AH103-PCB900

AH103 Product Features • • • • • • • 60 – 2700 MHz +27 dBm P1dB +46 dBm Output IP3 28.5 dB Gain @ 900 MHz Excellent ACPR MTTF > 100 Years SOIC-8 Pkg w/ heat slug The Communications Edge TM Product Information High Gain, High Linearity ½ Watt Amplifier Product Description The AH103 is a high gain, high linearity ½-Watt amplifier. This device is comprised of two individual MMIC amplifiers internally and can be used with an external interstage match for any of the mobile infrastructure frequency bands. The dual-stage amplifier achieves up to +46 dBm IP3 performance with 28.5 dB gain. The device conforms to WJ Communications’ long history of producing high reliability and quality components. The AH103 has an associated MTTF of a minimum of 100 years at a mounting temperature of 85°C. All devices are 100% RF & DC tested. The product is targeted for use as driver amplifiers for wireless infrastructure where high performance and high linearity are required. Functional Diagram 1 AMP 2 2 AMP 1 7 8 3 6 4 5 Applications • Mobile Infrastructure • W-LAN / ISM / RFID • MDS / MMDS Infrastructure Pin No. 1 2 3, 5, 8, Ground Backside copper RF in (Amp1 in) 4 RF out (Amp2 out) 6 Bias 2 7 Function Amp2 in Amp1 out / Bias 1 Specifications Parameter Frequency Range (2) Gain Input Return Loss Output Return Loss Output P1dB Output IP3 (3) IS-95 Channel Power (4) @ -45 dBc ACPR Typical Performance Units MHz dB dB dB dBm dBm dBm dB V V mA mA °C / W °C Min 60 26.5 Typ 800 28.5 20 11 +27 +46 +21 2.9 +4.5 +9 75 200 Max 2700 Parameter Frequency S21 S11 S22 Output P1dB Output IP3 Channel Power @ -45 dBc ACPR / ACLR Units MHz dB dB dB dBm dBm dBm dB 900 28.5 -15 -11 +27 +46 +21 2.9 Typical 1900 26 -12 -11 +26.5 +45 +20 2140 25 -11 -14 +26.5 +45 +17.2 3.6 2400 24.7 -12 -17 +26 +43.3 +26 +43 Noise Figure Supply Voltage (Amp1) Supply Voltage (Amp2) Operating Current (Amp1) Operating Current (Amp2) Thermal Resistance (5) Junction Temperature (6) Noise Figure Supply Bias 1 Supply Bias 2 100 230 20.6 160 3.7 3.5 +4.5 V @ 75 mA +9 V @ 200 mA 55 170 7. Typical parameters reflect performance in an application circuit. 8. An IS-95 signal is used for 915 / 1960 MHz. A 3GPP W-CDMA signal is used for 2140 MHz. Test conditions unless otherwise noted. 1. T = 25ºC, Vdd1 = +4.5 V, Vdd2 = +9 V, Frequency = 800 MHz in a tuned application circuit. 2. The frequency of operation & bandwidth is determined by the external interstage match. 3. 3OIP measured with two tones at an output power of +10 dBm/tone separated by 10 MHz. The suppression on the largest IM3 product is used to calculate the 3OIP using a 2:1 rule. 4. IS-95, 9 Channels Forward, Pk/Avg Ratio = 11.5 dB at a .001% probability ±750 kHz offset, 30 kHz BW, Channel BW = 1.23 MHz, frequency = 880 MHz. 5. The worst-case junction temperature for a given ground tab temperature can be calculated by multiplying the thermal resistance with the total package power dissipation and adding it to the tab temperature. ie. At 85°C case temperature for a typical device, the worst-case junction temperature would be = 85°C + (9 V * 0.2 A + 4.5 V * 0.075 A) = 129°C. 6. The junction temperature ensures a minimum MTTF rating of 1 million hours of usage. Absolute Maximum Rating Parameter Operating Case Temperature Storage Temperature DC Voltage (pin 2) DC Voltage (pin 6, 7) RF Input Power (continuous) Junction Temperature Ordering Information Part No. AH103 AH103-PCB900 AH103-PCB1750 AH103-PCB1900 AH103-PCB2140 Rating -40 to +85 °C -55 to +125 °C +6 V +11 V 4 dB above Input P1dB +220°C Description High Gain ½ Watt Amplifier (available in tape and reel) 0.7 – 1.0 GHz Evaluation Circuit 1.7 – 1.8 GHz Evaluation Circuit 1.8 – 2.0 