0
登录后你可以
  • 下载海量资料
  • 学习在线课程
  • 观看技术视频
  • 写文章/发帖/加入社区
会员中心
创作中心
发布
  • 发文章

  • 发资料

  • 发帖

  • 提问

  • 发视频

创作活动
MMBT2222AT

MMBT2222AT

  • 厂商:

    DIODES

  • 封装:

  • 描述:

    MMBT2222AT - NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR - Diodes Incorporated

  • 数据手册
  • 价格&库存
MMBT2222AT 数据手册
SPICE MODEL: MMBT2222AT Lead-free MMBT2222AT NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR Features · · · · Epitaxial Planar Die Construction Complementary PNP Type Available (MMBT2907AT) Ultra-Small Surface Mount Package Lead Free/RoHS Compliant (Note 2) A C TOP VIEW B G H K M E BC SOT-523 Dim A B C D G H J L N Min 0.15 0.75 1.45 ¾ 0.90 1.50 0.00 0.60 0.10 0.10 0.45 0° Max 0.30 0.85 1.75 ¾ 1.10 1.70 0.10 0.80 0.30 0.20 0.65 8° Typ 0.22 0.80 1.60 0.50 1.00 1.60 0.05 0.75 0.22 0.12 0.50 ¾ Mechanical Data · · · · · · · · · Case: SOT-523 Case Material: Molded Plastic. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020C Terminals: Solderable per MIL-STD-202, Method 208 Lead Free Plating (Matte Tin Finish annealed over Alloy 42 leadframe). Terminal Connections: See Diagram Marking (See Page 4): 1P Ordering & Date Code Information, See Page 4 Weight: 0.002 grams (approximate) J D K L M N a C All Dimensions in mm B E Maximum Ratings Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage @ TA = 25°C unless otherwise specified Symbol VCBO VCEO VEBO IC Pd RqJA Tj, TSTG Value 75 40 6.0 600 150 833 -55 to +150 Unit V V V mA mW °C/W °C Characteristic Collector Current - Continuous Power Dissipation (Note 1) Thermal Resistance, Junction to Ambient (Note 1) Operating and Storage Temperature Range Notes: 1. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout document AP02001, which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf. 2. No purposefully added lead DS30268 Rev. 8 - 2 1 of 4 www.diodes.com MMBT2222AT ã Diodes Incorporated Electrical Characteristics Characteristic OFF CHARACTERISTICS (Note 3) Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cutoff Current Base Cutoff Current ON CHARACTERISTICS (Note 3) @ TA = 25°C unless otherwise specified Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICEX IBL Min 75 40 6.0 ¾ ¾ 35 50 75 100 40 ¾ 0.6 ¾ ¾ — 300 0.25 ¾ 75 25 ¾ Max ¾ ¾ ¾ 10 20 ¾ ¾ ¾ ¾ ¾ 0.3 1.0 1.2 2.0 8 30 ¾ 1.25 4.0 375 200 4.0 X Unit V V V nA nA Test Condition IC = 10mA, IE = 0 IC = 10mA, IB = 0 IE = 10mA, IC = 0 VCE = 60V, VEB(OFF) = 3.0V VCE = 60V, VEB(OFF) = 3.0V IC = 100mA, VCE = IC = 1.0mA, VCE = IC = 10mA, VCE = IC = 150mA, VCE = IC = 500mA, VCE = 10V 10V 10V 10V 10V DC Current Gain hFE ¾ Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage SMALL SIGNAL CHARACTERISTICS Output Capacitance Input Capacitance Current Gain-Bandwidth Product Input Impedance Voltage Feedback Ratio Small-Signal Current Gain Output Admittance Noise Figure SWITCHING CHARACTERISTICS Delay Time Rise Time Storage Time Fall Time Notes: VCE(SAT) VBE(SAT) V V IC = 150mA, IB = 15mA IC = 500mA, IB = 50mA IC = 150mA, IB = 15mA IC = 500mA, IB = 50mA VCB = 10V, f = 1.0MHz, IE = 0 VEB = 0.5V, f = 1.0MHz, IC = 0 VCE = 20V, IC = 20mA, f = 100MHz VCE = 10 Vdc, IC = 10 mAdc, f = 1.0kHz VCE = 10 Vdc, IC = 10 mAdc, f = 1.0kHz VCE = 10 Vdc, IC = 10 mAdc, f = 1.0kHz VCE = 10 Vdc, IC = 10 mAdc, f = 1.0kHz VCE = 10 Vdc, IC = 100 mAdc, RS = 1.0 k ohms, f = 1.0kHz Cobo Cibo fT hie hre hfe hoe NF pF pF MHz kW 10-4 ¾ mS dB td tr ts tf ¾ ¾ ¾ ¾ 10 25 225 60 ns ns ns ns VCC = 30V, IC = 150mA, VBE(off) = - 0.5V, IB1 = 15mA VCC = 30V, IC = 150mA, IB1 = IB2 = 15mA 3. Short duration pulse test used to minimize self-heating effect. 