2N3904

2N3904 2N3904 NPN Version 2010-02-09 Power dissipation Verlustleistung C BE Si-Epitaxial-Planar Switching Transistors Si-Epitaxial-Planar Schalttransistoren NPN 625 mW TO-92 (10D3) 0.18 g 16 Plastic case Kunststoffgehäuse 18 Weight approx. – Gewicht ca. Plastic material has UL classification 94V-0 Gehäusematerial UL94V-0 klassifiziert Standard packaging taped in ammo pack Standard Lieferform gegurtet in Ammo-Pack 2 x 2.54 Dimensions - Maße [mm] Maximum ratings (TA = 25°C) Collector-Emitter-volt. – Kollektor-Emitter-Spannung Collector-Base-voltage – Kollektor-Basis-Spannung Emitter-Base-voltage – Emitter-Basis-Spannung Power dissipation – Verlustleistung Collector current – Kollektorstrom (dc) Junction temperature – Sperrschichttemperatur Storage temperature – Lagerungstemperatur B open E open C open VCEO VCBO VEBO Ptot IC Tj TS 9 Grenzwerte (TA = 25°C) 2N3904 40 V 60 V 6V 625 mW 1) 200 mA -55...+150°C -55…+150°C Characteristics (Tj = 25°C) Min. DC current gain – Kollektor-Basis-Stromverhältnis 2) IC IC IC IC IC = = = = = 0.1 mA, 1 mA, 10 mA, 50 mA, 100 mA, VCE VCE VCE VCE VCE = = = = = 1 1 1 1 1 V V V V V hFE hFE hFE hFE hFE hfe hie hoe hre 4070 100 60 30 Kennwerte (Tj = 25°C) Typ. – – – – – – – – -4 Max. – – 300 – – 400 10 kΩ 40 µS 8*10-4 h-Parameters at/bei VCE = 10 V, - IC = 1 mA, f = 1 kHz Small signal current gain – Kleinsignal-Stromverstärkung Input impedance – Eingangs-Impedanz Output admittance – Ausgangs-Leitwert Reverse voltage transfer ratio – Spannungsrückwirkung 100 1 kΩ 1 µS 0.5*10 – 1 2 Mounted on P.C. board with 3 mm2 copper pad at each terminal Montage auf Leiterplatte mit 3 mm2 Kupferbelag (Lötpad) an jedem Anschluss Tested with pulses tp = 300 µs, duty cycle ≤ 2% – Gemessen mit Impulsen tp = 300 µs, Schaltverhältnis ≤ 2% http://www.diotec.com/ © Diotec Semiconductor AG 1 2N3904 Characteristics (Tj = 25°C) Min. Collector-Emitter saturation voltage – Kollektor-Sättigungsspannung 2) IC = 10 mA, IB = 1 mA IC = 50 mA, IB = 5 mA Base-Emitter saturation voltage – Basis-Sättigungsspannung 2) IC = 10 mA, IB = 1 mA IC = 50 mA, IB = 5 mA Collector-Base cutoff current – Kollektor-Basis-Reststrom VCE = 30 V, VEB = 3 V Emitter-Base cutoff current – Emitter-Basis-Reststrom - VCE = 30 V, - VEB = 3 V Gain-Bandwidth Product – Transitfrequenz IC = 10 mA, VCE = 20 V, f = 100 MHz Collector-Base Capacitance – Kollektor-Basis-Kapazität VCB = 5 V, IE = ie = 0, f = 1 MHz Emitter-Base Capacitance – Emitter-Basis-Kapazität VEB = 0.5 V, IC = ic = 0, f = 1 MHz Noise figure – Rauschzahl VCE = 5 V, IC = 1 µA, RG = 1 kΩ, f = 1 kHz Switching times – Schaltzeiten (between 10% and 90% levels) delay time rise time storage time fall time VCC = 3 V, VBE = 0.5 V IC = 10 mA, IB1 = 1mA VCC = 3 V, IC = 10 mA, IB1 = IB2 = 1 mA td tr ts tf RthA – – – – – – – – < 200 K/W 1) 2N3906 35 ns 35 ns 200 ns 50 ns F – – 5 dB CEBO – – 8 pf CCBO – – 4 pF fT 300 MHz – – IEBV – –50 nA ICBX – – 50 nA VBEsat VBEsat 0.65 V – – – 0.65 V 0.95 V VCEsat VCEsat – – – – 0.2 V 0.3 V Kennwerte (Tj = 25°C) Typ. Max. Thermal resistance junction to ambient air Wärmewiderstand Sperrschicht – umgebende Luft Recommended complementary PNP transistors Empfohlene komplementäre PNP-Transistoren 2 1 Tested with pulses tp = 300 µs, duty cycle ≤ 2% – Gemessen mit Impulsen tp = 300 µs, Schaltverhältnis ≤ 2% Mounted on P.C. board with 3 mm2 copper pad at each terminal Montage auf Leiterplatte mit 3 mm2 Kupferbelag (Lötpad) an jedem Anschluss http://www.diotec.com/ © Diotec Semiconductor AG 2