GHz Evaluation Circuit 2.1 – 2.2 GHz Evaluation Circuit Specifications and information are subject to change without notice Operation of this device above any of these parameters may cause permanent damage. WJ Communications, Inc • Phone 1-800-WJ1-4401 • FAX: 408-577-6621 • e-mail: sales@wj.com • W eb site: www.wj.com November 2003 AH103 The Communications Edge TM Product Information Bill of Materials All Application Circuits Ref. Desig. R1 L2, L3 C6, C10, C12 U1 U2 Component 6.8 Ω chip resistor 18 nH chip inductor .018 µF chip capacitor WJ AH103 Amplifier +5V Regulator, National Semiconductor NJM78L05 High Gain, High Linearity ½ Watt Amplifier Application Circuit 5. All components are of size 0603. 6. Other components not shown above are specific for the frequency band of interest. AH103-PCB900 700 – 1000 MHz App. Circuit Ref. Desig. L1 L4 C1 C5, C11 C7 C9 C2, C3, C4, C8 Component 10 nH chip inductor 5.6 nH chip inductor 0 Ω chip resistor 5.6 pF chip capacitor 10 pF chip capacitor 1.5 pF chip capacitor DNP Notes: 1. DNP = Do not place this component. 2. Distance “D1” measured from U1, pin 4 to edge of Cx (where x = 2, 3, or 4). a. D1 = 0.620” to C2 (for use with AH103-PCB1750) The 2.0 pF input tuning capacitor is placed .045” to the left of “C2” shown on the silk screen. The shunt capacitor is placed directly on the right and adjacent to the input blocking capacitor C1. b. D1 = 0.450” to C3 (for use with AH103-PCB1900) c. D1 = 0.310” to C4 (for use with AH103-PCB2140) 3. A voltage regulator is used in this circuit (U2) to drop the +9 V to a +5 V usable supply for the first internal amplifier. It is permissible to remove the regulator and operate the 1st amplifier stage directly off of +5 V supply onto Test Point 1 (TP1). The use of a +5 V supply on the 1st amplifier stage requires a dropping resistor of 6.8 Ω. 4. A +4.5 V supply can also be used to bypass the 6.8 Ω and can be applied to Test Point 2 (TP2). AH103-PCB1750 1700 – 1800 MHz App. Circuit Ref. Desig. Component C1, C11 47 pF chip capacitor C2 2.0 pF chip capacitor C5 0 Ω chip resistor C8 10 pF chip capacitor C3, C4, C7 DNP C9, L1, L4 See note (2a) for the proper placement of C2. Evaluation Board PCB Layout AH103-PCB1900 1800 – 2000 MHz App. Circuit Ref. Desig. C1, C11 C3 C5 C8 C2, C4, C7 C9, L1, L4 Component 47 pF chip capacitor 1.5 pF chip capacitor 0 Ω chip resistor 10 pF chip capacitor DNP AH103-PCB2140 2110 – 2140 MHz App. Circuit Ref. Desig. C1, C11 C4 C5 C8 C2, C3. C7 C9, L1, L4 Component 47 pF chip capacitor 1.2 pF chip capacitor 0 Ω chip resistor 10 pF chip capacitor DNP Circuit Board Material: .014” FR-4, 4 layers, .062” total thickness 2.4 – 2.7 GHz Reference Circuit Ref. Desig. L1 C1 C5 C8 C11 C2, C3. C4 C7, C9, L4 WJ Communications, Inc • Phone 1-800-WJ1-4401 • FAX: 408-577-6621 • e-mail: sales@wj.com • W eb site: www.wj.com Component 1 pF chip capacitor 0 Ω chip resistor 22 pF chip capacitor 10 pF chip capacitor 47 pF chip capacitor DNP Specifications and information are subject to change without notice November 2003 AH103 The Communications Edge TM Product Information High Gain, High Linearity ½ Watt Amplifier Application Circuit: 700 – 1000 MHz (AH103-PCB900) Typical RF Performance Frequency S21 – Gain S11 – Input Return Loss S22 – Output Return Loss Output P1dB Output IP3 (+10 dBm / tone, 1 MHz spacing) Application Circuit: 1.8 – 2.0 GHz (AH103-PCB1900) Typical RF Performance Frequency S21 – Gain S11 – Input Return Loss S22 – Output Return Loss Output P1dB Output IP3 (+10 dBm / tone, 1 MHz spacing) 880 MHz 28.5 dB -15 dB -11 dB +27 dBm +45 dBm +21 dBm 2.9 dB +4.5 V @ 75 mA +9 V @ 200 mA 1960 MHz 26 dB -12 dB -11 dB +26.5 dBm +45 dBm +20 dBm 3.7 dB +4.5 V @ 75 mA +9 V @ 200 mA IS-95 Channel Power @ -45 dBc ACPR IS-95 Channel Power @ -45 dBc ACPR Noise Figure Supply Bias (Amp 1) Supply Bias (Amp 2) Noise Figure Supply Bias (Amp 1) Supply Bias (Amp 2) S-Parameters 30 25 20 15 30 25 20 S-Parameters Magnitude (dB) 10 5 0 -5 -10 -15 -20 -25 -30 0.6 0.7 0.8 0.9 1 Frequency (GHz) 1.1 1.2 DB(|S[1,1]|) DB(|S[2,1]|) DB(|S[2,2]|) Magnitude (dB) 15 10 5 0 -5 -10 -15 -20 1.6 1.7 1.8 1.9 2 Frequency (GHz) 2.1 2.2 DB(|S[1,1]|) DB(|S[2,1]|) DB(|S[2,2]|) -30 -35 -40 -45 -50 -55 -60 -65 -70 -75 -80 10 880 MHz ACPR vs Channel Power Single Carrier and 4-Carrier IS-95 Single Carrier 4 Carrier 12 14 16 18 20 -30 -35 -40 -45 -50 -55 -60 -65 -70 -75 -80 10 1960 MHz ACPR vs Channel Power Single Carrier and 4-Carrier IS-95 ACPR (dBc) ACPR (dBc) Single Carrier 4 Carrier 12 14 16 18 20 Channel Output Power (dBm) Single Carrier Signal: IS-95, 9 Channels Forward, Pk/Avg Ratio = 11.5 dB at a .001% probability ±750 kHz offset, 30 kHz bandwidth, Channel BW = 1.23 MHz Four-Carrier Signal: IS-95, 9 Channels Forward, Pk/Avg Ratio = 10.2 dB at a .001% probability ±2.60 MHz offset, 30 kHz bandwidth, Channel BW = 4.92 MHz Channel Output Power (dBm) Single Carrier Signal: IS-95, 9 Channels Forward, Pk/Avg Ratio = 11.5 dB at a .001% probability ±885 kHz offset, 30 kHz bandwidth, Channel BW = 1.23 MHz Four-Carrier Signal: IS-95, 9 Channels Forward, Pk/Avg Ratio = 10.2 dB at a .001% probability ±2.76 MHz offset, 30 kHz bandwidth, Channel BW = 4.98 MHz Specifications and information are subject to change without notice WJ Communications, Inc • Phone 1-800-WJ1-4401 • FAX: 408-577-6621 • e-mail: sales@wj.com • W eb site: www.wj.com November 2003 AH103 The Communications Edge TM Product Information High Gain, High Linearity ½ Watt Amplifier Application Circuit: 2110 – 2170 MHz (AH103-PCB2140) Typical RF Performance Frequency S21 – Gain S11 – Input Return Loss S22 – Output Return Loss Output P1dB Output IP3 (+10 dBm / tone, 1 MHz spacing) Reference Design: 2.4 – 2.7 GHz Typical RF Performance Frequency S21 – Gain S11 – Input Return Loss S22 – Output Return Loss Output P1dB Output IP3 (+10 dBm / tone, 1 MHz spacing) 2140 MHz 25 dB -11 dB -14 dB +26.5 dBm +45 dBm 3.5 dB +4.5 V @ 75 mA +9 V @ 200 mA MHz dB dB dB dBm dBm dB 2400 24.7 -12 -17 +26 +43.3 2700 23.5 -15 -16 +25.2 +41.9 Noise Figure Supply Bias (Amp 1) Supply Bias (Amp 2) Noise Figure Supply Bias (Amp 1) Supply Bias (Amp 2) 3.6 3.6 4.5 V @ 75 mA 9 V @ 200 mA S-Parameters 30 25 20 30 25 20 2.4009 GHz 24.72 dB S-Parameters 2.7008 GHz 23.53 dB Magnitude (dB) Magnitude (dB) 15 10 5 0 -5 -10 -15 -20 1.9 2 2.1 2.2 Frequency (GHz) 2.3 2.4 DB(|S[1,1]|) DB(|S[2,1]|) DB (|S[2,2]|) 15 10 5 0 -5 -10 -15 -20 2.2 2.3 2.4 2.5 2.6 Frequency (GHz) 2.7 2.8 2.9 DB(|S[1,1]|) DB(|S[2,1]|) DB(|S[2,2]|) ACPR vs. Channel Power -40 -45 -50 -55 -60 12 13 14 15 16 17 18 Output Channel Power (dBm) 3GPP W-CDMA, Test Model 1 +64 DPCH, ±5 MHz offset freq = 2140 MHz ACPR (dBc) Specifications and information are subject to change without notice WJ Communications, Inc • Phone 1-800-WJ1-4401 • FAX: 408-577-6621 • e-mail: sales@wj.com • W eb site: www.wj.com November 2003 AH103 The Communications Edge TM Product Information High Gain, High Linearity ½ Watt Amplifier Outline Drawing Product Marking The component will be marked with an “AH103” designator followed by a four- or five-digit alphanumeric lot code on the top surface of the package. Tape and reel specifications for this part is located on the website in the “Application Notes” section. ESD / MSL Information ESD Classification: Value: Test: Standard: ESD Classification: Value: Test: Standard: MSL Rating: Standard: Class 1B Passes !500 V to