250 (see Note 1) 1000 Pd, POWER DISSIPATION (mW) hFE, DC CURRENT GAIN 200 TA = 125°C 150 100 TA = -25°C TA = +25°C 100 10 50 VCE = 1.0V 0 0 40 80 120 160 200 TA, AMBIENT TEMPERATURE (°C) Fig. 1, Power Derating Curve 1 0.1 1 10 100 1000 IC, COLLECTOR CURRENT (mA) Fig. 2 Typical DC Current Gain vs Collector Current DS30268 Rev. 8 - 2 2 of 4 www.diodes.com MMBT2222AT 35 VCE, COLLECTOR-EMITTER VOLTAGE (V) 2.0 f = 1MHz 30 25 CAPACITANCE (pF) 20 15 10 5 0 Cibo 1.8 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0 0.001 IC = 30mA IC = 1mA IC = 10mA IC = 100mA IC = 300mA Cobo 0 2 4 6 8 10 12 14 16 18 20 0.01 0.1 1 10 100 VR, REVERSE VOLTAGE (V) Fig. 3 Typical Capacitance Characteristics IB, BASE CURRENT (mA) Fig. 4 Typical Collector Saturation Region 0.5 1.0 VBE(ON), BASE EMITTER VOLTAGE (V) IC IB = 10 VCE(SAT), COLLECTOR TO EMITTER SATURATION VOLTAGE (V) 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 VCE = 5V TA = -50°C TA = 25°C 0.4 TA = 25°C 0.3 TA = 150°C 0.2 TA = 150°C 0.1 TA = -50°C 0 1 10 100 1000 IC, COLLECTOR CURRENT (mA) Fig. 5 Collector Emitter Saturation Voltage vs. Collector Current 1000 1 10 100 IC, COLLECTOR CURRENT (mA) Fig. 6 Base Emitter Voltage vs. Collector Current fT, GAIN BANDWIDTH PRODUCT (MHz) VCE = 5V 100 10 1 10 100 IC, COLLECTOR CURRENT (mA) Fig. 7 Gain Bandwidth Product vs. Collector Current 1 DS30268 Rev. 8 - 2 3 of 4 www.diodes.com MMBT2222AT Ordering Information Device (Note 4) Packaging SOT-523 Shipping 3000/Tape & Reel MMBT2222AT-7-F Notes: 4. For Packaging Details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf. Marking Information 1PYM 1P = Product Type Marking Code YM = Date Code Marking Y = Year (ex: N = 2002) M = Month (ex: 9 = September) Date Code Key Year Code 1998 J Month Code 1999 K 2000 L Jan 1 2001 M Feb 2 2002 N March 3 2003 P Apr 4 2004 R May 5 2005 S Jun 6 2006 T Jul 7 2007 U Aug 8 2008 V Sep 9 2009 W Oct O 2010 X 2011 Y Nov N 2012 Z Dec D IMPORTANT NOTICE Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to any product herein. Diodes Incorporated does not assume any liability arising out of the application or use of any product described herein; neither does it convey any license under its patent rights, nor the rights of others. The user of products in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on our website, harmless against all damages. LIFE SUPPORT Diodes Incorporated products are not authorized for use as critical components in life support devices or systems without the expressed written approval of the President of Diodes Incorporated. DS30268 Rev. 8 - 2 4 of 4 www.diodes.com MMBT2222AT
MMBT2222AT 价格&库存

很抱歉,暂时无法提供与“MMBT2222AT”相匹配的价格&库存,您可以联系我们找货

免费人工找货
MMBT2222A-TP
  •  国内价格
  • 20+0.08601
  • 200+0.081
  • 500+0.076
  • 1000+0.071
  • 3000+0.0685
  • 6000+0.065

库存:376

MMBT2222AT-TP
  •  国内价格
  • 1+0.2025
  • 100+0.189
  • 300+0.1755
  • 500+0.162
  • 2000+0.15525
  • 5000+0.1512

库存:1340

MMBT2222ATT1G
  •  国内价格
  • 1+0.4662
  • 30+0.45023
  • 100+0.4183
  • 500+0.38637
  • 1000+0.37041

库存:108