MMBT2222AT

MMBT2222AT Plastic-Encapsulate Transistors NPN Silicon COLLECTOR 3 3 1 2 1 BASE 2 SOT-523(SC-75) EMITTER MAXIMUM RATINGS Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current-Continuous Symbol VCEO VCBO VEBO IC Value 40 75 6.0 600 Unit Vdc Vdc Vdc mAdc THERMAL CHARACTERISTICS Characteristics Total Device Dissipation FR-5 Board (1) TA=25 C Thermal Resistance, Junction to Ambient Junction and Storage, Temperature Symbol PD RθJA TJ,Tstg Max 150 833 -55 to +150 Unit mW C/W C DEVICE MARKING MMBT2222AT=1P ELECTRICAL CHARACTERISTICS Characteristics Symbol Min Max Unit OFF CHARACTERISTICS Collector-Emitter Breakdown Voltage (IC= 10 mAdc, IB=0) (2) Collector-Base Breakdown Voltage (IC= 10 µAdc, IE=0) Emitter-Base Breakdown Voltage (IE= -10 µAdc, IC=0) Collector Cutoff Current (VCB= 70 Vdc, IE=0) Emitter Cutoff Current (VEB= 3 Vdc, IC=0) 1.FR-5=1.0 x 0.75 x 0.062 in _ 2. Pulse Test:Pulse Width=300 us, Duty Cycle < 2.0% V(BR)CEO V(BR)CBO V(BR)EBO ICBO IEBO 40 75 6.0 0.1 0.1 Vdc Vdc Vdc nAdc nAdc WEITRON http://www.weitron.com.tw MMBT2222AT ELECTRICAL CHARACTERISTICS ( Ta=25 C unless otherwise noted) (Countinued) Characteristics Symbol Min Typ Max Unit ON CHARACTERISTICS (1) DC Current Gain (I C = 0.1 mAdc, VCE= 10 Vdc) (I C = 1.0 mAdc, VCE= 10 Vdc) (IC = 10 mAdc, V CE = 10 Vdc) (IC = 150 mAdc, V CE= 10 Vdc) (IC = 500 mAdc, VCE= 10 Vdc) Collector-Emitter Saturation Voltage (3) (IC = 150 mAdc, I B = 15mAdc) (IC = 500 mAdc, IB = 50mAdc) Base-Emitter Saturation Voltage (3) (IC = 150 mAdc, I B= 15mAdc) (I C= 500 mAdc, I B= 50mAdc) VCE(sat) hFE 35 50 75 100 40 - - 0.3 1 1.2 2 Vdc VBE(sat) - - Vdc SMALL-SIGNAL CHARACTERISTICS Current-Gain-Bandwidth Product (1) (IC = 20 mAdc, VCE=20 Vdc, f=100 MHz) Output Capacitance ( VCB= 10 Vdc, I E =0, f=1.0 MHz) fT Cob 300 - MHz pF - 8 ELECTRICAL CHARACTERISTICS ( Ta=25 C unless otherwise noted) (Countinued) Characteristics Symbol Min Max Unit SWITCHING CHARACTERISTICS Delay Time Rise Time Storage Time Fall Time (VCC = 30 Vdc, I C= 150 mAdc, IB1= 15 mAdc) td tr ts tf - 10 25 ns 225 60 (VCC = 30 Vdc, IC = 150 mAdc, IB1=IB2= 15 mAdc) WEITRON http://www.weitron.com.tw MMBT2222AT 250 DC CURRENT GAIN : h FE 1000 (see Note 1) Pd ,POWER DISSIPATION(mW) 200 Ta =125 C 100 Ta =-25 C Ta =25 C 150 100 10 50 VCE =1.0V 0 0 100 Ta ,AMBIENT TEMPERATURE( C) 200 1 0.1 1 10 100 1000 IC ,COLLECTOR CURRENT(mA) FIG.1 Power Derating Curve 30 20 Cibo CAPACITANCE( p F) VCE ,COLLECTOR-EMITTER VOLTAGE (VOLTS) FIG.2 Typical DC Current Gain vs Collector Current 2.0 1.8 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0 0.001 1C =30mA 1C =1mA 1C =10mA 1C =100mA 1C =300mA 10 5.0 Cobo 1.0 0.1 1.0 10 50 0.01 0.1 1 10 100 REVERSE VOLTS(V) IB ,BASE CURRENT(mA) FIG.3 Typical Capacitance VBE(ON) ,BASE EMITTER VOLTAGE (VOLTS) FIG.4 Typical Collector Saturation Region 0.5 IC /IB =10 VCE(sat),COLLECTOR TO EMITTER SATURATION VOLTAGE(VOLTS) 1.0 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 1 10 100 VCE =5V Ta =50 C Ta =50 C 0.4 Ta =25 C 0.3 Ta =150 C 0.2 0.1 Ta =-50 C 0 1 10 100 IC ,COLLECTOR CURRENT(mA) 1000 Ta =150 C IC ,COLLECTOR CURRENT(mA) FIG.5 Collector Emitter Saturation Voltage vs. Collector Current FIG.6 Base Emitter Voltage vs. Collector Current WEITRON http://www.weitron.com.tw MMBT2222AT 1000 VCE =5V f T ,GAIN BAND WIDTH PRODUCT(MHz) 100 10 1 1 10 Ia ,COLLECTOR CURRENT(mA) 100 FIG.7 Gain Bandwidth Product vs. Collector Current WEITRON http://www.weitron.com.tw MMBT2222AT SOT-523 Outline Dimensions (SC-75) Unit:mm A SC-75 B T OP V IE W C D E G H K J L M Dim A B C D E G H J K L M Min 0. 30 0. 70 1. 45 0. 15 0. 80 1. 40 0. 00 0. 70 0. 37 0. 10 Max 0.50 0.90 1.75 0.50 0.40 1.00 1.80 0.10 1.00 0.48 0.25 WEITRON http://www.weitron.com.tw