS IDSS IGSS -50 ¾ ¾ ¾ ¾ ¾ ¾ ¾ ¾ ¾ ¾ -15 -60 -100 ±10 Symbol Min Typ Max @ TA = 25°C unless otherwise specified Unit V µA µA nA nA V W S pF pF pF ns ns VDD = -30V, ID = -0.27A, RGEN = 50W, VGS = -10V VDS = -25V, VGS = 0V f = 1.0MHz Test Condition VGS = 0V, ID = -250µA VDS = -50V, VGS = 0V, TJ = 25°C VDS = -50V, VGS = 0V, TJ = 125°C VDS = -25V, VGS = 0V, TJ = 25°C VGS = ±20V, VDS = 0V VDS = VGS, ID = -1mA VGS = -5V, ID = -0.100A VDS = -25V, ID = -0.1A Note: 3. Short duration test pulse used to minimize self-heating effect. DS30380 Rev. 8 - 2 2 of 5 www.diodes.com BSS8402DW N-CHANNEL - 2N7002 SECTION 1.0 VGS = 10V 9.0V 8.0V 7.0V 6.5V 6.0V 5.5V 5.0V 4.5V 4.0V 3.5V 3.0V 2.5V 2.1V 7 10V Tj = 25° C NEW PRODUCT ID, DRAIN-SOURCE CURRENT (A) 6 5 5.5V VGS = 5.0V 0.8 0.6 4 5.0V 0.4 3 VGS = 10V 2 0.2 1 2.1V 0 0 1 2 3 4 5 0 0 0.2 0.4 0.6 0.8 1.0 ID, DRAIN CURRENT (A) Fig. 2 On-Resistance vs Drain Current VDS, DRAIN-SOURCE VOLTAGE (V) Fig. 1 On-Region Characteristics 3.0 6 5 2.5 4 ID = 50mA ID = 500mA 2.0 3 2 1.5 VGS = 10V, ID = 200mA 1 1.0 -55 0 -30 -5 20 45 70 95 120 145 0 2 4 6 8 10 12 14 16 18 Tj, JUNCTION TEMPERATURE (° C) Fig. 3 On-Resistance vs Junction Temperature 10 VGS, GATE SOURCE CURRENT (V) Pd, POWER DISSIPATION (mW) VGS, GATE TO SOURCE VOLTAGE (V) Fig. 4 On-Resistance vs. Gate-Source Voltage 250 9 8 7 6 5 4 3 2 1 0 0 VDS = 10V 200 TA = +125°C TA = +75°C 150 100 TA = -55°C TA = +25°C 50 0 0 25 50 75 100 125 150 175 200 0.2 0.4 0.6 0.8 1 TA, AMBIENT TEMPERATURE (° C) Fig. 6 Max Power Dissipation vs. Ambient Temperature ID, DRAIN CURRENT (A) Fig. 5 Typical Transfer Characteristics DS30380 Rev. 8 - 2 3 of 5 www.diodes.com BSS8402DW P-CHANNEL - BSS84 SECTION -600 TA = 25° C -1.0 VGS = -5V NEW PRODUCT ID, DRAIN SOURCE CURRENT (mA) -500 -0.8 -400 ID, DRAIN CURRENT (A) -4.5V TA = -55° C -0.6 TA = 25° C TA = 125° C -300 -3.5V -0.4 -200 -3.0V -100 -2.5V -0.2 0 0 -1 -2 -3 -4 -5 VDS, DRAIN SOURCE (V) Fig. 7, Drain Source Current vs. Drain Source Voltage -0.0 0 -1 -2 -3 -4 -5 -6 -7 -8 VGS, GATE-TO-SOURCE VOLTAGE (V) Fig. 8, Drain Current vs. Gate Source Voltage 15 VGS = -10V ID = -0.13A 12 10 9 8 7 6 5 4 3 2 TA = 125° C 9 6 3 1 0 0 -1 -2 TA = 25° C -3 -4 -5 0 -50 -25 0 25 50 75 100 125 150 VGS, GATE TO SOURCE (V) Fig. 9, On Resistance vs. Gate Source Voltage 25.0 TJ, JUNCTION TEMPERATURE (°C) Fig. 10, On-Resistance vs. Junction Temperature 20.0 VGS = -3.5V VGS = -3V VGS = -4.5V VGS = -5V VGS = -4V 15.0 10.0 VGS = -6V 5.0 VGS = -8V VGS = -10V 0.0 -0.0 -0.2 -0.4 -0.6 -0.8 1.0 ID, DRAIN CURRENT (A) Fig. 11, On-Resistance vs. Drain Current DS30380 Rev. 8 - 2 4 of 5 www.diodes.com BSS8402DW Ordering Information (Note 4) Packaging SOT-363 Shipping 3000/Tape & Reel NEW PRODUCT Device BSS8402DW-7-F Notes: 4. For Packaging Details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf. Marking Information KNP KNP = Product Type Marking Code YM = Date Code Marking Y = Year ex: R = 2004 M = Month ex: 9 = September Date Code Key Year Code Month Code Jan 1 Feb 2 2003 P March 3 2004 R Apr 4 May 5 2005 S Jun 6 Jul 7 2006 T Aug 8 2007 U Sep 9 Oct O 2008 V Nov N 2009 W Dec D IMPORTANT NOTICE Diodes, Inc. and its subsidiaries reserve the right to make changes without further notice to any product herein to make corrections, modifications, enhancements, improvements, or other changes. Diodes, Inc. does not assume any liability arising out of the application or use of any product described herein; neither does it convey any license under its patent rights, nor the rights of others. The user of products in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on our website, harmless against all damages. LIFE SUPPORT The products located on our website at www.diodes.com are not recommended for use in life support systems where a failure or malfunction of the component may directly threaten life or cause injury without the express written approval of Diodes Incorporated. DS30380 Rev. 8 - 2 5 of 5 www.diodes.com YM BSS8402DW